Xiaofeng F. Duan

Modeling positrons in molecular electronic structure calculations with the nuclear-electronic orbital method.

The nuclear-electronic orbital (NEO) method was modified and extended to positron systems for studying mixed positronic-electronic wavefunctions, replacing the mass of the proton with the mass of the positron. Within the modified NEO framework, the NEO-HF (Hartree-Fock) method provides the energy corresponding to the single-configuration mixed positronic-electronic wavefunction, minimized with respect to the molecular orbitals expressed as linear combinations of Gaussian basis functions. The electron-electron and electron-positron correlation can be treated in the NEO framework with second-order perturbation theory (NEO-MP2) or multiconfigurational methods such as the full configuration interaction (NEO-FCI) and complete active space self-consistent-field (NEO-CASSCF) methods. In addition to implementing these methods for positronic systems, strategies for calculating electron-positron annihilation rates using NEO-HF, NEO-MP2, and NEO-FCI wavefunctions were also developed. To apply the NEO method to the positronium hydride (PsH) system, positronic and electronic basis sets were optimized at the NEO-FCI level and used to compute NEO-MP2 and NEO-FCI energies and annihilation rates. The effects of basis set size on NEO-MP2 and NEO-FCI correlation energies and annihilation rates were compared. Even-tempered electronic and positronic basis sets were also optimized for the e+LiH molecule at the NEO-MP2 level and used to compute the equilibrium bond length and vibrational energy.

Theoretical investigation of stabilities and optical properties of Si12C12 clusters

By sorting through hundreds of globally stable Si12C12 isomers using a potential surface search and using simulated annealing, we have identified low-energy structures. Unlike isomers knit together by Si-C bonds, the lowest energy isomers have segregated carbon and silicon regions that maximize stronger C-C bonding. Positing that charge separation between the carbon and silicon regions would produce interesting optical absorption in these cluster molecules, we used time-dependent density functional theory to compare the calculated optical properties of four isomers representing structural classes having different types of silicon and carbon segregation regions. Absorptions involving charge transfer between segregated carbon and silicon regions produce lower excitation energies than do structures having alternating Si-C bonding for which frontier orbital charge transfer is exclusively from separated carbon atoms to silicon atoms. The most stable Si12C12 isomer at temperatures below 1100 K is unique as regards its high symmetry and large optical oscillator strength in the visible blue. Its high-energy and low-energy visible transitions (1.15 eV and 2.56 eV) are nearly pure one-electron silicon-to-carbon transitions, while an intermediate energy transition (1.28 eV) is a nearly pure carbon-to-silicon one-electron charge transfer.

Predictive coupled-cluster isomer orderings for some SinCm (m, n ≤ 12) clusters: A pragmatic comparison between DFT and complete basis limit coupled-cluster benchmarks

The accurate determination of the preferred Si12C12 isomer is important to guide experimental efforts directed towards synthesizing SiC nano-wires and related polymer structures which are anticipated to be highly efficient exciton materials for the opto-electronic devices. In order to definitively identify preferred isomeric structures for silicon carbon nano-clusters, highly accurate geometries, energies, and harmonic zero point energies have been computed using coupled-cluster theory with systematic extrapolation to the complete basis limit for set of silicon carbon clusters ranging in size from SiC3 to Si12C12. It is found that post-MBPT(2) correlation energy plays a significant role in obtaining converged relative isomer energies, suggesting that predictions using low rung density functional methods will not have adequate accuracy. Utilizing the best composite coupled-cluster energy that is still computationally feasible, entailing a 3-4 SCF and coupled-cluster theory with singles and doubles extrapolation with triple-ζ (T) correlation, the closo Si12C12 isomer is identified to be the preferred isomer in the support of previous calculations [X. F. Duan and L. W. Burggraf, J. Chem. Phys. 142, 034303 (2015)]. Additionally we have investigated more pragmatic approaches to obtaining accurate silicon carbide isomer energies, including the use of frozen natural orbital coupled-cluster theory and several rungs of standard and double-hybrid density functional theory. Frozen natural orbitals as a way to compute post-MBPT(2) correlation energy are found to be an excellent balance between efficiency and accuracy.

The closo-Si12C12 molecule from cluster to crystal: A theoretical prediction

The structure of closo-Si12C12 is unique among stable SinCm isomers (n, m > 4) because of its high symmetry, π-π stacking of C6 rings and unsaturated silicon atoms at symmetrical peripheral positions. Dimerization potential surfaces reveal various dimerization reactions that form between two closo-Si12C12 molecules through Si-Si bonds at unsaturated Si atoms. As a result the closo-Si12C12 molecule is capable of polymerization to form stable 1D polymer chains, 2D crystal layers, and 3D crystals. 2D crystal structures formed by side-side polymerization satisfy eight Si valences on each monomer without large distortion of the monomer structure. 3D crystals are formed by stacking 2D structures in the Z direction, preserving registry of C6 rings in monomer moiety.

The closo-Si12C12 molecule from cluster to crystal: Effects of hydrogenation and oligomerization on excited states

Excited state properties of chain and cyclic oligomers of closo-Si12C12 moieties are calculated using time-dependent density functional theory methods. Ultraviolet, visible, and near-infrared photo-absorption properties are described for oligomers that form by linking closo-Si12C12 monomer moieties through Si-Si bonds. Natural transition orbitals for electron and hole states of stationary-state excitons in oligomers were compared to understand how exciton states are influenced by oligomer structure. Depending on the structure, some prominent excited states have large electron-hole charge separation while others do not; some exhibit exciton delocalization while others do not. With increasing oligomer length, the character of the transition between silicon and carbon regions tends to be maintained. And the extent of exciton delocalization and charge separation for an excitation is strongly influenced by the number and types of Si-Si links between oligomer units. We find that cyclic quadramers have spectroscopy properties akin to those of J-aggregates, including the tendency to collapse oligomer excitation transition energies into a narrow single peak. Hydrogenation influences some excited state distributions and energies. Phase behaviors reveal electron state or hole state equivalence in certain molecules that are differently hydrogenated, illustrating the potential for near-resonant exciton transfer between adjacent donor and acceptor species.

Application of GAMESS/NEO to quantum calculations of muonic molecules

The General Atomic and Molecular Electronic Structure System (GAMESS) has been modified to perform studies involving negative muons. This system, coupled with the Nuclear-Electronic Orbital (NEO) method enables the ab-initio study of muonic atoms where both the negative muon and the positive nuclei are modeled as quantum particles. This is of particular usefulness in the study light nuclei, muonic atoms, such as is encountered in muon-catalyzed fusion. NEO was also modified to allow the inclusion of positive exotic-particles to be studied using open and closed shell Hartree-Fock and Configuration Interaction. Capitalizing on these modified methods, the muon density and vibrational dynamics of some light muonic molecules have been analyzed.

Valence and charge-transfer optical properties for some SinCm (m, n ≤ 12) clusters: Comparing TD-DFT, complete-basis-limit EOMCC, and benchmarks from spectroscopy

Accurate optical characterization of the closo-Si12C12 molecule is important to guide experimental efforts toward the synthesis of nano-wires, cyclic nano-arrays, and related array structures, which are anticipated to be robust and efficient exciton materials for opto-electronic devices. Working toward calibrated methods for the description of closo-Si12C12 oligomers, various electronic structure approaches are evaluated for their ability to reproduce measured optical transitions of the SiC2, Si2Cn (n = 1-3), and Si3Cn (n = 1, 2) clusters reported earlier by Steglich and Maier [Astrophys. J. 801, 119 (2015)]. Complete-basis-limit equation-of-motion coupled-cluster (EOMCC) results are presented and a comparison is made between perturbative and renormalized non-iterative triples corrections. The effect of adding a renormalized correction for quadruples is also tested. Benchmark test sets derived from both measurement and high-level EOMCC calculations are then used to evaluate the performance of a variety of density functionals within the time-dependent density functional theory (TD-DFT) framework. The best-performing functionals are subsequently applied to predict valence TD-DFT excitation energies for the lowest-energy isomers of SinC and Sin-1C7-n (n = 4-6). TD-DFT approaches are then applied to the SinCn (n = 4-12) clusters and unique spectroscopic signatures of closo-Si12C12 are discussed. Finally, various long-range corrected density functionals, including those from the CAM-QTP family, are applied to a charge-transfer excitation in a cyclic (Si4C4)4 oligomer. Approaches for gauging the extent of charge-transfer character are also tested and EOMCC results are used to benchmark functionals and make recommendations.

Oxygen‐Atom Defects In 6H Silicon Carbide Implanted Using 24‐ MeV O3+ Ions Measured Using Three‐Dimensional Positron Annihilation Spectroscopy System (3DPASS)

Three dimensional electron‐positron (e−‐e+) momentum distributions were measured for single crystal 6H silicon carbide (SiC); both virgin and having implanted oxygen‐atom defects. 6H SiC samples were irradiated by 24‐ MeV O3+ ions at 20 particle‐nanoamps at the Sandia National Laboratory’s Ion Beam Facility. O3+ ions were implanted 10.8 μm deep normal to the (0001) face of one side of the SiC samples. During positron annihilation measurements, the opposite face of the 254.0‐μm thick SiC samples was exposed to positrons from a 22Na source. This technique reduced the influence on the momentum measurements of vacancy‐type defects resulting from knock‐on damage by the O3+ ions. A three‐dimensional positron annihilation spectroscopy system (3DPASS) was used to measure e−‐e+ momentum distributions for virgin and irradiated 6H SiC crystal both before and following annealing. 3DPASS simultaneously measures coincident Doppler‐broadening (DBAR) and angular correlation of annihilation radiation (ACAR) spectra. DBAR ...