Xiaoxiang Sun

Air-processed, efficient CH3NH3PbI3−xClx perovskite solar cells with organic polymer PTB7 as a hole-transport layer

Low-temperature, solution-processed perovskite solar cells (PSCs), which utilized organic poly[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]-thiophenediyl] (PTB7) as a hole-transport layer (HTL), achieved a power conversion efficiency (PCE) as high as 13.29% when fabricated in ambient air. Through a comparative study, we demonstrate this PCE value to be superior compared to its counterparts with spiro-OMeTAD or P3HT as the HTL; the superiority consists of a higher fill factor (FF) and open-circuit voltage (Voc). By probing the absorption spectrum of CH3NH3PbI3−xClx before and after spin-coating the PTB7, it is discovered that the spin coating of PTB7 has little influence on the quality of the perovskite films. Furthermore, it is shown that PTB7 possesses higher conductivity compared with conventional HTLs, including spiro-OMeTAD, P3HT and PCDTBT. Moreover, in order to further improve device performance, the prevalent additives lithium bis (trifluoromethylsulphony) imide (LiTFSI) and 4-tert-butylpyridine (t-Bp) are investigated, along with a post-annealing process that is applied to the whole device. The results presented here and the overall fabrication method represent a helpful new approach for fabricating highly efficient perovskite-based photovoltaic devices.

UV-Sintered Low-Temperature Solution-Processed SnO2 as Robust Electron Transport Layer for Efficient Planar Heterojunction Perovskite Solar Cells

Recently, low temperature solution-processed tin oxide (SnO2) as a versatile electron transport layer (ETL) for efficient and robust planar heterojunction (PH) perovskite solar cells (PSCs) has attracted particular attention due to its outstanding properties such as high optical transparency, high electron mobility, and suitable band alignment. However, for most of the reported works, an annealing temperature of 180 °C is generally required. This temperature is reluctantly considered to be a low temperature, especially with respect to the flexible application where 180 °C is still too high for the polyethylene terephthalate flexible substrate to bear. In this contribution, low temperature (about 70 °C) UV/ozone treatment was applied to in situ synthesis of SnO2 films deposited on the fluorine-doped tin oxide substrate as ETL. This method is a facile photochemical treatment which is simple to operate and can easily eliminate the organic components. Accordingly, PH PSCs with UV-sintered SnO2 films as ETL were successfully fabricated for the first time. The device exhibited excellent photovoltaic performance as high as 16.21%, which is even higher than the value (11.49%) reported for a counterpart device with solution-processed and high temperature annealed SnO2 films as ETL. These low temperature solution-processed and UV-sintered SnO2 films are suitable for the low-cost, large yield solution process on a flexible substrate for optoelectronic devices.

Toward Revealing the Critical Role of Perovskite Coverage in Highly Efficient Electron-Transport Layer-Free Perovskite Solar Cells: An Energy Band and Equivalent Circuit Model Perspective

Currently, most efficient perovskite solar cells (PVKSCs) with a p-i-n structure require simultaneously electron transport layers (ETLs) and hole transport layers (HTLs) to help collecting photogenerated electrons and holes for obtaining high performance. ETL free planar PVKSC is a relatively new and simple structured solar cell that gets rid of the complex and high temperature required ETL (such as compact and mesoporous TiO2). Here, we demonstrate the critical role of high coverage of perovskite in efficient ETL free PVKSCs from an energy band and equivalent circuit model perspective. From an electrical point of view, we confirmed that the low coverage of perovskite does cause localized short circuit of the device. With coverage optimization, a planar p-i-n(++) device with a power conversion efficiency of over 11% was achieved, implying that the ETL layer may not be necessary for an efficient device as long as the perovskite coverage is approaching 100%.