Xiubo Qin

Positron Beam Characterization of Silica Thin Films with Structurally Ordered Porosity

Well-ordered 2-dimensional (2D) hexagonal and 3-dimensional (3D) cubic mesoporous silicon oxide thin films prepared using triblock Poly(ethylene oxide)-Poly(Propylene oxide)-Poly(ethylene oxide) copolymer species (P123, F127) as the structure-directing agents, are studied by positron beam analysis in parallel with X-ray reflection measurements. It is observed that in the two films with equivalent porosity and pore size (normal to the film surface direction), the shape of mesopores considerably affects positron annihilation behavior. The narrowed positron annihilation Doppler broadening in the 2D hexagonal mesoporous film may suggest a higher positronium formation probability there, owing to a larger effective open volume area originated from the extension of pore channels parallel to the film substrate.

Direct preparation and microstructure investigation of p -type transparent conducting Ga-doped SnO 2 thin films

Transparent p -type conducting Ga-doped SnO 2 thin films were prepared using reactive rf-magnetron sputtering. Good p -type conduction was directly realized without the need of postdeposition annealing. The p -type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films.