Xia Changtai

Demonstration of GaN/InGaN Light Emitting Diodes on (100) β-Ga2O3 Substrates by Metalorganic Chemical Vapour Deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.

混晶Beta-(Al, Ga) 2 O 3 的禁带调节

通过光学浮区法生长了不同浓度的Beta-(Al, Ga) 2 O 3 混晶。当Al 3+ 掺杂浓度达到0.26的时候, 晶体生长出现开裂现象。进行X射线衍射分析, 结果表明所得Beta-(Al, Ga) 2 O 3 混晶保持了Beta-Ga 2 O 3 的晶体结构, 晶体没有出现其他杂质相, 并且随着Al 3+ 浓度的增加, 晶格常数a、b、c减小, β角增大; 核磁共振光谱显示Al的确进入了Ga的格位并且取代了Ga的四配位和六配位格位, 两者的比例约为1: 3。通过测试Beta-(Al, Ga) 2 O 3 混晶的透过光谱, 得出Beta-(Al, Ga) 2 O 3 混晶的禁带调节范围为4.72~5.32 eV, 扩大了Beta-Ga 2 O 3 晶体在更短波段的光电子探测器方面的应用。通过光学浮区法生长了不同浓度的Beta-(Al, Ga) 2 O 3 混晶。当Al 3+ 掺杂浓度达到0.26的时候, 晶体生长出现开裂现象。进行X射线衍射分析, 结果表明所得Beta-(Al, Ga) 2 O 3 混晶保持了Beta-Ga 2 O 3 的晶体结构, 晶体没有出现其他杂质相, 并且随着Al 3+ 浓度的增加, 晶格常数a、b、c减小, β角增大; 核磁共振光谱显示Al的确进入了Ga的格位并且取代了Ga的四配位和六配位格位, 两者的比例约为1: 3。通过测试Beta-(Al, Ga) 2 O 3 混晶的透过光谱, 得出Beta-(Al, Ga) 2 O 3 混晶的禁带调节范围为4.72~5.32 eV, 扩大了Beta-Ga 2 O 3 晶体在更短波段的光电子探测器方面的应用。