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Dive into the research topics where Xiaohui Zhao is active.

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Featured researches published by Xiaohui Zhao.


Sensors | 2017

Integrated Temperature and Hydrogen Sensors with MEMS Technology

Hongchuan Jiang; Min Huang; Yibing Yu; Xiaoyu Tian; Xiaohui Zhao; Wanli Zhang; Jianfeng Zhang; Yifan Huang; Kun Yu

In this work, a PdNi thin film hydrogen gas sensor with integrated Pt thin film temperature sensor was designed and fabricated using the micro-electro-mechanical system (MEMS) process. The integrated sensors consist of two resistors: the former, based on Pt film, is used as a temperature sensor, while the latter had the function of hydrogen sensing and is based on PdNi alloy film. The temperature coefficient of resistance (TCR) in both devices was measured and the output response of the PdNi film hydrogen sensor was calibrated based on the temperature acquired by the Pt temperature sensor. The SiN layer was deposited on top of Pt film to inhibit the hydrogen diffusion and reduce consequent disturbance on temperature measurement. The TCR of the PdNi film and the Pt film was about 0.00122/K and 0.00217/K, respectively. The performances of the PdNi film hydrogen sensor were investigated with hydrogen concentrations from 0.3% to 3% on different temperatures from 294.7 to 302.2 K. With the measured temperature of the Pt resistor and the TCR of the PdNi film, the impact of the temperature on the performances of the PdNi film hydrogen sensor was reduced. The output response, response time and recovery time of the PdNi film hydrogen sensors under the hydrogen concentration of 0.5%, 1.0%, 1.5% and 2.0% were measured at 313 K. The output response of the PdNi thin film hydrogen sensors increased with increasing hydrogen concentration while the response time and recovery time decreased. A cycling test between pure nitrogen and 3% hydrogen concentration was performed at 313 K and PdNi thin film hydrogen sensor demonstrated great repeatability in the cycling test.


ACS Applied Materials & Interfaces | 2018

Reactive B/Ti Nano-Multilayers with Superior Performance in Plasma Generation.

Yuxin Zhang; Yao Wang; Mengting Ai; Hongchuan Jiang; Yichao Yan; Xiaohui Zhao; Liang Wang; Wanli Zhang; Yanrong Li

In this study, reactive B/Ti nano-multilayers were fabricated by magnetron sputtering and the structure and chemical composition were confirmed by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The periodic multilayer structure can be clearly visible, and the multilayer material is composed of B layers (amorphous), Ti layers (nano-polycrystalline), and intermixed reactants in a metastable system. The as-deposited B/Ti nano-multilayers exhibit a significantly high heat release of 3722 J/g, with an onset reaction temperature of 449 °C. On the basis of these properties, an integrated microigniter was designed and prepared by integration of the B/Ti nano-multilayers with a TaN film bridge for potential applications in plasma generation, and the electric ignition processes were investigated with discharge voltages ranging from 25 to 40 V. The integrated microigniter exhibits improved and stable ignition performances with a short burst time, high plasma temperature, and violent explosion phenomenon in comparison with the TaN film igniter. Overall, the plasma generation of the microigniter can be enhanced substantially by integration with the B/Ti nano-multilayers.


Journal of Physics: Conference Series | 2017

Preparation and evaluation of PdCr thin film resistive strain gauges

Hao Liu; Shuwen Jiang; Hongchuan Jiang; Xiaohui Zhao; Wanli Zhang

Thin film resistive strain gauges using PdCr alloy as sensing material were fabricated on nickel-based alloy substrate, and evaluated for strain response, apparent strain and drift strain over a temperature range to 800 °C. The results indicated that the PdCr thin film strain gauge showed an excellent linear response to applied strain and stable gauge factor at different temperatures. The apparent strain can be estimated and compensated due to its repeatability and low value. The drift strain can be neglected until 600 °C. Even at 800 °C the drift strain can also be corrected since it drifted slightly and linearly. The repeatability of PdCr thin film strain gauge was also evaluated. It showed that the repeatable measurement error was 6.4%.


Journal of Alloys and Compounds | 2017

Annealing effects in ITO based ceramic thin film thermocouples

Xiaohui Zhao; Haitao Li; Ke Yang; Shuwen Jiang; Hongchuan Jiang; Wanli Zhang


Crystals | 2017

Microstructure Evolution and Thermoelectric Property of Pt-PtRh Thin Film Thermocouples

Xiaohui Zhao; Xianguai Liang; Shuwen Jiang; Wanli Zhang; Hongchuan Jiang


Journal of Materials Science: Materials in Electronics | 2016

Stability and thermoelectric properties of ITON:Pt thin film thermocouples

Xiaohui Zhao; Ke Yang; Yiran Wang; Yinzhi Chen; Hongchuang Jiang


Vacuum | 2017

Preparation and thermoelectric characteristics of ITO/Pt thin film thermocouples on Ni-based superalloy substrate

Xiaohui Zhao; Haitao Li; Yinzhi Chen; Hongchuan Jiang


Rare Metals | 2017

Enhanced thermoelectric property and stability of NiCr–NiSi thin film thermocouple on superalloy substrate

Xiaohui Zhao; Yiran Wang; Yinzhi Chen; Hongchuan Jiang; Wanli Zhang


Applied Thermal Engineering | 2017

B/Ti nano-multilayers as effective heat energy source for enhanced micro-initiator

Yuxin Zhang; Hongchuan Jiang; Daipeng Xing; Xiaohui Zhao; Wanli Zhang; Yanrong Li


Nanoscale Research Letters | 2017

Characteristics of the Energetic Micro-initiator Through Integrating Al/Ni Nano-multilayers with Cu Film Bridge

Yuxin Zhang; Hongchuan Jiang; Xiaohui Zhao; Yichao Yan; Wanli Zhang; Yanrong Li

Collaboration


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Hongchuan Jiang

University of Electronic Science and Technology of China

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Wanli Zhang

University of Electronic Science and Technology of China

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Shuwen Jiang

University of Electronic Science and Technology of China

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Yuxin Zhang

University of Electronic Science and Technology of China

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Yanrong Li

University of Electronic Science and Technology of China

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Yichao Yan

University of Electronic Science and Technology of China

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Yinzhi Chen

University of Electronic Science and Technology of China

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Haitao Li

University of Electronic Science and Technology of China

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Hao Liu

University of Electronic Science and Technology of China

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Hongmin Wang

University of Electronic Science and Technology of China

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