Xianfan Xu

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31-0.36 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm(2)/V·s, and an on/off ratio of up to 10(4). We demonstrate the possibility of phosphorene integration by constructing a 2D CMOS inverter consisting of phosphorene PMOS and MoS2 NMOS transistors.Preceding the current interest in layered materials for electronic applications, research in the 1960s found that black phosphorus combines high carrier mobility with a fundamental band gap. We introduce its counterpart, dubbed few-layer phosphorene, as a new 2D p-type material. Same as graphene and MoS2, phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct and appreciable band-gap that depends on the number of layers. Our transport studies indicate a carrier mobility that reflects its structural anisotropy and is superior to MoS2. At room temperature, our phosphorene field-effect transistors with 1.0 um channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm2/Vs, and an on/off ratio up to 1E4. We demonstrate the possibility of phosphorene integration by constructing the first 2D CMOS inverter of phosphorene PMOS and MoS2 NMOS transistors.

Thermal Conductivity of Nanoparticle -Fluid Mixture

Effective thermal conductivity of mixtures of e uids and nanometer-size particles is measured by a steady-state parallel-plate method. The tested e uids contain two types of nanoparticles, Al 2O3 and CuO, dispersed in water, vacuum pump e uid, engine oil, and ethylene glycol. Experimental results show that the thermal conductivities of nanoparticle ‐e uid mixtures are higher than those of the base e uids. Using theoretical models of effective thermal conductivity of a mixture, we have demonstrated that the predicted thermal conductivities of nanoparticle ‐e uid mixtures are much lower than our measured data, indicating the dee ciency in the existing models when used for nanoparticle ‐e uid mixtures. Possible mechanisms contributing to enhancement of the thermal conductivity of the mixtures are discussed. A more comprehensive theory is needed to fully explain the behavior of nanoparticle ‐e uid mixtures. Nomenclature cp = specie c heat k = thermal conductivity L = thickness Pe = Peclet number P q = input power to heater 1 r = radius of particle S = cross-sectional area T = temperature U = velocity of particles relative to that of base e uids ® = ratio of thermal conductivity of particle to that of base liquid ¯ = .® i 1/=.® i 2/ ° = shear rate of e ow Ω = density A = volume fraction of particles in e uids Subscripts

Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

Phosphorene, a elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (∼10,000 cm(2)/V·s) and a ∼0.3 eV direct band gap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm(2)/V·s, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness-dependent direct band gap. However, p–n junctions, the basic building blocks of modern electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate-tunable p–n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p–n heterojunction. Upon illumination, these ultrathin p–n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p–n diodes show promise for broad-band photodetection and solar energy harvesting.

Photoacoustic characterization of carbon nanotube array thermal interfaces

This work describes an experimental study of thermal conductance across multiwalled carbon nanotube (CNT) array interfaces, one sided (Si-CNT-Ag) and two sided (Si-CNT-CNT-Cu), using a photoacoustic technique (PA). Well-anchored, dense, and vertically oriented multiwalled CNT arrays have been directly synthesized on Si wafers and pure Cu sheets using plasma-enhanced chemical vapor deposition. With the PA technique, the small interface resistances of the highly conductive CNT interfaces can be measured with accuracy and precision. In addition, the PA technique can resolve the one-sided CNT interface component resistances (Si-CNT and CNT-Ag) and the two-sided CNT interface component resistances (Si-CNT, CNT-CNT, and CNT-Cu) and can estimate the thermal diffusivity of the CNT layers. The thermal contact resistances of the one- and two-sided CNT interfaces measured using the PA technique are 15.8±0.9 and 4.0±0.4mm2K∕W, respectively, at moderate pressure. These results compare favorably with those obtained usi...

Rational synthesis of ultrathin n-type Bi2Te3 nanowires with enhanced thermoelectric properties.

A rational yet scalable solution phase method has been established, for the first time, to obtain n-type Bi(2)Te(3) ultrathin nanowires with an average diameter of 8 nm in high yield (up to 93%). Thermoelectric properties of bulk pellets fabricated by compressing the nanowire powder through spark plasma sintering have been investigated. Compared to the current commercial n-type Bi(2)Te(3)-based bulk materials, our nanowire devices exhibit an enhanced ZT of 0.96 peaked at 380 K due to a significant reduction of thermal conductivity derived from phonon scattering at the nanoscale interfaces in the bulk pellets, which corresponds to a 13% enhancement compared to that of the best n-type commercial Bi(2)Te(2.7)Se(0.3) single crystals (~0.85) and is comparable to the best reported result of n-type Bi(2)Te(2.7)Se(0.3) sample (ZT = 1.04) fabricated by the hot pressing of ball-milled powder. The uniformity and high yield of the nanowires provide a promising route to make significant contributions to the manufacture of nanotechnology-based thermoelectric power generation and solid-state cooling devices with superior performance in a reliable and a reproducible way.

Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus.

Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-plane thermal conductivity of suspended few-layer black phosphorus measured by micro-Raman spectroscopy. The armchair and zigzag thermal conductivities are ∼20 and ∼40 W m−1 K−1 for black phosphorus films thicker than 15 nm, respectively, and decrease to ∼10 and ∼20 W m−1 K−1 as the film thickness is reduced, exhibiting significant anisotropy. The thermal conductivity anisotropic ratio is found to be ∼2 for thick black phosphorus films and drops to ∼1.5 for the thinnest 9.5-nm-thick film. Theoretical modelling reveals that the observed anisotropy is primarily related to the anisotropic phonon dispersion, whereas the intrinsic phonon scattering rates are found to be similar along the armchair and zigzag directions. Surface scattering in the black phosphorus films is shown to strongly suppress the contribution of long mean-free-path acoustic phonons.

Ultrasensitive mass sensing using mode localization in coupled microcantilevers

We use Anderson or vibration localization in coupled microcantilevers as an extremely sensitive method to detect the added mass of a target analyte. We focus on the resonance frequencies and eigenstates of two nearly identical coupled gold-foil microcantilevers. Theoretical and experimental results indicate that the relative changes in the eigenstates due to the added mass can be orders of magnitude greater than the relative changes in resonance frequencies. Moreover this sensing paradigm possesses intrinsic common mode rejection characteristics thus providing an alternate way to achieve ultrasensitive mass detection under ambient conditions.

Obtaining super resolution light spot using surface plasmon assisted sharp ridge nanoaperture

Finite difference time domain computations is used to study surface plasmon (SP) excitation around C- and H-shaped ridge nanoapertures made in silver film. The SP enhances optical transmission, in addition to the transmission mechanism of the waveguide propagation mode and Fabry-Perot-like resonance. However, the near-field collimation of ridge aperture is found completely destroyed. On the other hand, using a bowtie-shaped aperture with sharp ridges made in silver, the loss of near-field collimation can be recovered. A super resolution optical spot with full width half magnitude as small as 12nm×16nm is achieved due to the resonant SP excitation localized at the tips of bowtie. Much higher field enhancement is also obtained compared to the bowtie aperture made in chromium.

Increased real contact in thermal interfaces: A carbon nanotube/foil material

The thermal performance of an interface material comprised of a metal foil with dense, vertically oriented carbon nanotube (CNT) arrays synthesized on both of its surfaces is characterized for rough and smooth interfaces. The CNT/foil deforms in the interfaces by two mechanisms, CNT deformation and foil deformation, that may significantly increase the number of CNT contact spots on both sides of the foil. As a result, thermal interface resistances less than 10mm2K∕W are achieved at moderate pressures and compare very favorably to alternative interface materials and structures.

Enhanced optical near field from a bowtie aperture

The enhanced optical near field from a bowtie aperture in an aluminum film is experimentally demonstrated using near-field scanning optical microscopy. The full width half magnitude near-field optical spot is determined to be about 65×34nm2 by 458nm argon ion laser illumination, which is seven times smaller than those obtained from square and rectangular apertures of the same opening area. Light concentration and transmission enhancement of bowtie apertures promise a highly efficient nanoscale light source for near-field optical applications.