Xu Yadong

Defects in CdMnTe crystals for nuclear detector applications

A laser scanning confocal microscope (LSCM) and a field-emission scanning electron microscope (FE-SEM) were used to study the defects in CdMnTe crystals, such as twin boundaries, Te inclusions, and dislocations. Twin boundaries were usually decorated with Te inclusions, which could induce dislocations. The optical, electrical properties and detector performance of CdMnTe crystals with twins and free of twins were compared. The results showed that the wafers with a high density of twins usually had lower average IR transmittance and poorer crystalline quality. Besides, the energy spectra indicated that twin boundaries in a CdMnTe detector had a negative effect on detector performance; the values of both the energy resolution and (μτ)e were nearly half of those for a single crystal detector.

Effect of de-trapping on carrier transport process in semi-insulating CdZnTe*

The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole–Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/Vs and the corresponding electron mobility-lifetime product is found to be 1.32×10−3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.

Charge transport performance of high resistivity CdZnTe crystals doped with In/Al

To evaluate the charge transport properties of as-grown high resistivity CdZnTe crystals doped with In/Al, the α particle spectroscopic response was measured using an un-collimated 241Am (5.48 MeV) radioactive source at room temperature. The electron mobility lifetime products (μτ)e of the CdZnTe crystals were predicted by fitting plots of photo-peak position versus electrical field strength using the single carrier Hecht equation. A TOF technique was employed to evaluate the electron mobility for CdZnTe crystals. The mobility was obtained by fitting the electron drift velocities as a function of the electrical field strengths, where the drift velocities were achieved by analyzing the rise-time distributions of the voltage pulses formed by a preamplifier. A fabricated CdZnTe planar detector based on a low In concentration doped CdZnTe crystal with (μτ)e = 2.3 × 10−3 cm2/V and μe = 1000 cm2/(V s), respectively, exhibits an excellent γ-ray spectral resolution of 6.4% (FWHM = 3.8 keV) for an un-collimated 241Am @ 59.54 keV isotope.