Xianwu Tang

Structural, magnetic and dielectric properties of the Aurivillius phase Bi6Fe2−xMnxTi3O18 (0 ≤ x ≤ 0.8)

The n = 5 Aurivillius phase ceramics Bi6Fe2−xMnxTi3O18 (BFMTO) (0 ≤ x ≤ 0.8) were synthesized with a conventional solid-state reaction method. All samples can be indexed with an orthorhombic structure with the space group B2cb. The magnetic measurements indicate that these ceramics are predominantly paramagnetic with the presence of short-range antiferromagnetic interactions and a weak ferromagnetic ordering state, implying that the predicted Fe3+–O–Mn3+ 180° ferromagnetic superexchange interaction based on the Goodenough–Kanamori rule might not be achieved in BFMTO ceramics through Mn substitution for Fe in the n = 5 Aurivillius phase. The dielectric loss of the x = 0.3 and 0.4 samples demonstrates the relaxation process and the rather large activation energy (2.63 eV for the x = 0.3 sample and 2.10 eV for the x = 0.4 sample) implies that this relaxation process is not due to the thermal motion of oxygen vacancies. The 0.5 ≤ x ≤ 0.8 samples exhibit a paraelectric–ferroelectric phase transition and the ferroelectric Curie temperature decreases upon increasing the doping level of Mn.

BiFeO3 thin films prepared on metallic Ni tapes by chemical solution deposition: effects of annealing temperature and a La0.5Sr0.5TiO3 buffer layer on the dielectric, ferroelectric and leakage properties

In this work, BiFeO3 (BFO) thin films were prepared on metallic Ni (200) tapes with and without a La0.5Sr0.5TiO3 (LSTO) buffer layer at different temperatures by chemical solution deposition. The effects of the annealing temperature as well as the LSTO buffer layer on the dielectric, leakage and ferroelectric properties have been studied in detail. The crystallite size, dielectric constant and leakage current density increase, while the coercive field decreases with increasing annealing temperature. The BFO thin films deposited directly on the Ni tapes are prone to wrinkling, while the wrinkles are smoothed by introducing a thin LSTO buffer layer. Decreased compressive microstrain as well as improved ferroelectric and leakage properties are observed in the BFO thin films deposited on the LSTO buffered Ni tapes. The results will provide an instructive route to optimize BiFeO3-based thin films on metallic tapes by chemical solution deposition methods.

Evolution of the resistive switching in chemical solution deposited-derived BiFeO3 thin films with dwell time and annealing temperature

Different resistive switching has been observed in the Au/BiFeO3/Pt structure composed with the BiFeO3 (BFO) thin films annealed at different temperature for different dwell time. Resistive switching decreases and disappearances with increasing annealing temperature, while reappear with prolonging dwell time. The evolution in the resistive switching is understand by the polarization modulated interfacial barriers for the low temperature annealing BFO films, oxygen vacancies rectifying interfacial depletion layer barriers for the high temperature and long time, and p-n junction for the films annealed for the longest time at high temperature.

Synthesis and characterization of ordered and disordered polycrystalline La2NiMnO6 thin films by sol–gel

Polycrystalline La(2)NiMnO(6) thin films are prepared on Pt/Ti/SiO(2)/Si substrates by the sol-gel method. Through controlling the processing parameters, the cation ordering can be tuned. The disordered and ordered thin films exhibit distinct differences for crystal structures as well as properties. The crystal structure at room temperature characterized by X-ray diffraction and Raman spectra is suggested to be monoclinic (P2(1)/n) and orthorhombic (Pbnm) for the ordered and disordered thin films, respectively. The ferromagnetic-paramagnetic transition is 263 K and 60 K for the ordered and disordered samples respectively, whereas the saturation magnetic moment at 5 K is 4.9 μ(B) fu(-1) (fu = formula unit) and 0.9 μ(B) fu(-1). The dielectric constant as well as magnetodielectric effect is higher for the ordered La(2)NiMnO(6) thin films. The magnetodielectric effect for the ordered thin film is dominantly contributed to the intrinsic coupling of electric dipole ordering and fluctuations and magnetic ordering and fluctuations, while it is mainly contributed to Maxwell-Wagner (M-W) effects for the disordered thin film. The successful achievements of ordered and disordered polycrystalline La(2)NiMnO(6) thin films will provide an effective route to fabricate double-perovskite polycrystalline thin films by the sol-gel method.

Enhanced remnant polarization in ferroelectric Bi6Fe2Ti3O18 thin films

For practical applications of ferroelectric memory, a large remnant polarization in nontoxic Pb-free ferroelectric materials is required. We prepared Bi6Fe2Ti3O18 thin films on Pt/Ti/SiO2/Si (100) substrates by chemical solution deposition using different annealing processes and found that a well-defined ferroelectric hysteresis loop with a rather large remnant polarization (Pr ≈ 21.5 μC cm−2) occurs in Bi6Fe2Ti3O18 thin films prepared by rapid thermal annealing in air. This value of remnant polarization is superior to those of other ferroelectric Aurivillius compounds such as Bi2WO6, Bi3TiNbO9, Bi4Ti3O12, Bi5FeTi3O15, and Bi6Fe2Ti3O18 thin films prepared by chemical solution deposition and pulsed laser deposition. The results of X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy and ferroelectric P–E hysteresis loops revealed that the grain size, surface morphologies, oxygen vacancies and lattice distortion play very important roles in the determination of the remnant polarization. The present study provides an effective route to prepare layered Aurivillius thin films with a large remnant polarization by chemical solution deposition.

Synthesis and Characterization of Self-assembled c-axis Oriented Bi2Sr3Co2Oy Thin Films by the Sol gel Method

Bi(2)Sr(3)Co(2)O(y) thin films are prepared on SrTiO(3) (100), (110) and (111) single crystal substrates using the sol-gel method. All the thin films are c-axis oriented regardless of the orientation of the substrate suggesting self-assembled c-axis orientation, and X-ray photoelectron spectroscopy results give evidence of coexistence of Co(3+) and Co(2+) ions in the derived films. Transmission electronic microscopy observations reveal that all samples are c-axis oriented with no obvious differences for different samples, and the c-axis lattice constant is determined as ~15 Å suggesting the misfit structure. A phenomenological thermodynamic phase diagram for self-assembled c-axis orientation is established for misfit cobaltate-based films using chemical solution deposition. All samples behave like semiconductors due to the coexistence of Co(3+)/Co(2+) ions, and the resistivity at 350 K is ~47, 39 and 17 mΩ cm for the thin films on SrTiO(3) (100), (110) and (111), respectively, whereas the Seebeck coefficient at 300 K is 97, 89 and 77 μV K(-1). The successful attainment of Bi(2)Sr(3)Co(2)O(y) thin films with self-assembled c-axis orientation will provide an effective prototype for investigation of growth mechanisms in complex oxide thin films with a misfit structure.

Solution processing of transparent conducting epitaxial La:BaSnO3 films with improved electrical mobility

As a type of perovskite transparent conducting oxides, La-doped BaSnO3 is considered as a very important material to construct all transparent perovskite devices. The difficulty in achievement of large-area films with high electrical mobility has hindered the development of La-doped BaSnO3 films. Here, we report the results about chemical solution deposition of Ba0.92La0.08SnO3−δ (BLSO) films. The post-annealing and atmosphere as well as lattice mismatch have been investigated. Post-annealing at 1000 °C can obviously improve the performance due to the enhanced crystallization. Under post-annealing in N2 atmosphere the room-temperature resistivity and electrical mobility can achieve 3.25 mΩ cm and 11.09 cm2 V−1 s−1, respectively, for the BLSO on LaAlO3 single crystal substrates due to the enhanced oxygen deficiencies. BLSO films with different orientation can be easily obtained by selection of the substrates, showing isotropic physical properties. Furthermore, the room-temperature resistivity and mobility ...

Magnetic, dielectric, and magneto-dielectric properties of rare-earth-substituted Aurivillius phase Bi6Fe1.4Co0.6Ti3O18

We investigate the magnetic, dielectric, and magnetodielectric properties of rare-earth-substituted Aurivillius phase Bi6Fe1.4Co0.6Ti3O18. The room-temperature ferromagnetic behavior is observed in all samples, and the rare-earth-substituted samples exhibit an enhanced magnetization. The weak ferromagnetism can be ascribed to the spin canting of the antiferromagnetic coupling of the Fe-based and Co-based sublattices via Dzyaloshinsky-Moriya interaction. The dielectric loss of all samples exhibits two dielectric relaxation peaks corresponding to two different relaxation mechanisms. One relaxation process with Ea = 0.5 eV is related to the hoping process of oxygen vacancies and the other one with Ea = 1.6 eV can be ascribed to the intrinsic conduction. The Gd-doped sample exhibits a remarkable magnetodielectric effect (9.4%) at RT implying this Aurivillius phase may be the potential candidate for magnetodielectric applications.

Facile chemical solution synthesis of p-type delafossite Ag-based transparent conducting AgCrO2 films in an open condition

Recent progress in transparent conducting components stimulates the extensive exploration of p-type transparent conducting oxide (TCO) materials. Here, we report the synthesis of a class of p-type delafossite Ag-based TCO thin films, AgCrO2 (ACO), using a facile chemical solution route in an open condition. Firstly, the evolution of microstructure, morphology, and optical properties with respect to annealing temperature is reported. The stoichiometric ACO thin films show self-assembled c-axis orientation. The 500 °C-annealed ACO thin film presents a relatively high quality, dense surface and good optical transmittance amongst all the derived thin films. Then, to improve the conductivity, Mg doping effects are investigated. Upon Mg doping, p-type conductivity is obtained for thin films of AgCr1−xMgxO2 (0.04 ≤ x ≤ 0.20). The conductivity initially increases from 3.1 × 10−3 to 67.7 × 10−3 S cm−1 with x increasing from 0.04 to 0.12 and then slightly decreases with further increasing Mg concentration. The Hall results display that the hole concentration gradually increases with increasing Mg dopant concentration, and the carrier mobility first increases with x increasing from 0.04 to 0.12, while decreases with x further increasing from 0.12 to 0.20. A high magnitude of optical transmittance near 60% in the visible region and wide optical bandgaps (3.41–3.66 eV) of the AgCr1−xMgxO2 thin films are observed. The facial fabrication of ACO thin films in an open condition will provide a start for the synthesis of Ag-based delafossite thin films.

Growth and optical properties of transparent CaMoO4 films by chemical solution deposition on Si and glass substrates

Nanocrystalline CaMoO4 (CMO) thin films were fabricated on Si and glass substrates via the chemical solution deposition (CSD) method. From x-ray diffraction, atomic force microscopy and Fourier transform infrared spectra results, relatively smooth Scheelite-type CMO thin films can be fabricated within the annealing temperature range from 400 to 700??C. The band gap is 4.18?eV calculated from the optical transmission spectra and the photoluminescence (PL) emission spectra show that the CMO thin films on Si have a broad green emission band centred at 490?nm. Our experimental results show that the CSD method is an alternative method to prepare nanocrystalline CMO thin films with a great PL property at low annealing temperatures.