Xinman Chen

Quantum conductance in MoS2 quantum dots-based nonvolatile resistive memory device

In this work, nonvolatile bipolar resistive switching behaviors based on the MoS2 quantum dots (QDs) embedded in the insulating polymethylmethacrylate (PMMA) were reported with the device configuration of Au/PMMA/PMMA:MoS2 QDs/PMMA/fluorine doped tin-oxide. The device exhibits the reversible switching performances with the excellent read endurance and data retention capability. The related carrier transport behaviors were predominated by Schottky emission and Ohmic conductions in OFF and ON states, respectively. Importantly, a conductance quantization effect was evidently observed in this MoS2 QD-based memory device. Combined with the energy band evolution, these phenomena were elucidated in views of electrons trapping/de-trapping and quantum tunneling effects of nanoscale MoS2 QDs. This work also suggests the potential application of MoS2 QDs in next generation ultra-high-density data storage.

Write-Once-Read-Many-Times and Bipolar Resistive Switching Characteristics of TiN/HfO 2 /Pt Devices Dependent on the Electroforming Polarity

In this letter, we report the dependence of memory characteristics on electroforming polarity based on TiN/HfO2/Pt devices. Bipolar resistive switching (BRS) and write-once-read-many-times memory (WORM) behaviors were obtained after the negative and positive electroforming process, respectively. Analysis of conduction mechanisms of high resistance state confirms that BRS and WORM were dominated by Schottky emission and trap-controlled space charge limited current, respectively. These phenomena can be explained by the filamentary model with the assistance of interfacial role. Moreover, this letter also indicates that the TiN/HfO2/Pt devices have promising application in both RRAM and non-editable WORM.