Xuechun Li

Aqueous-based magnetite magnetic fluids stabilized by surface small micelles of oleolysarcosine

Abstract The adsorption of N-oleoylsarcosine onto in water dispersed magnetite nanoparticles were investigated at different concentrations and pH values. The coated nanoparticles surface became hydrophobic at a molar ratio of N-oleoylsarcosine:Fe3O4 below 0.22:1 within a pH range of 5–9.5. Aqueous-based magnetic fluids could not be obtained. A hydrophilic surface was observed at a molar ratio of N-oleoylsarcosine:Fe3O4 above 0.37:1 and at pH levels ranging from 6 to 8.5. Stable aqueous-based magnetic fluids could be prepared. The magnetite particles flocculate at pH levels below 5.5 or above 8.5. The hydrophobic behavior was explained assuming a monolayer adsorption mode. On the other hand, the hydrophilic properties were caused by a bilayer adsorption structure. This hypothesis was in overestimation with results of infrared (IR) spectroscopy and photon correlation spectroscopy of the prepared magnetic fluids. The influences of pH levels on the formation of N-oleoylsarcosine micelles were also discussed to explain the pH-dependant formation of bilayer adsorption structure, i.e. surface small micelle structure. It was indicated that it became difficult for N-oleoylsarcosine adsorb at the water–air interface, or adsorb at the nanoparticles surfaces in the form of surface small micelles at pH levels above 8.5. Besides, the aqueous-based magnetic fluids were also characterized by magnetization curve determinations.

Differential resistance of GaN-based laser diodes with and without polarization effect.

In this paper, we used numerical calculation and simulation to investigate the differential resistance of GaN-based laser diodes (LDs) with and without polarization effect. We confirmed the existence of a kink at the vicinity of threshold current in the differential resistance curve of GaN-based LDs and found that the kink polarity can be reversed dependent on the polarization effect. The serial parasitic diodes should be included in the theoretical analysis of the equivalent circuit of the LD devices. We determined that the superposition effects of the n-side, active, and p-side regions of the LDs caused the kink and its polarity. We also found that the differential resistance before and after the threshold was dominated by the p-side region and its gradual reduction is related to an electron overflow into p-side. Finally, we studied the effects of cavity facet reflectivity on the kink.

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes

A series of samples with varying growth pressure are grown and their optical and structural properties are investigated. It is found that the residual carbon concentration decreases when the reactor pressure increases from 80 to 450 Torr during the InGaN/GaN multiple quantum well growth. It results in an enhanced peak intensity of electroluminescence because carbon impurities can induce deep energy levels and act as non-radiative recombination centers in InGaN layers.

Multifunctional high-performance 10-J level laser system

In this letter, we report a multifunctional high-performance Nd:glass laser system. Laser pulses from an all-fiber front end are first amplified by a regenerative amplifier to 10 mJ level, and then further amplified in a four-pass amplifier. The laser system can provide 10.3-J, 3-ns laser pulses at 1053-nm wavelength. The shot-to-shot energy stability is better than 1.5% (RMS). The output laser beam is near diffraction limit. Binary amplitude masks are used to maintain a flat top near-field profile with a 71% fill factor. After the frequency conversion process, 7 and 5.5 J pulses at 526.5 and 351 nm are obtained, respectively.

Theoretical and experimental research on cryogenic Yb:YAG regenerative amplifier

Based on the theory of quasi-three-level rate equations modified by amplified spontaneous emission, the stored energy density and the small signal gain of the cryogenic Yb:YAG regenerative amplifier for a given geometry for pulsed pumping in three dimensions are theoretically studied using the Monte Carlo simulation. The present model provides a straightforward procedure to design the Yb:YAG parameters and the optical coupling system for optimization when running at cryogenic temperature. A fiber-coupled laser diode end-pumped cryogenic Yb:YAG regenerative amplifier running at 1 030 nm is demonstrated with a maximum output energy 10.2 mJ at a repetition rate of 10 Hz. A very good agreement between the experiments and the theoretical model is achieved.

Suppression of FM-to-AM modulation by polarizing fiber front end for high-power lasers.

FM-to-AM modulation is an important effect in the front end of high-power lasers that influences the temporal profile. Various methods have been implemented in standard-fiber and polarization-maintaining (PM)-fiber front ends to suppress the FM-to-AM modulation. To analyze the modulation in the front end, a theoretical model is established and detailed simulations carried out that show that the polarizing (PZ) fiber, whose fast axis has a large loss, can successfully suppress the modulation. Moreover, the stability of the FM-to-AM modulation can be improved, which is important for the front end to obtain a stable output. To verify the model, a PZ fiber front end is constructed experimentally. The FM-to-AM modulation, without any compensation, is less than 4%, whereas that of the PM fiber front end with the same structure is nearly 20%. The stability of the FM-to-AM modulation depth is analyzed experimentally and the peak-to-peak and standard deviation (SD) are 2% and 0.38%, respectively, over 3 h. The experimental results agree with the simulation results and both prove that the PZ fiber front end can successfully suppress the FM-to-AM conversion. The PZ fiber front end is a promising alternative for improving the performance of the front end in high-power laser facilities.

Laser pulse spectral shaping based on electro-optic modulation

A new spectrum shaping method, based on electro-optic modulation, to alleviate gain narrowing in chirped pulse amplification (CPA) system, is described and numerically simulated. Near-Fourier transform-limited seed laser pulse is chirped linearly through optical stretcher. Then the chirped laser pulse is coupled into integrated waveguide electro-optic modulator driven by an aperture-coupled-stripline (ACSL) electrical-waveform generator, and the pulse shape and amplitude are shaped in time domain. Because of the direct relationship between frequency interval and time interval of the linearly chirped pulse, the laser pulse spectrum is shaped correspondingly. Spectrum-shaping examples are modeled numerically to determine the spectral resolution of this technique. The phase error introduced in this method is also discussed.

High power glass laser research progresses in NLHPLP

A new high power laser facility with 8 beams and maximum output energy of one beam 5kJ/3.4ns/3ω has been performed and operated since 2015. Combined together the existing facilities have constructed a multifunction experimental platform including multi-pulse width of ns, ps and fs and active probing beam, which is an effective tool for Inertial Confinement Fusion (ICF) and High Energy Density (HED) researches. In addition another peculiar high power laser prototype pushes 1ω maximum output energy to 16kJ in 5ns and 17.5kJ in 20ns in flat-in-time pulse, this system is based on large aperture four-pass main amplifier architecture with 310mm×310mm output beam aperture. Meanwhile the near field and far field have good quality spanning large energy scope by use of a wide range of technologies, such as reasonable overall design technique, the integrated front end, cleanness class control, nonlinear laser propagation control, wave-front adaptive optics and precision measurement. Based on this excellent backup, 3ω damage research project is planning to be implemented. To realize the above aims, the beam expanding scheme in final transport spatial filter could be adopted considering tradeoff between the efficient utilization of 1ω output and 3ω damage threshold. Besides for deeply dissecting conversion process for beam characteristic influence of 1ω beam, WCI (Wave-front Code Image) instrument with refined structure would be used to measure optical field with simultaneous high precision amplitude and phase information, and what’s more WCI can measure the 1ω, 2ω and 3ω optical field in the same time at same position, so we can analyze the 3ω beam quality evolution systematically, and ultimately to improve the 3ω limited output. In a word, we need pay attention to some aspects contents with emphasis for future huger laser facility development. The first is to focus the new technology application. The second is to solve the matching problem between 1ω beam and the 3ω beam. The last is to build the whole effective design in order to improve efficiency and cost performance.

On-shot laser beam diagnostics for high-power laser facility with phase modulation imaging

A coherent-modulation-imaging-based (CMI) algorithm has been employed for on-shot laser beam diagnostics in high-power laser facilities, where high-intensity short-pulsed lasers from terawatt to petawatt are designed to realize inertial confinement fusion (ICF). A single-shot intensity measurement is sufficient for wave-front reconstruction, both for the near-field and far-field at the same time. The iterative reconstruction process is computationally very efficient and was completed in dozens of seconds by the additional use of a GPU device to speed it up. The compact measurement unit—including a CCD and a piece of pre-characterized phase plate—makes it convenient for focal-spot intensity prediction in the target chamber. It can be placed almost anywhere in high-power laser facilities to achieve near-field wave-front diagnostics. The feasibility of the method has been demonstrated by conducting a series of experiments with diagnostic beams and seed pulses with deactivated amplifiers in our high-power laser system.

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

In order to reduce the internal optical loss of InGaNlaser diodes, an unintentionally dopedGaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.