Xinjiang Wang

First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS

Tin selenide (SnSe) and tin sulfide (SnS) have recently attracted particular interest due to their great potential for large-scale thermoelectric applications. A complete prediction of the thermoelectric performance and the understanding of underlying heat and charge transport details are the key to further improvement of their thermoelectric efficiency. We conduct comprehensive investigations of both thermal and electrical transport properties of SnSe and SnS using first-principles calculations combined with the Boltzmann transport theory. Due to the distinct layered lattice structure, SnSe and SnS exhibit similarly anisotropic thermal and electrical behaviors. The cross-plane lattice thermal conductivity

Computational Study of In-Plane Phonon Transport in Si Thin Films

{\ensuremath{\kappa}}_{L}

Thermal conductivity of skutterudite CoSb3 from first principles: Substitution and nanoengineering effects

is

Thermal conductivity of graphene mediated by strain and size

40--60%

Bistable characteristic and current jumps in field electron emission of nanocrystalline diamond films

lower than the in-plane values. Extremely low

Resonance and antiresonance effects in electronic transport through several-quantum-dot combinations

{\ensuremath{\kappa}}_{L}

Solid-State Semiconductor Optical Cryocooler Based on CdS Nanobelts

is found for both materials because of high anharmonicity, while the average

Negative differential resistance and tunable peak-to-valley ratios in a silicon nanochain

{\ensuremath{\kappa}}_{L}

Effects of point defects and dislocations on spectral phonon transport properties of wurtzite GaN

of SnS is

Characterization of Thermal Resistances Across CVD-Grown Graphene/Al2O3 and Graphene/Metal Interfaces Using Differential 3-Omega Technique

\ensuremath{\sim}8%