Xiao Lan Huang

Structure of Co-2 × 2 nanoislands grown on Ag/Ge(111)-√3 × √3 surface studied by scanning tunneling microscopy.

We have found that Co-2 × 2 islands grown on an Ag/Ge(111)-√3 × √3 surface have hcp structure with the (11-20) orientation. The island evolution involves transformation of the unit cell shape from parallelogram into rectangular, which is accompanied by the island shape transformation from hexagonal into stripe-like. Identified are two crystallographic directions for the island growth, the pseudo-[0001] and the pseudo-[1-100]. We have observed the occurrence of a lateral shift between the topmost and the underlying bilayers in the case of the island growth along the pseudo-[0001] direction. In contrast, the topmost and the underlying bilayers are unshifted for the growth along the pseudo-[1-100] direction.

Nickel-containing nano-sized islands grown on Ge(111)-c(2 × 8) and Ag/Ge(111)-(√3 × √3) surfaces

The formation of nano-islands on both a Ge(111)-c(2 × 8) surface and an Ag/Ge(111)-(√3 × √3) surface evaporated with 0.1 ML Ni was investigated by scanning tunneling microscopy (STM). We have noticed that at temperatures lower than 670 K, the reaction between Ni and the individual substrate surfaces proceeds to form different structures: flat-topped islands with a 2√7 × 2√7 or a 3 × 3 reconstruction on the Ni/Ge(111)-c(2 × 8) surface vs. islands with a 7 × 7 reconstruction on the Ni/Ag/Ge(111)-(√3 × √3) surface. From this we have inferred that within a temperature range between room temperature and 670 K, the intermediate Ag layer retards mixing between Ni and Ge atoms. As a result, the grown islands are composed of pure Ni atoms. Within a temperature range from 670 to 770 K, most islands produced on the Ag/Ge(111)-(√3 × √3) surface are identical with those formed on the Ni/Ge(111)-c(2 × 8) surface, suggesting that above 670 K, Ni atoms are likely to bind with Ge atoms. However, an essential difference between STM images of the surfaces under study exists in the appearance of large elongated islands on the Ni/Ag/Ge(111)-(√3 × √3) surface. The formation of the latter is explained in terms of a difference in energy for Ni diffusion on the Ge(111)-c(2 × 8) and Ag/Ge(111)-(√3 × √3) surfaces.

Thermal evolution of Co on the coexisting Ag/Ge(111)-\( \sqrt 3 \times \sqrt 3 \) and Ag/Ge(111)-4 × 4 phases

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Thermal evolution of the morphology of Ni/Ge(111)-c(2 × 8) surface

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Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)-√3×√3 surface

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Electronic structure of Co islands grown on the √3×√3-Ag/Ge(111) surface

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