Xilian Sun
Chinese Academy of Sciences
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Publication
Featured researches published by Xilian Sun.
Journal of Physics D | 2012
Wangying Xu; Mingzhi Dai; Lingyan Liang; Zhimin Liu; Xilian Sun; Qing Wan; Hongtao Cao
InZnO thin-film transistors using high-κ Ta2O5 gate dielectric are presented and analysed. The large capacitance coupling effect of amorphous Ta2O5 results in fabricated devices with good electrical properties. However, an anomalous negative threshold voltage (Vth) shift under positive bias stress is observed. It is suggested that electron detrapping from the high-κ Ta2O5 dielectric to the gate electrode is responsible for this Vth shift, which is supported both by the logarithmical dependence of the Vth change on the duration of the bias stress and device simulation extracted trapped charges involved.
Journal of Physics D | 2008
Hui Wang; D. S. Jiang; Liuheng Wang; Xilian Sun; Wenwei Liu; D. G. Zhao; J.J. Zhu; Z. S. Liu; Yuren Wang; Siriguleng Zhang; Hui Yang
This work presents a study of the correlation between the electrical properties and the structural defects in nominally undoped InN films. It is found that the density of edge-type threading dislocations (TDs) considerably affects the electron concentration and mobility in InN films. The Hall-effect measured electron concentration increases, while the Hall mobility decreases with the increase in the edge-type TD density. With the combination of secondary ion mass spectrometry and positron annihilation analysis, we suggest that donor-type point defects at the edge-type TD lines may serve as dominant donors in InN films and affect the carrier mobility.
Nature Physics | 2017
Yingying Peng; G. Dellea; M. Minola; M. Conni; A. Amorese; D. Di Castro; G. M. De Luca; K. Kummer; M. Salluzzo; Xilian Sun; X. J. Zhou; G. Balestrino; M. Le Tacon; B. Keimer; L. Braicovich; N. B. Brookes; G. Ghiringhelli
A detailed resonant inelastic X-ray scattering (RIXS) study of a series of well-known cuprate superconductors reveals a correlation between the number of apical oxygens in these systems, and the strength of their in-plane exchange interaction.
Physical Review B | 2016
Yingying Peng; M. Salluzzo; Xilian Sun; A. Ponti; D. Betto; A. M. Ferretti; Francesco Fumagalli; K. Kummer; M. Le Tacon; X. J. Zhou; N. B. Brookes; L. Braicovich; G. Ghiringhelli
Charge order in underdoped and optimally doped high-
Physical Review Letters | 2017
M. Minola; Y. Lu; Yingying Peng; G. Dellea; H. Gretarsson; M. W. Haverkort; Yunjie Ding; Xilian Sun; X. J. Zhou; D. C. Peets; L. Chauviere; P. Dosanjh; D. A. Bonn; R. Liang; A. Damascelli; M. Dantz; X. Lu; Thorsten Schmitt; L. Braicovich; G. Ghiringhelli; B. Keimer; M. Le Tacon
T_\mathrm{c}
Journal of Physics D | 2011
Zhimin Liu; Lingyan Liang; Zheng Yu; Shikun He; Xiaojuan Ye; Xilian Sun; Aihua Sun; Hongtao Cao
superconductors Bi
Journal of Magnetism and Magnetic Materials | 2004
C.Y. You; Xilian Sun; L.Y. Xiong; W. Liu; Bao-zhi Cui; X. G. Zhao; D. Y. Geng; Z. D. Zhang
_{2}
Journal of Alloys and Compounds | 2004
M. Zhang; Z. D. Zhang; Xilian Sun; W. Liu; D. Y. Geng; X. G. Zhao; X.M. Jin
Sr
Journal of Physics D | 2003
Cai-yin You; ChoongJin Yang; Zhidong Zhang; JongSoo Han; W. Liu; Xilian Sun
_{2-x}
Applied Surface Science | 2009
Xilian Sun; Hongtao Cao; Zhimin Liu; Jianzhong Li
La