Xiaoyue He
Chinese Academy of Sciences
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Publication
Featured researches published by Xiaoyue He.
Applied Physics Letters | 2004
Q. Wan; Quanshun Li; Y. J. Chen; T. H. Wang; Xiaoyue He; Jingjuan Li; Chuanlong Lin
Based on the achievement of synthesis of ZnO nanowires in mass production, ZnO nanowires gas sensors were fabricated with microelectromechanical system technology and ethanol-sensing characteristics were investigated. The sensor exhibited high sensitivity and fast response to ethanol gas at a work temperature of 300 °C. Our results demonstrate the potential application of ZnO nanowires for fabricating highly sensitive gas sensors.
Nano Letters | 2012
Baojie Feng; Zijing Ding; Sheng Meng; Yugui Yao; Xiaoyue He; Peng Cheng; Lan Chen; Kehui Wu
In the search for evidence of silicene, a two-dimensional honeycomb lattice of silicon, it is important to obtain a complete picture for the evolution of Si structures on Ag(111), which is believed to be the most suitable substrate for growth of silicene so far. In this work we report the finding and evolution of several monolayer superstructures of silicon on Ag(111), depending on the coverage and temperature. Combined with first-principles calculations, the detailed structures of these phases have been illuminated. These structures were found to share common building blocks of silicon rings, and they evolve from a fragment of silicene to a complete monolayer silicene and multilayer silicene. Our results elucidate how silicene forms on Ag(111) surface and provides methods to synthesize high-quality and large-scale silicene.
Physical Review Letters | 2012
Lan Chen; Cheng-Cheng Liu; Baojie Feng; Xiaoyue He; Peng Cheng; Zijing Ding; Sheng Meng; Yugui Yao; Kehui Wu
Silicene, a sheet of silicon atoms in a honeycomb lattice, was proposed to be a new Dirac-type electron system similar to graphene. We performed scanning tunneling microscopy and spectroscopy studies on the atomic and electronic properties of silicene on Ag(111). An unexpected √3 × √3 reconstruction was found, which is explained by an extra-buckling model. Pronounced quasiparticle interferences (QPI) patterns, originating from both the intervalley and intravalley scatter, were observed. From the QPI patterns we derived a linear energy-momentum dispersion and a large Fermi velocity, which prove the existence of Dirac fermions in silicene.
Applied Physics Letters | 2004
Qing Wan; Q. Li; Y. J. Chen; T. H. Wang; Xiaoyue He; X. Gao; Jingjuan Li
Cd-doped ZnO nanowires in mass production were synthesized by evaporating metal zinc (Zn) and cadmium (Cd) at 900 °C. Devices using the synthesized nanowires were fabricated on microstructured substrates. Cd-doped ZnO nanowires show a clear positive temperature coefficient of resistance effect, which is quite abnormal as compared to pure ZnO nanowires. At room temperature, resistance change of more than three orders of magnitude was measured when Cd-doped ZnO nanowire device was exposed to a moisture pulse of 95% relative humidity.
Applied Physics Letters | 2012
Xiaoyue He; Tong Guan; Xiuxia Wang; Baojie Feng; Peng Cheng; Lan Chen; Yongqing Li; Kehui Wu
Atomically smooth, single crystalline (Bi1−xSbx)2Te3 films have been grown on SrTiO3(111) substrates by molecular beam epitaxy. A full range of Sb-Bi compositions have been studied in order to obtain the lowest possible bulk conductivity. For the samples with optimized Sb compositions (x=0.5±0.1), the carrier type can be tuned from n-type to p-type across the whole thickness with the help of a back-gate. Linear magnetoresistance has been observed at gate voltages close to the maximum in the longitudinal resistance of a (Bi0.5Sb0.5)2Te3 sample. These highly tunable (Bi1−xSbx)2Te3 thin films provide an excellent platform to explore the intrinsic transport properties of the three-dimensional topological insulators.
arXiv: Materials Science | 2015
Christoph Kastl; Paul Seifert; Xiaoyue He; Kehui Wu; Yongqing Li; Alexander W. Holleitner
We investigate the photocurrent properties of the topological insulator (Bi
Scientific Reports | 2015
Xiaoyue He; Hui Li; Lan Chen; Kehui Wu
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Journal of Applied Physics | 2012
Baojie Feng; Huajun Qin; Jiehui He; Xiaoyue He; Peng Cheng; Lan Chen; Kehui Wu
Sb
Advanced Functional Materials | 2011
Guanhua Zhang; Huajun Qin; Jun Chen; Xiaoyue He; Li Lu; Yongqing Li; Kehui Wu
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Physical Review Letters | 1995
Liquan Chen; Cheng-Cheng Liu; Baojie Feng; Xiaoyue He; Peng Cheng; Zijing Ding; Sheng Meng; Yugui Yao; Kehui Wu
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