Xinglai Zhang

Giant UV photoresponse of a GaN nanowire photodetector through effective Pt nanoparticle coupling

High performance ultraviolet (UV) photodetectors based on semiconducting nanowires are expected to have extensive applications in UV-ray detection, optical communication and environmental monitoring. In this work, GaN nanowire photodetectors have been fabricated and giant UV photoresponse has been achieved with Pt nanoparticle (NP) modification. The peak responsivity and external quantum efficiency (EQE) of the GaN nanowire UV photodetector were increased from 773 to 6.39 × 104 A W−1 and from 2.71 × 105% to 2.24 × 107%, respectively, and the response time and sensitivity were improved greatly after Pt NP decoration on the GaN nanowire surface. Moreover, the Pt–GaN nanowire photodetector still presents its spectrum selectivity in the UV region. Our results reveal that Pt nanoparticles play a key role in enhancing the photodetection performance of the nanodevice due to the strong absorption and scattering of incident light induced by localized surface plasmon resonance (LSPR) and the improvement of interfacial charge separation owing to the special device configuration. These findings offer an efficient avenue toward the performance enhancement of GaN nanowire and related optoelectronic devices or systems.

Ultrasensitive and Highly Selective Photodetections of UV-A Rays Based on Individual Bicrystalline GaN Nanowire.

The detection of UV-A rays (wavelength of 320-400 nm) using functional semiconductor nanostructures is of great importance in either fundamental research or technological applications. In this work, we report the catalytic synthesis of peculiar bicrystalline GaN nanowires and their utilization for building high-performance optoelectronic nanodevices. The as-prepared UV-A photodetector based on individual bicrystalline GaN nanowire demonstrates a fast photoresponse time (144 ms), a high wavelength selectivity (UV-A light response only), an ultrahigh photoresponsivity of 1.74 × 107 A/W and EQE of 6.08 × 109%, a sensitivity of 2 × 104%, and a very large on/off ratio of more than two orders, as well as robust photocurrent stability (photocurrent fluctuation of less than 7% among 4000 s), showing predominant advantages in comparison with other peer semiconductor photodetectors. The outstanding optoelectronic performance of the bicrystalline GaN nanowire UV-A photodetector is further analyzed based on a detailed high-resolution transmission electron microscope (HRTEM) study, and the two separated crystal domains within the GaN nanowires are believed to provide separated and rapid carrier transfer channels. This work paves a solid way toward the integration of high-performance optoelectronic nanodevices based on bicrystalline or horizontally aligned one-dimensional semiconductor nanostructures.

New strategy for the in situ synthesis of single-crystalline MnWO4/TiO2 photocatalysts for efficient and cyclic photodegradation of organic pollutants

MnWO4 nano photocatalysts with plate shapes and in high yields are in situ synthesized on the surface of a porous TiO2 film by the conventional plasma electrolytic oxidation (PEO) method combined with a subsequent ambient annealing process. Transmission electron microscopy (TEM) analysis shows that the MnWO4 nano photocatalysts are single crystals free of structural defects and scanning electron microscopy (SEM) observation on the cross-section reveals that these MnWO4 nano photocatalysts are in situ grown on the porous TiO2 film surface with strong adhesion. The morphology and dimension size can be selectively tailored through controlling the reaction time, showing the simplicity and versatility of the proposed method. In addition, the photodegradation of methylene blue (MB) solution using the MnWO4/TiO2 photocatalysts demonstrated the superior photocatalytic performance with high efficiency and excellent photostability. A high photodegradation rate of MB solution of over 90% in 60 min has been achieved and a superior cyclic capability is also obtained. The superior photocatalytic performance of MnWO4/TiO2 photocatalysts can be mainly attributed to the good crystallinity, all-surface covering and strong mechanical properties of the MnWO4 nanostructures with TiO2 film. The prevailing advantage of the PEO method in combination with the ambient annealing process will open up more opportunity for the rational synthesis of a wide range of oxide photocatalysts ranging from tungstate to titanate, molybdate and vanadate for promising catalytic applications in diverse fields.

Template Approach to Crystalline GaN Nanosheets

Crystalline GaN nanosheets hold great challenge in growth and promising application in optoelectronic nanodevices. In this work, we reported an accessible template approach toward the rational synthesis of GaN nanosheets through the nitridation of metastable γ-Ga2O3 nanosheets synthesized from a hydrothermal reaction. The cubic γ-Ga2O3 nanosheets with smooth surface and decent crystallinity can be directly converted into hexagonal GaN nanosheets with similar morphology framework and comparable crystal quality in NH3 at 850 °C. UV-vis spectrum measurement reveals that the GaN nanosheets show a band gap of 3.30 eV with strong visible absorption in the range of 370-500 nm. The template synthetic strategy proposed in this work will open up more opportunities for the achievement of a variety of sheetlike nanostructures that can not be obtained through conventional routines and will undoubtedly further promote the fundamental research of newly emerging sheetlike nanostructures and nanotechnology.

Layered crystalline ZnIn2S4 nanosheets: CVD synthesis and photo-electrochemical properties

Two-dimensional semiconductors with layer thicknesses of a few nanometers to tens of nanometers have attracted tremendous research interest due to their fascinating electrical, optical, and optoelectronic properties and technologically important applications. In this work, two dimensional ternary ZnIn2S4 nanosheets which self-assemble into microflowers have been synthesized through a feasible chemical vapour deposition process. High-resolution transmission electron microscope (HRTEM) analysis reveals that the ZnIn2S4 nanostructure exhibits an extremely high phase purity and a single crystal nature free of dislocations, stacking faults or twins. UV-visible diffuse reflection measurements and room-temperature photoluminescence characterizations reveal that the ZnIn2S4 nanosheets have a strong visible absorption in the range of the energy band gap of 2.6 eV and a wide luminescence band covering the visible spectrum from the green to infrared regions. Photo-electrochemical tests using the ZnIn2S4 nanosheets as a photoanode suggest that ZnIn2S4 nanosheets have a sensitive photoresponse to irradiation with visible light and can thus be used for clean energy harvesting.

Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications

The innovation of band-gap engineering in advanced materials caused by the alloying of different semiconductors into solid-solution nanostructures provides numerous opportunities and advantages in optoelectronic property tailoring. The semiconductor solid-solution nanostructures have multifarious emission wavelength, adjustability of absorption edge, tunable electrical resistivity, and cutting-edge photoredox capability, and these advantages can be rationalized by the assorted synthesis strategies such as, binary, ternary, and quaternary solid-solutions. In addition, the abundance of elements in groups IIB, IIIA, VA, VIA, and VIIA provides sufficient room to tailor-make the semiconductor solid-solution nanostructures with the desired properties. Recent progress of semiconductor solid-solution nanostructures including synthesis strategies, structure and composition design, band-gap engineering related to the optical and electrical properties, and their applications in different fields is comprehensively reviewed. The classification, formation principle, synthesis routes, and the advantage of semiconductor solid-solution nanostructures are systematically reviewed. Moreover, the challenges faced in this area and the future prospects are discussed. By combining the information together, it is strongly anticipated that this Review may shed new light on understanding semiconductor solid-solution nanostructures while expected to have continuous breakthroughs in band-gap engineering and advanced optoelectronic nanodevices.

Composition and Band Gap Tailoring of Crystalline (GaN)1–x(ZnO)x Solid Solution Nanowires for Enhanced Photoelectrochemical Performance

Photoelectrochemical water splitting has emerged as an effective artificial photosynthesis technology to generate clean energy of H2 from sunlight. The core issue in this reaction system is to develop a highly efficient photoanode with a large fraction of solar light absorption and greater active surface area. In this work, we take advantage of energy band engineering to synthesize (GaN)1- x(ZnO) x solid solution nanowires with ZnO contents ranging from 10.3% to 47.6% and corresponding band gap tailoring from 3.08 to 2.77 eV on the basis of the Au-assisted VLS mechanism. The morphology of nanowires directly grown on the conductive substrate facilitates the charge transfer and simultaneously improves the surface reaction sites. As a result, a photocurrent approximately 10 times larger than that for a conventional powder-based photoanode is obtained, which indicates the potential of (GaN)1- x(ZnO) x nanowires in the preparation of superior photoanodes for enhanced water splitting. It is anticipated that the water-splitting capability of (GaN)1- x(ZnO) x nanowire can be further increased through alignment control for enhanced visible light absorption and reduction of charge transfer resistance.