Xiaoming Ge

Graphene/Mo2C heterostructure directly grown by chemical vapor deposition

Graphene-based heterostructure is one of the most attractive topics in physics and material sciences due to its intriguing properties and applications. We report the one-step fabrication of a novel graphene/Mo2C heterostructure by using chemical vapor deposition (CVD). The composition and structure of the heterostructure are characterized through energy-dispersive spectrometer, transmission electron microscope, and Raman spectrum. The growth rule analysis of the results shows the flow rate of methane is a main factor in preparing the graphene/Mo2C heterostructure. A schematic diagram of the growth process is also established. Transport measurements are performed to study the superconductivity of the heterostructure which has potential applications in superconducting devices.

Low-energy phase change memory with graphene confined layer

How to reduce the Reset operation energy is the key scientific and technological problem in the field of phase change memory (PCM). Here, we show in the Ge2Sb2Te5 based PCM cell, inserting an additional graphene monolayer in the Ge2Sb2Te5 layer can remarkably decrease both the Reset current and energy. Because of the small out-of-plane electrical and thermal conductivities of such monolayer graphene, the Set resistance and the heat dissipation towards top TiN electrode of the modified PCM cell are significantly increased and decreased, respectively. The mushroom-typed larger active phase transition volume thus can be confined inside the underlying thinner GST layer, resulting in the lower power consumption.

Improved carrier mobility of chemical vapor deposition-graphene by counter-doping with hydrazine hydrate

We developed a counter-doping method to tune the electronic properties of chemical vapor deposition (CVD)-grown graphene by varying the concentration and time of graphene exposure to hydrazine hydrate (N2H4·H2O). The shift of G and 2D peaks of Raman spectroscopy is analyzed as a function of N2H4·H2O concentration. The result revealed that N2H4·H2O realized n-type doping on CVD grown graphene. X-ray photoelectron spectroscopy measurement proved the existence of nitrogen, which indicated the adsorption of N2H4 on the surface of graphene. After counter-doping, carrier mobility, which was measured by Hall measurements, increased three fold.

High pressure-assisted transfer of ultraclean chemical vapor deposited graphene

We develop a high pressure-assisted (approximately 1000 kPa) transfer method to remove polymer residues and effectively reduce damages on the surface of graphene. By introducing an ethanol pre-dehydration technique and optimizing temperature, the graphene surface becomes nearly free of residues, and the quality of graphene is improved obviously when temperature reaches 140 °C. The graphene obtained using the high pressure-assisted transfer method also exhibits excellent electrical properties with an average sheet resistance of approximately 290 Ω/sq and a mobility of 1210 cm2/V·s at room temperature. Sheet resistance and mobility are considerably improved compared with those of the graphene obtained using the normal wet transfer method (average sheet resistance of approximately 510 ohm/sq and mobility of 750 cm2/V·s).

Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition

This study investigates the growth promotion of vertically oriented graphene in plasma-enhanced chemical vapor deposition through Ar plasma treatment. Combined with various substrate treatments, including hydrofluoric acid etching and oxidation after Ar plasma treatment, Ar plasma pretreatment promotes vertical growth through the microcavity on the rough substrate surface and the active growth sites. The microcavity affects the strain distribution and defects of as-deposited planar films, which benefit the transition of 2D deposition to 3D vertical growth. A growth model on the effect of Ar plasma pretreatment is proposed.

Stripe distribution on graphene-coated Cu surface and its effect on oxidation and corrosion resistance of graphene

The morphology and distribution of the stripes caused by Cu surface reconstruction were measured, and the effects of stripes on graphene stability were studied by oxidation and corrosion. The results reveal that the stripes are determined by the crystal orientation of both the Cu surface and graphene, which can both change the stripe distribution, and the stripes can also be influenced by the graphene thickness. The stripes would not induce cracks or destruction to the graphene. The oxidation resistance of graphene can be improved by Cu surface reconstruction. The local nonuniform distortion of the stripe area may induce a bigger strain in the graphene which, in turn, may induce structure instability and result in local stability degeneration in the stripe area.