Xiaoli Chen

Evolutionary Metal Oxide Clusters for Novel Applications: Toward High‐Density Data Storage in Nonvolatile Memories

Because of current fabrication limitations, miniaturizing nonvolatile memory devices for managing the explosive increase in big data is challenging. Molecular memories constitute a promising candidate for next-generation memories because their properties can be readily modulated through chemical synthesis. Moreover, these memories can be fabricated through mild solution processing, which can be easily scaled up. Among the various materials, polyoxometalate (POM) molecules have attracted considerable attention for use as novel data-storage nodes for nonvolatile memories. Here, an overview of recent advances in the development of POMs for nonvolatile memories is presented. The general background knowledge of the structure and property diversity of POMs is also summarized. Finally, the challenges and perspectives in the application of POMs in memories are discussed.

Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching

The in-depth understanding of ions generation and movement inside all-inorganic perovskite quantum dots (CsPbBr3 QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited. Here, it is shown that formation and annihilation of metal conductive filaments and Br- ion vacancy filaments driven by an external electric field and light irradiation can lead to pronounced resistive-switching effects. Verified by field-emission scanning electron microscopy as well as energy-dispersive X-ray spectroscopy analysis, the resistive switching behavior of CsPbBr3 QD-based photonic resistive random-access memory (RRAM) is initiated by the electrochemical metallization and valance change. By coupling CsPbBr3 QD-based RRAM with a p-channel transistor, the novel application of an RRAM-gate field-effect transistor presenting analogous functions of flash memory is further demonstrated. These results may accelerate the technological deployment of all-inorganic perovskite QD-based photonic resistive memory for successful logic application.

Biological Spiking Synapse Constructed from Solution Processed Bimetal Core-Shell Nanoparticle Based Composites

Inspired by the highly parallel processing power and low energy consumption of the biological nervous system, the development of a neuromorphic computing paradigm to mimic brain-like behaviors with electronic components based artificial synapses may play key roles to eliminate the von Neumann bottleneck. Random resistive access memory (RRAM) is suitable for artificial synapse due to its tunable bidirectional switching behavior. In this work, a biological spiking synapse is developed with solution processed Au@Ag core-shell nanoparticle (NP)-based RRAM. The device shows highly controllable bistable resistive switching behavior due to the favorable Ag ions migration and filament formation in the composite film, and the good charge trapping and transport property of Au@Ag NPs. Moreover, comprehensive synaptic functions of biosynapse including paired-pulse depression, paired-pulse facilitation, post-tetanic potentiation, spike-time-dependent plasticity, and the transformation from short-term plasticity to long-term plasticity are emulated. This work demonstrates that the solution processed bimetal core-shell nanoparticle-based biological spiking synapse provides great potential for the further creation of a neuromorphic computing system.

Phototunable Biomemory Based on Light-Mediated Charge Trap

Abstract Phototunable biomaterial‐based resistive memory devices and understanding of their underlying switching mechanisms may pave a way toward new paradigm of smart and green electronics. Here, resistive switching behavior of photonic biomemory based on a novel structure of metal anode/carbon dots (CDs)‐silk protein/indium tin oxide is systematically investigated, with Al, Au, and Ag anodes as case studies. The charge trapping/detrapping and metal filaments formation/rupture are observed by in situ Kelvin probe force microscopy investigations and scanning electron microscopy and energy‐dispersive spectroscopy microanalysis, which demonstrates that the resistive switching behavior of Al, Au anode‐based device are related to the space‐charge‐limited‐conduction, while electrochemical metallization is the main mechanism for resistive transitions of Ag anode‐based devices. Incorporation of CDs with light‐adjustable charge trapping capacity is found to be responsible for phototunable resistive switching properties of CDs‐based resistive random access memory by performing the ultraviolet light illumination studies on as‐fabricated devices. The synergistic effect of photovoltaics and photogating can effectively enhance the internal electrical field to reduce the switching voltage. This demonstration provides a practical route for next‐generation biocompatible electronics.

Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing

Inspired by the biological neuromorphic system, which exhibits a high degree of connectivity to process huge amounts of information, photonic memory is expected to pave a way to overcome the von Neumann bottleneck for nonconventional computing. Here, a photonic flash memory based on all-inorganic CsPbBr3 perovskite quantum dots (QDs) is demonstrated. The heterostructure formed between the CsPbBr3 QDs and semiconductor layer serves as a basis for optically programmable and electrically erasable characteristics of the memory device. Furthermore, synapse functions including short-term plasticity, long-term plasticity, and spike-rate-dependent plasticity are emulated at the device level. The photonic potentiation and electrical habituation are implemented and the synaptic weight exhibits multiple wavelength response from 365, 450, 520 to 660 nm. These results may locate the stage for further thrilling novel advances in perovskite-based memories.