Xiaojie Yin

Tunable filters based on an SOI nano-wire waveguide micro ring resonator

Micro ring resonator (MRR) filters based on a silicon on insulator (SOI) nanowire waveguide are fabricated by electron beam photolithography (EBL) and inductive coupled plasma (ICP) etching technology. The cross-section size of the strip waveguides is 450 × 220 nm2, and the bending radius of the micro ring is around 5 μm. The test results from the tunable filter based on a single ring show that the free spectral range (FSR) is 16.8 nm and the extinction ratio (ER) around the wavelength 1550 nm is 18.1 dB. After thermal tuning, the filters tuning bandwidth reaches 4.8 nm with a tuning efficiency of 0.12 nm/°C Meanwhile, we fabricated and studied multi-channel filters based on a single ring and a double ring. After measurement, we drew the following conclusions: during the signal transmission of multi-channel filters, crosstalk exists mainly among different transmission channels and are fairly distinct when there are signals input to add ports.

Low power consumption 4-channel variable optical attenuator array based on planar lightwave circuit technique*

The power consumption of a variable optical attenuator (VOA) array based on a silica planar lightwave circuit was investigated. The thermal field profile of the device was optimized using the finite-element analysis. The simulation results showed that the power consumption reduces as the depth of the heat-insulating grooves is deeper, the up-cladding is thinner, the down-cladding is thicker, and the width of the cladding ridge is narrower. The materials component and thickness of the electrodes were also optimized to guarantee the driving voltage under 5 V. The power consumption was successfully reduced to as low as 155 mW at an attenuation of 30 dB in the experiment.

Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating*

The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width.