X. Q. Pan

Substitution-induced phase transition and enhanced multiferroic properties of Bi1−xLaxFeO3 ceramics

Single-phase, insulating Bi1−xLaxFeO3 (BLFOx, x=0.05, 0.10, 0.15, 0.20, 0.30, and 0.40) ceramics were prepared. An obvious phase transition from rhombohedral to orthorhombic phase was observed near x=0.30. It is found that the phase transition destructs the spin cycloid of BiFeO3 (BFO), and therefore, releases the locked magnetization and enhances magnetoelectric interaction. As a result, improved multiferroic properties of the BLFO0.30 ceramics with remnant polarization and magnetization (2Pr and 2Mr) of 22.4μC∕cm2 and 0.041emu∕g, respectively, were established.

Ferroelastic switching for nanoscale non-volatile magnetoelectric devices

Multiferroics, where (anti-) ferromagnetic, ferroelectric and ferroelastic order parameters coexist, enable manipulation of magnetic ordering by an electric field through switching of the electric polarization. It has been shown that realization of magnetoelectric coupling in a single-phase multiferroic such as BiFeO(3) requires ferroelastic (71 degrees, 109 degrees) rather than ferroelectric (180 degrees) domain switching. However, the control of such ferroelastic switching in a single-phase system has been a significant challenge as elastic interactions tend to destabilize small switched volumes, resulting in subsequent ferroelastic back-switching at zero electric field, and thus the disappearance of non-volatile information storage. Guided by our phase-field simulations, here we report an approach to stabilize ferroelastic switching by eliminating the stress-induced instability responsible for back-switching using isolated monodomain BiFeO(3) islands. This work demonstrates a critical step to control and use non-volatile magnetoelectric coupling at the nanoscale. Beyond magnetoelectric coupling, it provides a framework for exploring a route to control multiple order parameters coupled to ferroelastic order in other low-symmetry materials.

Optical band gap of BiFeO3 grown by molecular-beam epitaxy

BiFeO3 thin films have been deposited on (001) SrTiO3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with ω rocking curve full width at half maximum values as narrow as 29arcsec (0.008°). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO3 films.

Very high upper critical fields in MgB2 produced by selective tuning of impurity scattering

We report a significant enhancement of the upper critical field Hc2 of different MgB2 samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities ρ ,w e sho wac lear trend of a ni ncrease in Hc2 as ρ increases. One particular high resistivity film had a zero-temperature Hc2(0) well above the Hc2 values of competing non-cuprate superconductors such as Nb3Sn and Nb–Ti. Our high-field transport measurements give record values H ⊥ c2 (0) ≈ 34 T and H || c2 (0) ≈ 49 T for high resistivity films and Hc2(0) ≈ 29 T for untextured bulk polycrystals. The highest Hc2 film also exhibits a significant upward curvature of Hc2(T ) and a temperature dependence of the anisotropy parameter γ( T ) = H || c2 /H ⊥ c2 opposite to that of single crystals: γ( T ) decreases as the temperature decreases, from γ( Tc) ≈ 2t o γ( 0) ≈ 1.5. This remarkable Hc2 enhancement and its anomalous temperature dependence are a consequence of the two-gap superconductivity in MgB2 ,w hich offers special opportunities for further Hc2 increases by tuning of the impurity scattering by selective alloying on Mg and B sites. Our experimental results can be explained by a theory of two-gap superconductivity in the dirty limit. The very high values of Hc2(T ) observed suggest that MgB2 can be made into a versatile, competitive high-field superconductor.

Oxide nano-engineering using MBE

Abstract Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer level; its use for the integration of oxides with similar nanoscale customization appears promising. This paper describes the use of reactive MBE to synthesize layered oxide heterostructures, including new compounds and metastable superlattices, involving monolayer-level integration of the dielectric and ferroelectric oxides SrO, SrTiO 3 , BaTiO 3 , PbTiO 3 , and Bi 4 Ti 3 O 12 . The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the dielectric and ferroelectric properties of materials. Oxide nano-engineering is accomplished by supplying the incident species in the desired layering sequence with submonolayer composition control. Comparisons between the growth of compound semiconductors and oxides by MBE are made.

Synthesis and ferroelectric properties of epitaxial BiFeO3 thin films grown by sputtering

We have grown epitaxial BiFeO3 thin films with smooth surfaces on (001), (101), and (111) SrTiO3 substrates using sputtering. Four-circle x-ray diffraction and cross-sectional transmission electron microscopy show that the BiFeO3 thin films have rhombohedral symmetry although small monoclinic distortions have not been ruled out. Stripe ferroelectric domains oriented perpendicular to the substrate miscut direction and free of impurity phase are observed in BiFeO3 on high miscut (4°) (001) SrTiO3, which attributes to a relatively high value of remanent polarization (∼71μC∕cm2). Films grown on low miscut (0.8°) SrTiO3 have a small amount of impure phase α-Fe2O3 which contributes to lower the polarization values (∼63μC∕cm2). The BiFeO3 films grown on (101) and (111) SrTiO3 exhibited remanent polarizations of 86 and 98μC∕cm2, respectively.

Epitaxial growth of the first five members of the Srn+1TinO3n+1 Ruddlesden–Popper homologous series

The first five members of the Srn+1TinO3n+1 Ruddlesden–Popper homologous series, i.e., Sr2TiO4, Sr3Ti2O7, Sr4Ti3O10, Sr5Ti4O13, and Sr6Ti5O16, have been grown by reactive molecular beam epitaxy. A combination of atomic absorption spectroscopy and reflection high-energy electron diffraction intensity oscillations were used for the strict composition control necessary for the synthesis of these phases. X-ray diffraction and high-resolution transmission electron microscope images confirm that these films are epitaxially oriented and nearly free of intergrowths. Dielectric measurements indicate that the dielectric constant tensor coefficient e33 increases from a minimum of 44±4 in the n=1(Sr2TiO4) film to a maximum of 263±2 in the n=∞(SrTiO3) film.

Evolution of dislocation arrays in epitaxial BaTiO3 thin films grown on (100) SrTiO3

Dislocation arrays and dislocation half-loops in BaTiO3 thin films were characterized using transmission electron microscopy (TEM). BaTiO3 films with thicknesses ranging from 2 to 20 nm were grown on (100) SrTiO3 by reactive molecular beam epitaxy (MBE). The critical thickness for dislocations to occur in this system was found to lie between 2 and 4 nm. The misfit dislocations are mainly 〈100〉 type. The average spacing between the dislocations in the array becomes smaller when the film is thicker, which indicates gradual relaxation of mismatch strain with increasing film thickness.

Weak-link behavior of grain boundaries in superconducting Ba(Fe1−xCox)2As2 bicrystals

We show that despite the low anisotropy, strong vortex pinning, and high irreversibility field Hirr close to the upper critical field Hc2 of Ba(Fe1−xCox)2As2, the critical current density Jgb across [001] tilt grain boundaries (GBs) of thin film Ba(Fe1−xCox)2As2 bicrystals is strongly depressed, similar to high-Tc cuprates. Our results suggest that weak-linked GBs are characteristic of both cuprates and pnictides because of competing orders, low carrier density, and unconventional pairing symmetry.

Size effects in ultrathin epitaxial ferroelectric heterostructures

In this letter we report on the effect of thickness scaling in model PbZr0.2Ti0.8O3(PZT)∕SrRuO3 heterostructures. Although theoretical models for thickness scaling have been widely reported, direct quantitative experimental data for ultrathin perovskite (<10nm) films in the presence of real electrodes have still not been reported. In this letter we show a systematic quantitative experimental study of the thickness dependence of switched polarization in (001) epitaxial PZT films, 4to80nm thick. A preliminary model based on a modified Landau Ginzburg approach suggests that the nature of the electrostatics at the ferroelectric–electrode interface plays a significant role in the scaling of ferroelectric thin films.