Xuefei Wang

Visible-blind, ultraviolet-sensitive photodetector based on SrTiO3 single crystal.

High-sensitivity and visible-blind ultraviolet (UV) photoconductive detectors based on SrTiO(3) single crystal with interdigitated electrodes are reported. The responsivities of photovoltage and photocurrent can reach 2.13x10(5) V/W and 213 mA/W, respectively, at 330 nm at ambient temperature, and the corresponding quantum efficiency eta reaches 80.2%. The dark current is lower than 50 pA at 10 V bias, and the UV/visible contrast ratio is about four orders of magnitude with a sharp cutoff at 390 nm. The experimental results demonstrate that SrTiO(3) single crystal has potentially wide applications in UV detection.

Pressure-induced superconductivity in a three-dimensional topological material ZrTe5

Significance Three-dimensional (3D) Dirac semimetals have attracted a lot of advanced research recently on many exotic properties and their association with crystalline and electronic structures under extreme conditions. As one of the fundamental state parameters, high pressure is an effective, clean way to tune lattice as well as electronic states, especially in quantum states, thus their electronic and magnetic properties. In this paper, by combining multiple experimental probes (synchrotron X-ray diffraction, low-temperature transport under magnetic field) and theoretical investigations, we discover the pressure-induced 3D Dirac semimetal to superconductor transition in ZrTe5. As a new type of topological materials, ZrTe5 shows many exotic properties under extreme conditions. Using resistance and ac magnetic susceptibility measurements under high pressure, while the resistance anomaly near 128 K is completely suppressed at 6.2 GPa, a fully superconducting transition emerges. The superconducting transition temperature Tc increases with applied pressure, and reaches a maximum of 4.0 K at 14.6 GPa, followed by a slight drop but remaining almost constant value up to 68.5 GPa. At pressures above 21.2 GPa, a second superconducting phase with the maximum Tc of about 6.0 K appears and coexists with the original one to the maximum pressure studied in this work. In situ high-pressure synchrotron X-ray diffraction and Raman spectroscopy combined with theoretical calculations indicate the observed two-stage superconducting behavior is correlated to the structural phase transition from ambient Cmcm phase to high-pressure C2/m phase around 6 GPa, and to a mixture of two high-pressure phases of C2/m and P-1 above 20 GPa. The combination of structure, transport measurement, and theoretical calculations enable a complete understanding of the emerging exotic properties in 3D topological materials under extreme environments.

Pressure-Induced New Topological Weyl Semimetal Phase in TaAs

TaAs as one of the experimentally discovered topological Weyl semimetal has attracted intense interests recently. The ambient TaAs has two types of Weyl nodes which are not on the same energy level. As an effective way to tune lattice parameters and electronic interactions, high pressure is becoming a significant tool to explore new materials as well as their exotic states. Therefore, it is highly interesting to investigate the behaviors of topological Weyl fermions and possible structural phase transitions in TaAs under pressure. Here, with a combination of ab initio calculations and crystal structure prediction techniques, a new hexagonal P-6m2 phase is predicted in TaAs at pressure around 14 GPa. Surprisingly, this new phase is a topological semimetal with only single set of Weyl nodes exactly on the same energy level. The phase transition pressure from the experimental measurements, including electrical transport measurements and Raman spectroscopy, agrees with our theoretical prediction reasonably. Moreover, the P-6m2 phase seems to be quenched recoverable to ambient pressure, which increases the possibilities of further study on the exotic behaviors of single set of Weyl fermions, such as the interplay between surface states and other properties.

Solvothermal Synthesis of Lateral Heterojunction Sb2Te3/Bi2Te3 Nanoplates

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. The semiconducting temperature-resistance curve and crossjunction rectification were observed, which reveal a staggered-gap lateral heterojunction with a small junction voltage. Quantum correction from the weak antilocalization reveals the well-maintained transport of the topological surface state. This is appealing for a platform for spin filters and one-dimensional topological interface states.

Concurrence of superconductivity and structure transition in Weyl semimetal TaP under pressure

Weyl semimetal defines a material with three dimensional Dirac cones which appear in pair due to the breaking of spatial inversion or time reversal symmetry. Superconductivity is the state of quantum condensation of paired electrons. Turning a Weyl semimetal into superconducting state is very important in having some unprecedented discoveries. In this work, by doing resistive measurements on a recently recognized Weyl semimetal TaP under pressure up to about 100 GPa, we observe superconductivity at about 70 GPa. The superconductivity retains when the pressure is released. The systematic evolutions of resistivity and magnetoresistance with pressure are well interpreted by the relative shift between the chemical potential and paired Weyl points. Calculations based on the density functional theory also illustrate the structure transition at about 70GPa, the phase at higher pressure may host superconductivity. Our discovery of superconductivity in TaP by pressure will stimulate further study on superconductivity in Weyl semimetals.

Pressure-induced metallization and superconducting phase in ReS 2

Among the family of transition metal dichalcogenides, ReS2 occupies a special position, which crystalizes in a unique distorted low-symmetry structure at ambient conditions. The interlayer interaction in ReS2 is rather weak, thus its bulk properties are similar to those of monolayer. However, how compression changes its structure and electronic properties is unknown so far. Here using ab initio crystal structure searching techniques, we explore the high-pressure phase transitions of ReS2 extensively and predict two new high-pressure phases. The ambient pressure phase transforms to a “distorted-1T” structure at very low pressure and then to a tetragonal I41/amd structure at around 90 GPa. The “distorted-1T” structure undergoes a semiconductor–metal transition at around 70 GPa with a band overlap mechanism. Electron–phonon calculations suggest that the I41/amd structure is superconducting and has a critical superconducting temperature of about 2 K at 100 GPa. We further perform high-pressure electrical resistance measurements up to 102 GPa. Our experiments confirm the semiconductor–metal transition and the superconducting phase transition of ReS2 under high pressure. These experimental results are in good agreement with our theoretical predictions.High-pressure physics: transitions and superconductivity of compressed ReS 2ReS2 is a unique transition metal dichalcogenide (TMD) in terms of its distorted low-symmetry structure at ambient conditions. A subject that remains elusive so far is how its structure and electronic properties respond to pressure. Now a collaborative team led by Prof. Jian Sun from Nanjing University looks at the phase transitions in ReS2 under pressure utilizing ab initio crystal structure searching combining with high-pressure electrical resistance measurements. Upon small compression, the ambient phase transforms to a triclinic distorted 1T structure before changing to a tetragonal polymorph at higher pressure. The former transition is due to the layer sliding with a Peierls mechanism governing the energy stabilization and this semiconducting phase would be metallized with increasing pressure. The latter predicted structure is superconducting at a critical temperature of around 2 K at 100 GPa. This work suggests the role of pressure in tailoring the electronic structures of TMDs.

Pressure-induced iso-structural phase transition and metallization in WSe2

We present in situ high-pressure synchrotron X-ray diffraction (XRD) and Raman spectroscopy study, and electrical transport measurement of single crystal WSe2 in diamond anvil cells with pressures up to 54.0–62.8 GPa. The XRD and Raman results show that the phase undergoes a pressure-induced iso-structural transition via layer sliding, beginning at 28.5 GPa and not being completed up to around 60 GPa. The Raman data also reveals a dominant role of the in-plane strain over the out-of plane compression in helping achieve the transition. Consistently, the electrical transport experiments down to 1.8 K reveals a pressure-induced metallization for WSe2 through a broad pressure range of 28.2–61.7 GPa, where a mixed semiconducting and metallic feature is observed due to the coexisting low- and high-pressure structures.

Pressure-induced Td to 1T′ structural phase transition in WTe2

WTe2 is provoking immense interest owing to its extraordinary properties, such as large positive magnetoresistance, pressure-driven superconductivity and possible type-II Weyl semimetal state. Here we report results of high-pressure synchrotron X-ray diffraction (XRD), Raman and electrical transport measurements on WTe2. Both the XRD and Raman results reveal a structural transition upon compression, starting at 6.0 GPa and completing above 15.5 GPa. We have determined that the high-pressure lattice symmetry is monoclinic 1T′ with space group of P21/m. This transition is related to a lateral sliding of adjacent Te-W-Te layers and results in a collapse of the unit cell volume by ∼20.5%. The structural transition also casts a pressure range with the broadened superconducting transition, where the zero resistance disappears.

Scotch tape induced strains for structural variation of FeTe0.5Se0.5 and Fe1.05Te single crystals

We have recently reported that the superconducting transition temperature of FeTe0.5Se0.5 flakes attached onto commercial Scotch tape can be enhanced by about 1-2 K due to a thermal-mismatch induced compressive strain. In this work, we further investigated the Scotch tape effect on structural variation of FeTe0.5Se0.5 and Fe1.05Te flakes by X-ray diffraction measurements. We show that for FeTe0.5Se0.5, the lattice constant c of taped flakes is elongated by about 0.5% at 15 K as compared with bulk crystal. Upon warming from 15 K, the lattice constant c of the taped flakes first levels off then displays negative thermal expansion followed by monotonic increase at temperatures above 100 K. For antiferromagnetic Fe1.05Te, the structural transition around 70 K is remarkably broadened by about 2 K. The present results demonstrate that the Scotch tape is a simple and effective tool to probe structure sensitive physical properties of layered materials.

Topological Dirac line nodes and superconductivity coexist in SnSe at high pressure

We report on the discovery of a pressure-induced topological and superconducting phase of SnSe, a material which attracts much attention recently due to its superior thermoelectric properties. In situ high-pressure electrical transport and synchrotron x-ray diffraction measurements show that the superconductivity emerges along with the formation of a CsCl-type structural phase of SnSe above around 27 GPa, with a maximum critical temperature of 3.2 K at 39 GPa. Based on ab initio calculations, this CsCl-type SnSe is predicted to be a Dirac line-node (DLN) semimetal in the absence of spin-orbit coupling, whose DLN states are protected by the coexistence of time-reversal and inversion symmetries. These results make CsCl-type SnSe an interesting model platform with simple crystal symmetry to study the interplay of topological physics and superconductivity.