X. C. Xie

Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3

We report that Bi₂Se₃ thin films can be epitaxially grown on SrTiO₃ substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.

Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry

We report direct imaging of standing waves of the nontrivial surface states of topological insulator Bi2Te3 using a scanning tunneling microscope. The interference fringes are caused by the scattering of the topological states off Ag impurities and step edges on the Bi2Te3(111) surface. By studying the voltage-dependent standing wave patterns, we determine the energy dispersion E(k), which confirms the Dirac cone structure of the topological states. We further show that, very different from the conventional surface states, backscattering of the topological states by nonmagnetic impurities is completely suppressed. The absence of backscattering is a spectacular manifestation of the time-reversal symmetry, which offers a direct proof of the topological nature of the surface states.

Landau quantization of topological surface states in Bi2Se3.

1 Department of Physics, Tsinghua University, Beijing 100084, China 2 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 3 Microsoft Research, Station Q, University of California, Santa Barbara, CA 93106, USA 4 Department of Physics, Stanford University, Stanford CA 94305, USA 5 Physikalisches Institut, Universität Würzburg, D-97074 Würzburg, Germany * These authors contributed equally to this work. ¶ To whom correspondence should addressed. Email: xc@mail.tsinghua.edu.cn, xcma@aphy.iphy.ac.cn

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit

High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.

Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H–SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2×1011/cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.Atomically flat thin films of topological insulator Bi{sub 2}Se{sub 3} have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi{sub 2}Se{sub 3} films. The as-grown films without doping exhibit a low defect density of 1.0{+-}0.2x10{sup 11}/cm{sup 2}, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

Bias-controllable intrinsic spin polarization in a quantum dot: Proposed scheme based on spin-orbit interaction

We propose a novel scheme to efficiently polarize and manipulate the electron spin in a quantum dot. This scheme is based on the spin-orbit interaction and it possesses following advantages: (1) The direction and the strength of the spin polarization is well controllable and manipulatable by simply varying the bias or the gate voltage. (2) The spin polarization is quite large even with a weak spin-orbit interaction. (3) Both electron-electron interaction and multienergy levels do not weaken but strengthen the spin accumulation. (4) The spin-flip time can reach to the order of 10(-11) s. (5) The device is free of a magnetic field or a ferromagnetic material. (6) It can be easily realized with present technology.

Time‐resolved exciton luminescence in GaN grown by metalorganic chemical vapor deposition

We report the results of time‐resolved studies on the exciton radiative decay in single‐crystal GaN films grown by metalorganic chemical vapor deposition. Time‐resolved photoluminescence (PL) measurements were performed on the samples at various temperatures from 10 to 320 K. The well‐resolved near‐band‐edge luminescence features associated with free excitons and bound excitons in the GaN allow us to unambiguously determine their decay times. We found that the nonradiative recombination processes play an important role and dominate the decay of exciton population. The processes depend on the density of defects and impurities in the GaN samples.

Localization and the Kosterlitz-Thouless Transition in Disordered Graphene

We investigate disordered graphene with strong long-range impurities. Contrary to the common belief that delocalization should persist in such a system against any disorder, as the system is expected to be equivalent to a disordered two-dimensional Dirac fermionic system, we find that states near the Dirac points are localized for sufficiently strong disorder (therefore inevitable intervalley scattering) and the transition between the localized and delocalized states is of Kosterlitz-Thouless type. Our results show that the transition originates from bounding and unbounding of local current vortices.

Intrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy : A conductance transition of ZnO nanowire

We report intrinsic current-voltage properties of ZnO nanowire measured by a four-tip scanning tunneling microscopy (F-STM). It is found that after bending the nanowire with the F-STM the conductance is reduced by about five orders of magnitude. The cathodoluminescent spectra indicate that the ZnO nanowires contain a sizable amount of defects in the surface region, responsible for their conduction. It is suggested that the observed huge conductance changes are caused by the shifting of the surface defect states in the ZnO nanowires in response to the applied surface strain.

Spin-dependent transport through an interacting quantum dot

We study the nonequilibrium spin transport through a quantum dot coupled to the magnetic electrodes. A formula for the spin-dependent current is obtained and is applied to discuss the linear conductance and magnetoresistance in the interacting regime. We show that the Kondo resonance and the correlation-induced spin splitting of the dot levels may be systematically controlled by internal magnetization in the electrodes. As a result, when the electrodes are in parallel magnetic configuration, the linear conductance is characterized by two spin-resolved peaks. Furthermore, the presence of the spin-flip process in the dot splits the Kondo resonance into three peaks.