Wu Xiao-Ming

Status of GaN-based green light-emitting diodes*

GaN-based blue light emitting diodes (LEDs) have undergone great development in recent years, but the improvement of green LEDs is still in progress. Currently, the external quantum efficiency (EQE) of GaN-based green LEDs is typically 30%, which is much lower than that of top-level blue LEDs. The current challenge with regard to GaN-based green LEDs is to grow a high quality InGaN quantum well (QW) with low strain. Many techniques of improving efficiency are discussed, such as inserting AlGaN between the QW and the barrier, employing prestrained layers beneath the QW and growing semipolar QW. The recent progress of GaN-based green LEDs on Si substrate is also reported: high efficiency, high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm2, and the relevant techniques are detailed.

Highly Efficient Simplified Organic Light-Emitting Diodes Utilizing F4-TCNQ as an Anode Buffer Layer

We demonstrate that the electroluminescent performances of organic light-emitting diodes (OLEDs) are significantly improved by evaporating a thin F4-TCNQ film as an anode buffer layer on the ITO anode. The optimum Alq3-based OLEDs with F4-TCNQ buffer layer exhibit a lower turn-on voltage of 2.6 V, a higher brightness of 39820 cd/m2 at 13 V, and a higher current efficiency of 5.96 cd/A at 6 V, which are obviously superior to those of the conventional device (turn-on voltage of 4.1 V, brightness of 18230 cd/m2 at 13 V, and maximum current efficiency of 2.74 cd/A at 10 V). Furthermore, the buffered devices with F4-TCNQ as the buffer layer could not only increase the efficiency but also simplify the fabrication process compared with the p-doped devices in which F4-TCNQ is doped into β-NPB as p-HTL (3.11 cd/A at 7V). The reason why the current efficiency of the p-doped devices is lower than that of the buffered devices is analyzed based on the concept of doping, the measurement of absorption and photoluminescence spectra of the organic materials, and the current density-voltage characteristics of the corresponding hole-only devices.

Tandem white organic light-emitting diodes adopting a C60:rubrene charge generation layer

Organic bulk heterojunction fullerence (C60) doped 5, 6, 11, 12-tetraphenylnaphthacene (rubrene) as the high quality charge generation layer (CGL) with high transparency and superior charge generating capability for tandem organic light emitting diodes (OLEDs) is developed. This CGL shows excellent optical transparency about 90%, which can reduce the optical interference effect formed in tandem OLEDs. There is a stable white light emission including 468 nm and 500 nm peaks from the blue emitting layer and 620 nm peak from the red emitting layer in tandem white OLEDs. A high efficiency of about 17.4 cd/A and CIE coordinates of (0.40, 0.35) at 100 cd/m2 and (0.36, 0.34) at 1000 cd/m2 have been demonstrated by employing the developed CGL, respectively.

Improvement of electron injection of organic light-emitting devices by inserting a thin aluminum layer into cesium carbonate injection layer*

We investigate the electron injection effect of inserting a thin aluminum(Al) layer into cesium carbonate(Cs2CO3)injection layer. Two groups of organic light-emitting devices(OLEDs) are fabricated. For the first group of devices based on Alq3, we insert a thin Al layer of different thickness into Cs2CO3 injection layer, and the device’s maximum current efficiency of 6.5 cd/A is obtained when the thickness of the thin Al layer is 0.4 nm. However, when the thickness of Al layer is 0.8 nm, the capacity of electron injection is the strongest. To validate the universality of this approach, then we fabricate another group of devices based on another blue emitting material. The maximum current efficiency of the device without and with a thin Al layer is 4.51 cd/A and 4.84 cd/A, respectively. Inserting a thin Al layer of an appropriate thickness into Cs2CO3 layer can result in the reduction of electron injection barrier, enhancement of the electron injection, and improvement of the performance of OLEDs. This can be attributed to the mechanism that thermally evaporated Cs2CO3 decomposes into cesium oxides, the thin Al layer reacts with cesium oxides to form Al–O–Cs complex, and the amount of the Al–O–Cs complex can be controlled by adjusting the thickness of the thin Al layer.

Efficiency of a blue organic light-emitting diode enhanced by inserting charge control layers into the emission region

We demonstrate high current efficiency of a blue fluorescent organic light-emitting diode (OLED) by using the charge control layers (CCLs) based on Alq3. The CCLs that are inserted into the emitting layers (EMLs) could impede the hole injection and facilitate the electron transport, which can improve the carrier balance and further expand the exciton generation region. The maximal current efficiency of the optimal device is 5.89 cd/A at 1.81 mA/cm2, which is about 2.19 times higher than that of the control device (CD) without the CCL, and the maximal luminance is 19.660 cd/m2 at 12 V. The device shows a good color stability though the green light emitting material Alq3 is introduced as the CCL in the EML, but it has a poor lifetime due to the formation of cationic Alq3 species.

Adaptive lag synchronization of uncertain dynamical systems with time delays via simple transmission lag feedback

In this paper we present an adaptive scheme to achieve lag synchronization for uncertain dynamical systems with time delays and unknown parameters. In contrast to the nonlinear feedback scheme reported in the previous literature, the proposed controller is a linear one which only involves simple feedback information from the drive system with signal propagation lags. Besides, the unknown parameters can also be identified via the proposed updating laws in spite of the existence of model delays and transmission lags, as long as the linear independence condition between the related function elements is satisfied. Two examples, i.e., the Mackey—Glass model with single delay and the Lorenz system with multiple delays, are employed to show the effectiveness of this approach. Some robustness issues are also discussed, which shows that the proposed scheme is quite robust in switching and noisy environment.

Improved performance of organic light-emitting diodes with dual electron transporting layers

In this study the performance of organic light-emitting diodes (OLEDs) are enhanced significantly, which is based on dual electron transporting layers (Bphen/CuPc). By adjusting the thicknesses of Bphen and CuPc, the maximal luminescence, the maximal current efficiency, and the maximal power efficiency of the device reach 17570 cd/m2 at 11 V, and 5.39 cd/A and 3.39 lm/W at 3.37 mA/cm2 respectively, which are enhanced approximately by 33.4%, 39.3%, and 68.9%, respectively, compared with those of the device using Bphen only for an electron transporting layer. These results may provide some valuable references for improving the electron injection and the transportation of OLED.

Improved Performance of Phthalocyanine Derivative Field-Effect Transistors by Inserting a Para-Quarterphenyl as the Inducing Layer

We investigate the phthalocyanine derivative organic field-effect transistors (OFETs) using a novel para - quaterphenyl (p-4p) as the inducing layer. Compared to the devices without the p-4p inducing layer, the performances of p-type (copper phthalocyanine) and n-type (fluorinated copper phthalocyanine) OFETs with optimized thickness of p-4p thin films are greatly enhanced. Both the field-effect mobility and the on/off ratio of the two-type devices are improved by one order of magnitude compared to those of the control devices. This remarkable improvement is attributed to the introduction of p-4p, which can form a highly oriented and continuous phthalocyanine derivative film with the molecular π–π stack direction parallel to the substrate.

Improving the Efficiency of Blue Organic Light-Emitting Diodes by Employing Cs-Derivatives as the n -Dopant

The efficiency of organic light-emitting diodes (OLEDs) was markedly improved using the novel electron transporting material 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (NBPhen) doped with Cs-derivatives including cesium carbonate (Cs2CO3) and cesium acetate (CH3COOCs) as the n-type dopant. The operating voltage of devices containing these materials as an n-type electron transporting layer (n-ETL) was significantly reduced. Optimized devices with Cs2CO3-doped or CH3COOCs- doped n-ETL (ITO/β-NPB/CBP:5%(w) N-BDAVBi/NBPhen/NBPhen:Cs2CO3 (or CH3COOCs)/Al) exhibited

High Performance Polymer Field-Effect Transistors Based on Thermally Crosslinked Poly(3-hexylthiophene)

The performance of polymer field-effect transistors is improved by thermal crosslinking ofpoly(3-hexylthiophene), using ditert butyl peroxide as the crosslinker. The device performance depends on the crosslinker concentration significantly. We obtain an optimal on/off ratio of 105 and the saturate field-effect mobility of 0.34cm2V−1s−1, by using a suitable ratios of ditert butyl peroxide, 0.5 wt% ofpoly(3-hexylthiophene). The microstructure images show that the crosslinked poly(3-hexylthiophene) active layers simultaneously possess appropriate crystallinity and smooth morphology. Moreover, crosslinking of poly(3-hexylthiophene) prevents the transistors from large threshold voltage shifts under ambient bias-stressing, showing an advantage in encouraging device environmental and operating stability.