Xingli Wang

Vertical and in-plane heterostructures from WS2/MoS2 monolayers

Layer-by-layer stacking or lateral interfacing of atomic monolayers has opened up unprecedented opportunities to engineer two-dimensional heteromaterials. Fabrication of such artificial heterostructures with atomically clean and sharp interfaces, however, is challenging. Here, we report a one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS2/MoS2 via control of the growth temperature. Vertically stacked bilayers with WS2 epitaxially grown on top of the MoS2 monolayer are formed with preferred stacking order at high temperature. A strong interlayer excitonic transition is observed due to the type II band alignment and to the clean interface of these bilayers. Vapour growth at low temperature, on the other hand, leads to lateral epitaxy of WS2 on MoS2 edges, creating seamless and atomically sharp in-plane heterostructures that generate strong localized photoluminescence enhancement and intrinsic p-n junctions. The fabrication of heterostructures from monolayers, using simple and scalable growth, paves the way for the creation of unprecedented two-dimensional materials with exciting properties.

Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2

Recently, two-dimensional layers of transition metal dichalcogenides, such as MoS2, WS2, MoSe2, and WSe2, have attracted much attention for their potential applications in electronic and optoelectronic devices. The selenide analogues of MoS2 and WS2 have smaller band gaps and higher electron mobilities, making them more appropriate for practical devices. However, reports on scalable growth of high quality transition metal diselenide layers and studies of their properties have been limited. Here, we demonstrate the chemical vapor deposition (CVD) growth of uniform MoSe2 monolayers under ambient pressure, resulting in large single crystalline islands. The photoluminescence intensity and peak position indicates a direct band gap of 1.5 eV for the MoSe2 monolayers. A back-gated field effect transistor based on MoSe2 monolayer shows n-type channel behavior with average mobility of 50 cm(2) V(-1) s(-1), a value much higher than the 4-20 cm(2) V(-1) s(-1) reported for vapor phase grown MoS2.

All Metal Nitrides Solid‐State Asymmetric Supercapacitors

Two metal nitrides, TiN porous layers and Fe2 N nanoparticles, are grown uniformly with the assistance of atomic layer deposition on vertically aligned graphene nanosheets and used as the cathode and anode for solid-state supercapacitors, respectively. Full cells are constructed and show good flexibility, high-rate capability, and 98% capacitance retention after 20,000 cycles.

High-Performance Microsupercapacitors Based on Two-Dimensional Graphene/Manganese Dioxide/Silver Nanowire Ternary Hybrid Film

Microsupercapacitors (MSCs), as one type of significant power source or energy storage unit in microelectronic devices, have attracted more and more attention. However, how to reasonably design electrode structures and exploit the active materials to endow the MSCs with excellent performances in a limited surface area still remains a challenge. Here, a reduced graphene oxide (RGO)/manganese dioxide (MnO2)/silver nanowire (AgNW) ternary hybrid film (RGMA ternary hybrid film) is successfully fabricated by a facile vacuum filtration and subsequent thermal reduction, and is used directly as a binder-free electrode for MSCs. Additionally, a flexible, transparent, all-solid state RMGA-MSC is also built, and its electrochemical performance in an ionic liquid gel electrolyte are investigated in depth. Notably, the RGMA-MSCs display superior electrochemical properties, including exceptionally high rate capability (up to 50000 mV·s(-1)), high frequency response (very short corresponding time constant τ0 = 0.14 ms), and excellent cycle stability (90.3% of the initial capacitance after 6000 cycles in ionic liquid gel electrolyte). Importantly, the electrochemical performance of RGMA-MSCs shows a strong dependence on the geometric parameters including the interspace between adjacent fingers and the width of the finger of MSCs. These encouraging results may not only provide important references for the design and fabrication of high-performance MSCs, but also make the RGMA ternary hybrid film promising for the next generation film lithium ion batteries and other energy storage devices.

In situ fabrication of three-dimensional, ultrathin graphite/carbon nanotube/NiO composite as binder-free electrode for high-performance energy storage

Metal oxides have attracted considerable attention as promising electrode materials for energy storage, but the use of metal oxides for electrodes still faces challenges such as attaining high capacity, good cycle stability, and high-rated performance. Therefore, rational design of electrode architectures and assembling metal oxides into desired structures to further enhance electrochemical performance is necessary. Here, novel 3D electrode architectures consisting of 3D ultra-thin graphite film (UGF)/carbon nanotubes (CNTs) uniformly covered by NiO nanosheets are successfully constructed by a chemical vapor deposition and subsequent electrodeposition, which are directly used as bind-free electrodes for supercapacitors and Li-ion batteries. In such composite structures, 3D UGF/CNTs serve as substrates for NiO nanosheet decoration, and act as spacers to stabilize the composite structure, making the active surfaces of NiO nanosheets accessible for electrolyte penetration and accommodating volume changes during charge/discharge processes. As expected, 3D UGF/CNTs/NiO as electrode material for supercapacitors showed high specific capacitance (750.8 F g−1 at current density of 1 A g−1), superior rate performance (capacitance of 575.6 F g−1 at 10 A g−1) and excellent cycle stability (no decay after 3000 cycles). Moreover, the 3D CNTs/UGF/NiO composite also exhibited enhanced lithium storage properties as anode materials for Li-ion batteries.

Ultrafast‐Charging Supercapacitors Based on Corn‐Like Titanium Nitride Nanostructures

Ultrahigh rates realized by ALD‐made TiN. The symmetric full‐cell supercapacitors deliver a typical capacitance of 20.7 F cm−3 at a scan rate of 1 V s−1, and retain 4.3 F cm−3 at high rate of 100 V s−1. The devices can be charged and discharged for 20 000 cycles with negligible capacitance loss and with an ultralow self‐discharge current (≈1 μA).

Chemical Vapor Deposition of High-Quality and Atomically Layered ReS2

Recently, anisotropic 2D materials, such as black phosphorus and rhenium disulfides (ReS2 ), have attracted a lot attention because of their unique applications on electronics and optoelectronics. In this work, the direct growth of high-quality ReS2 atomic layers and nanoribbons has been demonstrated by using chemical vapor deposition (CVD) method. A possible growth mechanism is proposed according to the controlled experiments. The CVD ReS2-based filed-effect transistors (FETs) show n-type semiconducting behavior with a current on/off ratio of ≈10(6) and a charge carrier mobility of ≈9.3 cm(2) Vs(-1). These results suggested that the quality of CVD grown ReS2 is comparable to mechanically exfoliated ReS2, which is also further supported by atomic force microscopy imaging, high-resolution transmission electron microscopy imaging and thickness-dependent Raman spectra. The study here indicates that CVD grown ReS2 may pave the way for the large-scale fabrication of ReS2-based high-performance optoelectronic devices, such as anisotropic FETs and polarization detection.

Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light–Matter Interactions

High-quality organic and inorganic van der Waals (vdW) solids are realized using methylammonium lead halide (CH3 NH3 PbI3 ) as the organic part (organic perovskite) and 2D inorganic monolayers as counterparts. By stacking on various 2D monolayers, the vdW solids exhibit dramatically different light emissions. Futhermore, organic/h-BN vdW solid arrays are patterned for red-light emission.

Stacking-Dependent Interlayer Coupling in Trilayer MoS2 with Broken Inversion Symmetry

The stacking configuration in few-layer two-dimensional (2D) materials results in different structural symmetries and layer-to-layer interactions, and hence it provides a very useful parameter for tuning their electronic properties. For example, ABA-stacking trilayer graphene remains semimetallic similar to that of monolayer, while ABC-stacking is predicted to be a tunable band gap semiconductor under an external electric field. Such stacking dependence resulting from many-body interactions has recently been the focus of intense research activities. Here we demonstrate that few-layer MoS2 samples grown by chemical vapor deposition with different stacking configurations (AA, AB for bilayer; AAB, ABB, ABA, AAA for trilayer) exhibit distinct coupling phenomena in both photoluminescence and Raman spectra. By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) vibrations. Our ab initio calculations reveal that the layer-dependent properties arise from both the spin-orbit coupling (SOC) and interlayer coupling in different structural symmetries. Such detailed understanding provides useful guidance for future spintronics fabrication using various stacked few-layer MoS2 blocks.

Paper-based all-solid-state flexible micro-supercapacitors with ultra-high rate and rapid frequency response capabilities

Paper-based flexible supercapacitors (SCs) have attracted great attention as they enable the realization of next-generation bendable, light-weight, and environmentally-friendly portable electronics. However, conventional paper-based SCs adopt a sandwich-like structure suffering from poor rate performance, slow frequency response and difficulty in direct integration with other micro-devices. We report here for the first time paper-based all-solid-state flexible planar micro-supercapacitors (MSCs) using poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-CNT/Ag as the electrode material by the inkjet printing technique. The as-fabricated paper-based all-solid-state flexible MSCs deliver the best rate capability among all reported paper-based MSCs/SCs (up to 10 000 mV s−1), fast frequency response (relaxation time constant τ0 = 8.5 ms), high volumetric specific capacitance (23.6 F cm−3) and long cycle stability (92% capacitance retention after 10 000 cycles), which shows a strong dependence on the film thickness and the interdigitated spacing between neighbouring fingers, respectively. Furthermore, the series and parallel connections reveal that the as-prepared paper-based MSCs obey the basic theorem of series and parallel connections of capacitors, respectively. The combination of the simple fabrication technology and excellent performances presented here not only make paper-based all-solid-state flexible MSCs an attractive candidate for powering future flexible portable electronics, but also provide important references for the design and fabrication of other high-performance flexible energy storage devices.