Xiaolu Huang

SRAM (Static Random Access Memory) unit structure based on fake contact etch stop layer technology and preparation method of SRAM unit structure

MULTI-WORKING VOLTAGES CMOS DEVICE WITH SINGLE GATE OXIDE LAYER THICKNESS AND MANUFACTURING METHOD THEREOF

Post-gate technology semiconductor device inhibiting GIDL effect and preparation method thereof

Method for manufacturing DRAM (dynamic random access memory) of gate-last 2 transistor

Copper-interconnection production method for ultra-low dielectric constant film

Method for improving negative bias temperature instability effect of high-k grid dielectric positive channel metal oxide semiconductor (PMOS) in gate-first process

Method for improving metal-oxide-semiconductor field-effect transistor (MOSFET/ MOS device) carrier mobility and MOS device manufacturing method

Self-alignment channel doping for restraining CMOS (Complementary Metal Oxide Semiconductor) short channel effect and preparation method thereof

Strained silicon CMOS (complementary metal oxide semiconductor) structure based on localized hybrid crystal orientation and preparation method thereof

Method of suppressing short-channel effect of CMOS (Complementary Metal Oxide Semiconductor)