Xianhui Chen

Black phosphorus field-effect transistors

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.

Gate-tunable phase transitions in thin flakes of 1T-TaS2

The ability to tune material properties using gating by electric fields is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as the observation of gate electric-field-induced superconductivity and metal-insulator transitions. Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2. The strong charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS2 and produces a series of phase transitions in thin-flake samples with reduced dimensionality. We find that the charge-density wave states in 1T-TaS2 collapse in the two-dimensional limit at critical thicknesses. Meanwhile, at low temperatures, the ionic gating induces multiple phase transitions from Mott-insulator to metal in 1T-TaS2 thin flakes, with five orders of magnitude modulation in resistance, and superconductivity emerges in a textured charge-density wave state induced by ionic gating. Our method of gate-controlled intercalation opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.

Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films

For decades, two-dimensional electron gases (2DEG) have allowed important experimental discoveries and conceptual developments in condensed-matter physics. When combined with the unique electronic properties of two-dimensional crystals, they allow rich physical phenomena to be probed at the quantum level. Here, we create a 2DEG in black phosphorus--a recently added member of the two-dimensional atomic crystal family--using a gate electric field. The black phosphorus film hosting the 2DEG is placed on a hexagonal boron nitride substrate. The resulting high carrier mobility in the 2DEG allows the observation of quantum oscillations. The temperature and magnetic field dependence of these oscillations yields crucial information about the system, such as cyclotron mass and lifetime of its charge carriers. Our results, coupled with the fact that black phosphorus possesses anisotropic energy bands with a tunable, direct bandgap, distinguish black phosphorus 2DEG as a system with unique electronic and optoelectronic properties.

Direct observation of the layer-dependent electronic structure in phosphorene

Phosphorene, a single atomic layer of black phosphorus, has recently emerged as a new two-dimensional (2D) material that holds promise for electronic and photonic technologies. Here we experimentally demonstrate that the electronic structure of few-layer phosphorene varies significantly with the number of layers, in good agreement with theoretical predictions. The interband optical transitions cover a wide, technologically important spectral range from the visible to the mid-infrared. In addition, we observe strong photoluminescence in few-layer phosphorene at energies that closely match the absorption edge, indicating that they are direct bandgap semiconductors. The strongly layer-dependent electronic structure of phosphorene, in combination with its high electrical mobility, gives it distinct advantages over other 2D materials in electronic and opto-electronic applications.

Coexistence of static magnetism and superconductivity in SmFeAsO 1− x F x as revealed by muon spin rotation

The recent observation of superconductivity with critical temperatures (Tc) up to 55 K in the pnictide RFeAsO(1-x)F(x), where R is a lanthanide, marks the first discovery of a non-copper-oxide-based layered high-Tc superconductor. It has raised the suspicion that these new materials share a similar pairing mechanism to the cuprate superconductors, as both families exhibit superconductivity following charge doping of a magnetic parent material. In this context, it is important to follow the evolution of the microscopic magnetic properties of the pnictides with doping and hence to determine whether magnetic correlations coexist with superconductivity. Here, we present a muon spin rotation study on SmFeAsO(1-x)F(x), with x=0-0.30 that shows that, as in the cuprates, static magnetism persists well into the superconducting regime. This analogy is quite surprising as the parent compounds of the two families have rather different magnetic ground states: itinerant spin density wave for the pnictides contrasted with the Mott-Hubbard insulator in the cuprates. Our findings therefore suggest that the proximity to magnetic order and associated soft magnetic fluctuations, rather than strong electronic correlations in the vicinity of a Mott-Hubbard transition, may be the key ingredients of high-Tc superconductors.

Quantum Hall effect in black phosphorus two-dimensional electron system

The development of new, high-quality functional materials has been at the forefront of condensed-matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the materials base of two-dimensional electron systems (2DESs). Here, we report the observation of the integer quantum Hall effect in a high-quality black phosphorus 2DES. The high quality is achieved by embedding the black phosphorus 2DES in a van der Waals heterostructure close to a graphite back gate; the graphite gate screens the impurity potential in the 2DES and brings the carrier Hall mobility up to 6,000 cm(2) V(-1) s(-1). The exceptional mobility enabled us to observe the quantum Hall effect and to gain important information on the energetics of the spin-split Landau levels in black phosphorus. Our results set the stage for further study on quantum transport and device application in the ultrahigh mobility regime.

Observation of possible topological in-gap surface states in the Kondo insulator SmB6 by photoemission

SmB6, a well-known Kondo insulator, exhibits a transport anomaly at low temperature. This anomaly is usually attributed to states within the hybridization gap. Recent theoretical work and transport measurements suggest that these in-gap states could be ascribed to topological surface states, which would make SmB6 the first realization of topological Kondo insulator. Here by performing angle-resolved photoemission spectroscopy experiments, we directly observe several dispersive states within the hybridization gap of SmB6. These states show negligible kz dependence, which indicates their surface origin. Furthermore, we perform photoemission circular dichroism experiments, which suggest that the in-gap states possess chirality of the orbital angular momentum. These states vanish simultaneously with the hybridization gap at around 150 K. Together, these observations suggest the possible topological origin of the in-gap states.

Superconductivity at 5 K in alkali-metal-doped phenanthrene

Organic superconductors have π-molecular orbitals, from which electrons can become delocalized, giving rise to metallic conductivity due to orbital overlap between adjacent molecules. Here we report the discovery of superconductivity at a transition temperature (T(c)) of ~5 K in alkali-metal-doped phenanthrene. A 1-GPa pressure leads to a 20% increase of T(c), suggesting that alkali-metal-doped phenanthrene shows unconventional superconductivity. Raman spectra indicate that alkali-metal doping injects charge into the system to realize the superconductivity. The discovery of superconductivity in A(3)phenanthrene (where A can be either K or Rb) produces a novel broad class of superconductors consisting of fused hydrocarbon benzene rings with π-electron networks. An increase of T(c) with increasing number of benzene rings from three to five suggests that organic hydrocarbons with long chains of benzene rings are potential superconductors with high T(c).

Coexistence of superconductivity and antiferromagnetism in (Li0.8Fe0.2)OHFeSe.

FeSe-derived superconductors show some unique behaviors relative to iron-pnictide superconductors, which are very helpful to understand the mechanism of superconductivity in high-Tc iron-based superconductors. The low-energy electronic structure of the heavily electron-doped AxFe2Se2 (A=K, Rb, Cs) demonstrates that interband scattering or Fermi surface nesting is not a necessary ingredient for the unconventional superconductivity in iron-based superconductors. The superconducting transition temperature (Tc) in the one-unit-cell FeSe on SrTiO3 substrate can reach as high as ~65 K, largely transcending the bulk Tc of all known iron-based superconductors. However, in the case of AxFe2Se2, the inter-grown antiferromagnetic insulating phase makes it difficult to study the underlying physics. Superconductors of alkali metal ions and NH3 molecules or organic-molecules intercalated FeSe and single layer or thin film FeSe on SrTiO3 substrate are extremely air-sensitive, which prevents the further investigation of their physical properties. Therefore, it is urgent to find a stable and accessible FeSe-derived superconductor for physical property measurements so as to study the underlying mechanism of superconductivity. Here, we report the air-stable superconductor (Li0.8Fe0.2)OHFeSe with high temperature superconductivity at ~40 K synthesized by a novel hydrothermal method. The crystal structure is unambiguously determined by the combination of X-ray and neutron powder diffraction and nuclear magnetic resonance. It is also found that an antiferromagnetic order coexists with superconductivity in such new FeSe-derived superconductor. This novel synthetic route opens a new avenue for exploring other superconductors in the related systems. The combination of different structure characterization techniques helps to complementarily determine and understand the details of the complicated structures.Iron selenide superconductors exhibit a number of unique characteristics that are helpful for understanding the mechanism of superconductivity in high-Tc iron-based superconductors more generally. However, in the case of AxFe2Se2 (A = K, Rb, Cs), the presence of an intergrown antiferromagnetic insulating phase makes the study of the underlying physics problematic. Moreover, FeSe-based systems intercalated with alkali metal ions, NH3 molecules or organic molecules are extremely sensitive to air, which prevents the further investigation of their physical properties. It is therefore desirable to find a stable and easily accessible FeSe-based superconductor to study its physical properties in detail. Here, we report the synthesis of an air-stable material, (Li0.8Fe0.2)OHFeSe, which remains superconducting at temperatures up to ~40 K, by means of a novel hydrothermal method. The crystal structure is unambiguously determined by a combination of X-ray and neutron powder diffraction and nuclear magnetic resonance. Moreover, antiferromagnetic order is shown to coexist with superconductivity. This synthetic route opens a path for exploring superconductivity in other related systems, and confirms the appeal of iron selenides as a platform for understanding superconductivity in iron pnictides more broadly.

A large iron isotope effect in SmFeAsO1-xFx and Ba1-xKxFe2As2

The recent discovery of superconductivity in oxypnictides with a critical transition temperature (TC) higher than the McMillan limit of 39 K (the theoretical maximum predicted by Bardeen–Cooper–Schrieffer theory) has generated great excitement. Theoretical calculations indicate that the electron–phonon interaction is not strong enough to give rise to such high transition temperatures, but strong ferromagnetic/antiferromagnetic fluctuations have been proposed to be responsible. Superconductivity and magnetism in pnictide superconductors, however, show a strong sensitivity to the crystal lattice, suggesting the possibility of unconventional electron–phonon coupling. Here we report the effect of oxygen and iron isotope substitution on TC and the spin-density wave (SDW) transition temperature (TSDW) in the SmFeAsO1 - xFx and Ba1 - xKxFe2As2 systems. The oxygen isotope effect on TC and TSDW is very small, while the iron isotope exponent αC = -dlnTC/dlnM is about 0.35 (0.5 corresponds to the full isotope effect). Surprisingly, the iron isotope exchange shows the same effect on TSDW as TC. This indicates that electron–phonon interaction plays some role in the superconducting mechanism, but a simple electron–phonon coupling mechanism seems unlikely because a strong magnon–phonon coupling is included.