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Featured researches published by Xue-Jin Zhang.


Nano Letters | 2013

Ordered Ag/Si Nanowires Array: Wide-Range Surface-Enhanced Raman Spectroscopy for Reproducible Biomolecule Detection

Jian-An Huang; Yingqi Zhao; Xue-Jin Zhang; Lifang He; Tailun Wong; Ying-San Chui; Wenjun Zhang; Shuit-Tong Lee

Surface-enhanced Raman scattering (SERS) systems utilizing the interparticle nanogaps as hot spots have demonstrated ultrasensitive single-molecule detection with excellent selectivity yet the electric fields are too confined in the small nanogaps to enable reproducible biomolecule detections. Here, guided by finite-difference-time-domain simulation, we report hexagonal-packed silver-coated silicon nanowire (Ag/SiNW) arrays as a nanogap-free SERS system with wide-range electric fields and controlled interwire separation. Significantly, the system achieves a SERS detection of long double-strand DNA of 25-50 nm in length with a relative standard deviation (RSD) of 14% for measurements of above 4000 spots over an area of 200 × 200 μm(2). The high reproducibility in the SERS detection is attributed to (1) the large interwire spacing of 150 nm that allows access and excitation of large biomolecules; and (2) 600 nm wide-range electric field generated by propagating surface plasmons along the surface of continuous Ag coating on a SiNW. Moreover, a reproducible multiplex SERS measurement is also demonstrated with RSDs of 7-16% with an enhancement factor of ~10(6). The above results show that the ordered Ag/SiNW array system may serve as an excellent SERS platform for practical chemical and biological detection.


Nano Letters | 2009

Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires

Pingjian Li; Zhi-Min Liao; Xinzheng Zhang; Xue-Jin Zhang; Huichao Zhu; Jingyun Gao; K. Laurent; Yamin Leprince-Wang; Ning Wang; Dapeng Yu

The single-crystal n-type and p-type ZnO nanowires (NWs) were synthesized via a chemical vapor deposition method, where phosphorus pentoxide was used as the dopant source. The electrical and photoluminescence studies reveal that phosphorus-doped ZnO NWs (ZnO:P NWs) can be changed from n-type to p-type with increasing P concentration. Furthermore, we report for the first time the formation of an intramolecular p-n homojunction in a single ZnO:P NW. The p-n junction diode has a high on/off current ratio of 2.5 x 10(3) and a low forward turn-on voltage of approximately 1.37 V. Finally, the photoresponse properties of the diode were investigated under UV (325 nm) excitation in air at room temperature. The high photocurrent/dark current ratio (3.2 x 10(4)) reveals that the diode has a potential as extreme sensitive UV photodetectors.


ACS Nano | 2010

Tunable Electrical Properties of Silicon Nanowires via Surface-Ambient Chemistry

Guodong Yuan; Yixiao Zhou; C. S. Guo; Wenjun Zhang; Yongbing Tang; Yanyong Li; Z. H. Chen; Zhubing He; Xue-Jin Zhang; Pengfei Wang; I. Bello; R. Q. Zhang; Chun-Sing Lee; Shuit-Tong Lee

p-Type surface conductivity is a uniquely important property of hydrogen-terminated diamond surfaces. In this work, we report similar surface-dominated electrical properties in silicon nanowires (SiNWs). Significantly, we demonstrate tunable and reversible transition of p(+)-p-i-n-n(+) conductance in nominally intrinsic SiNWs via changing surface conditions, in sharp contrast to the only p-type conduction observed on diamond surfaces. On the basis of Si band energies and the electrochemical potentials of the ambient (pH value)-determined adsorbed aqueous layer, we propose an electron-transfer-dominated surface doping model, which can satisfactorily explain both diamond and silicon surface conductivity. The totality of our observations suggests that nanomaterials can be described as a core-shell structure due to their large surface-to-volume ratio. Consequently, controlling the surface or shell in the core-shell model represents a universal way to tune the properties of nanostructures, such as via surface-transfer doping, and is crucial for the development of nanostructure-based devices.


Applied Physics Letters | 2004

Combinatorial studies of (1−x)Na0.5Bi0.5TiO3−xBaTiO3 thin-film chips

Hong-Wei Cheng; Xue-Jin Zhang; Shan-Tao Zhang; Yan Feng; Yan-Feng Chen; Zhiguo Liu; Guang-Xi Cheng

Applying a combinatorial methodology, (1−x)Na0.5Bi0.5TiO3−xBaTiO3 (NBT-BT) thin-film chips were fabricated on (001)-LaAlO3 substrates by pulsed laser deposition with a few quaternary masks. A series of NBT-BT library with the composition of BT ranged from 0 to 44% was obtained with uniform composition and well crystallinity. The relation between the concentration of NBT-BT and their structural and dielectric properties were investigated by x-ray diffraction (XRD), evanescent microwave probe, atomic force microscopy, and Raman spectroscopy. An obvious morphotropic phase boundary (MPB) was established to be about 9% BT by XRD, Raman frequency shift, and dielectric anomaly, different from the well-known MPB of the materials. The result shows the high efficiency of combinatorial method in searching new relaxor ferroelectrics.


Applied Physics Letters | 2009

High-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistors

Wenfeng Zhang; Zhubing He; Guodong Yuan; Jiansheng Jie; Lin-Bao Luo; Xue-Jin Zhang; Z. H. Chen; Chun-Sing Lee; Wenjun Zhang; Shuit-Tong Lee

We report the fabrication of fully transparent and flexible nanowire transistors by combining a high-quality In2O3:Zn nanowire channel, a SiNx high-κ dielectric, and conducting Sn-doped In2O3 electrodes on a polyethylene terephthalate substrate. The devices show excellent operating characteristics with high carrier mobilities up to 631 cm2 V−1 s−1, a drain-source current on/off modulation ratio ∼1×106, a high on-state current ∼1×10−5 A, a small subthreshold gate voltage swing of 120 mV decade−1, and a near zero threshold voltage. The devices further show high reproducibility and stable performance under bending condition. The high-performance nanowire transistors would enable application opportunities in flexible and transparent electronics.


ACS Nano | 2011

Metallo-dielectric photonic crystals for surface-enhanced raman scattering

Yu Zhao; Xue-Jin Zhang; Jing Ye; Li-Miao Chen; S. P. Lau; Wenjun Zhang; Shuit-Tong Lee

Metallo-dielectric photonic crystals (MDPCs) are used as ultrasensitive molecular detectors for concentrations down to picomolar level based on surface-enhanced Raman spectroscopy (SERS). Calculations show that the amorphous silicon photonic crystals (a-Si PCs) embedded in multiple metallo-dielectric (MD) units can significantly increase the electromagnetic fields at the air-dielectric interface, leading to remarkable Raman enhancement. Corresponding experiments show the multiple MDPC structures can serve as an ultrasensitive SERS substrate with excellent reproducibility and stability, capable of quantitative analysis down to 10 pM level. The MDPC structure can be generalized to other applications, such as plasmonic devices, ultrasensitive sensors, and nanophotonic systems.


Optics Express | 2010

Localized surface plasmons, surface plasmon polaritons, and their coupling in 2D metallic array for SERS

Luping Du; Xue-Jin Zhang; Ting Mei; Xiaocong Yuan

A substrate with ease for fabrication is proposed for surface enhanced Raman spectroscopy (SERS). A two-dimensional dielectric grating covered by a thin silver film enables the excitation of both localized surface plasmons (LSPs) and surface plasmon polaritons (SPPs). The finite-difference time-domain simulation results show that the coupling between LSPs and SPPs is able to highly improve the Raman enhancement (2 x 10(9) as obtained by simulation). In addition, the near-field distribution at the top of cubic bumps along the transverse plane presents a highly regular hotspots pattern, which is required for an ideal SERS substrate.


Optics Letters | 2010

Gain-assisted propagation of surface plasmon polaritons via electrically pumped quantum wells

Xue-Jin Zhang; Yicen Li; Te Li; Shuh Ying Lee; Chengang Feng; L. Wang; Ting Mei

We studied the loss compensation of surface plasmon polaritons (SPPs) with InGaAsP quantum wells at telecom wavelength. The quantum wells are buried in the vicinity of a thin Au film. The propagation length of short-range SPPs increases drastically with the gain coefficient of quantum wells, generated by a forward bias. The elongation of SPP propagation is experimentally observed via long-range SPPs, which strongly couple with the short-range SPPs. This study paves a way for electrically manipulated amplification of SPPs in plasmonic circuits.


Applied Physics Letters | 2014

Tunable Fano resonance in hybrid graphene-metal gratings

Zhao-xian Chen; Jin-hui Chen; Zi-jian Wu; Wei Hu; Xue-Jin Zhang; Yan-qing Lu

Hybrid graphene-metal gratings with tunable Fano resonance are proposed and theoretically investigated in THz band. The grating contains alternately aligned metal and graphene stripes, which could be viewed as the superposition of two kinds of gratings with the same period. Due to different material properties, the resonance coupling between the metal and graphene parts forms typical Fano-type transmitting spectra. The related physical mechanism is studied by inspecting the induced dipole moment and local surface charge distributions at different wavelengths. Both of the resonance amplitude and frequency of the structure thus are adjustable by tuning graphenes Fermi energy and the gratings geometrical parameters. Furthermore, the Fano-type spectra are also quite sensitive to environmental indices, which supply another kind of tunability. All these features should have promising applications in tunable THz filters, switches, and modulators.


Applied Physics Letters | 2008

Excitation of dielectric-loaded surface plasmon polariton observed by using near-field optical microscopy

Zheyu Fang; Xue-Jin Zhang; Dan Liu; Xing Zhu

The excitation of dielectric-loaded surface plasmon polariton (DLSPP) by a CdS nanostripe placed on a Ag layer is observed by using a scanning near-field optical microscopy (SNOM). The spectroscopic redshift of 30 meV of photoluminescence is observed at different positions of the stripe by SNOM and can be explained as the result of Franz–Keldysh effect. Finite difference time domain calculations confirm the observations of the near-field optical images and spectroscopic data. This DLSPP excitation structure is important in the implementation of photonic integrated circuits as well as the optical guiding modes in plasmonic devices.

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Wenjun Zhang

City University of Hong Kong

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Dapeng Yu

South University of Science and Technology of China

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