Xavier Blase

Stability and Band Gap Constancy of Boron Nitride Nanotubes

Extensive LDA and quasi-particle calculations have been performed on boron nitride (BN) single-wall and multi-wall nanotubes. Strain energies are found to be smaller for BN nanotubes than for carbon nanotubes of the same radius, owing to a buckling effect which stabilizes the BN tubular structure. For tubes larger than 9.5 A in diameter, the lowest conduction band is predicted to be free-electron-like with electronic charge density localized inside the tube. For these tubes, this band is at constant energy above the top of the valence band. Consequently, contrarily to carbon nanotubes, single- and multi-wall BN nanotubes are constant-band-gap materials, independent of their radius and helicity. In addition, we expect them to exhibit remarkable properties under n-type doping.

Identification of electron donor states in N-doped carbon nanotubes

Nitrogen-doped carbon nanotubes have been synthesized using pyrolysis and characterized by scanning tunneling spectroscopy and transmission electron microscopy. The doped nanotubes are all metallic and exhibit strong electron donor states near the Fermi level. Using tight-binding and ab initio calculations, we observe that pyridine-like N structures are responsible for the metallic behavior and the prominent features near the Fermi level. These electron rich structures are the first example of n-type nanotubes, which could pave the way to real molecular heterojunction devices.

Giant osmotic energy conversion measured in a single transmembrane boron nitride nanotube

New models of fluid transport are expected to emerge from the confinement of liquids at the nanoscale, with potential applications in ultrafiltration, desalination and energy conversion. Nevertheless, advancing our fundamental understanding of fluid transport on the smallest scales requires mass and ion dynamics to be ultimately characterized across an individual channel to avoid averaging over many pores. A major challenge for nanofluidics thus lies in building distinct and well-controlled nanochannels, amenable to the systematic exploration of their properties. Here we describe the fabrication and use of a hierarchical nanofluidic device made of a boron nitride nanotube that pierces an ultrathin membrane and connects two fluid reservoirs. Such a transmembrane geometry allows the detailed study of fluidic transport through a single nanotube under diverse forces, including electric fields, pressure drops and chemical gradients. Using this device, we discover very large, osmotically induced electric currents generated by salinity gradients, exceeding by two orders of magnitude their pressure-driven counterpart. We show that this result originates in the anomalously high surface charge carried by the nanotube’s internal surface in water at large pH, which we independently quantify in conductance measurements. The nano-assembly route using nanostructures as building blocks opens the way to studying fluid, ionic and molecule transport on the nanoscale, and may lead to biomimetic functionalities. Our results furthermore suggest that boron nitride nanotubes could be used as membranes for osmotic power harvesting under salinity gradients.

Synthesis of B{sub {ital x}}C{sub {ital y}}N{sub {ital z}} nanotubules

We report the successful synthesis of B{sub {ital x}}C{sub {ital y}}N{sub {ital z}} nanotubes. Arc-discharge methods were used to produce stable nanotubule structures identified by high-resolution transmission-electron microscopy. Local electron-energy-loss spectroscopy of {ital K}-edge absorptions for B, C, and N atoms was used to determine the atomic compositions of individual tubules. Tubes of stoichiometry BC{sub 2}N and BC{sub 3} have been observed, in agreement with theoretical predictions.

Anomalous Doping Effects on Charge Transport in Graphene Nanoribbons

We present first-principles calculations of quantum transport in chemically doped graphene nanoribbons with a width of up to 4 nm. The presence of boron and nitrogen impurities is shown to yield resonant backscattering, whose features are strongly dependent on the symmetry and the width of the ribbon, as well as the position of the dopants. Full suppression of backscattering is obtained on the pi-pi* plateau when the impurity preserves the mirror symmetry of armchair ribbons. Further, an unusual acceptor-donor transition is observed in zigzag ribbons. These unconventional doping effects could be used to design novel types of switching devices.

Theory of composite BxCyNz nanotube heterojunctions

Examines the stability and electronic properties of composite B[sub x]C[sub y]N[sub z] nanotube heterojunctions. Use of ab initio density functional calculations and semi-empirical approaches; Advantage of nanotubes; Independence of junction characteristics from nanotube factors.

First-principles GW calculations for fullerenes, porphyrins, phtalocyanine, and other molecules of interest for organic photovoltaic applications

We evaluate the performances of ab initio GW calculations for the ionization energies and highest occupied molecular orbital-lowest unoccupied molecular orbital gaps of 13 gas phase molecules of interest for organic electronic and photovoltaic applications, including the C60 fullerene, pentacene, free-base porphyrins and phtalocyanine, PTCDA, and standard monomers such as thiophene, fluorene, benzothiazole, or thiadiazole. Standard G0W0 calculations, that is, starting from eigenstates obtained with local or semilocal functionals, significantly improve the ionization energy and band gap as compared to density functional theory Kohn-Sham results, but the calculated quasiparticle values remain too small as a result of overscreening. Starting from Hartree-Fock-like eigenvalues provides much better results and is equivalent to performing self-consistency on the eigenvalues, with a resulting accuracy of 2%‐4% as compared to experiment. Our calculations are based on an efficient Gaussian-basis implementation of GW with explicit treatment of the dynamical screening through contour deformation techniques.

Superconductivity in doped cubic silicon

Although the local resistivity of semiconducting silicon in its standard crystalline form can be changed by many orders of magnitude by doping with elements, superconductivity has so far never been achieved. Hybrid devices combining silicon’s semiconducting properties and superconductivity have therefore remained largely underdeveloped. Here we report that superconductivity can be induced when boron is locally introduced into silicon at concentrations above its equilibrium solubility. For sufficiently high boron doping (typically 100 p.p.m.) silicon becomes metallic. We find that at a higher boron concentration of several per cent, achieved by gas immersion laser doping, silicon becomes superconducting. Electrical resistivity and magnetic susceptibility measurements show that boron-doped silicon (Si:B) made in this way is a superconductor below a transition temperature Tc ≈ 0.35 K, with a critical field of about 0.4 T. Ab initio calculations, corroborated by Raman measurements, strongly suggest that doping is substitutional. The calculated electron–phonon coupling strength is found to be consistent with a conventional phonon-mediated coupling mechanism. Our findings will facilitate the fabrication of new silicon-based superconducting nanostructures and mesoscopic devices with high-quality interfaces.

Role of the Dopant in the Superconductivity of Diamond

We present an ab initio study of the recently discovered superconductivity of boron doped diamond within the framework of a phonon-mediated pairing mechanism. The role of the dopant, in substitutional position, is unconventional in that half of the coupling parameter lambda originates in strongly localized defect-related vibrational modes, yielding a very peaked Eliashberg alpha2F(omega) function. The electron-phonon coupling potential is found to be extremely large, and T(C) is limited by the low value of the density of states at the Fermi level. The effect of boron isotope substitution is explored.

Boron-nitride and boron-carbonitride nanotubes: synthesis, characterization and theory

We present in this review a joint experimental and theoretical overview of the synthesis techniques and properties of boron-nitride (BN) and boron-carbonitride (BCN) nanotubes. While their tubular structure is similar to that of their carbon analogues, we show that their electronic properties are significantly different. BN tubes are wide band gap insulators while BCN systems can be semiconductors with a band gap in the visible range.