Xuepeng Qiu

Spin–orbit-torque engineering via oxygen manipulation

Spin transfer torques allow the electrical manipulation of magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to spin-orbit torques, which are a more powerful tool for controlling magnetization and can enrich device functionalities. The engineering of spin-orbit torques, based mostly on the spin Hall effect, is being intensely pursued. Here, we report that the oxidation of spin-orbit-torque devices triggers a new mechanism of spin-orbit torque, which is about two times stronger than that based on the spin Hall effect. We thus introduce a way to engineer spin-orbit torques via oxygen manipulation. Combined with electrical gating of the oxygen level, our findings may also pave the way towards reconfigurable logic devices.

Angular and temperature dependence of current induced spin-orbit effective fields in Ta/CoFeB/MgO nanowires.

Current induced spin-orbit effective magnetic fields in metal/ferromagnet/oxide trilayers provide a new way to manipulate the magnetization, which is an alternative to the conventional current induced spin transfer torque arising from noncollinear magnetization. Ta/CoFeB/MgO structures are expected to be useful for non-volatile memories and logic devices due to its perpendicular anisotropy and large current induced spin-orbit effective fields. However many aspects such as the angular and temperature dependent phenomena of the effective fields are little understood. Here, we evaluate the angular and temperature dependence of the current-induced spin-orbit effective fields considering contributions from both the anomalous and planar Hall effects. The longitudinal and transverse components of effective fields are found to have strong angular dependence on the magnetization direction at 300 K. The transverse field decreases significantly with decreasing temperature, whereas the longitudinal field shows weaker temperature dependence. Our results reveal important features and provide an opportunity for a more comprehensive understanding of current induced spin-orbit effective fields.

Origin of the Two-Dimensional Electron Gas at LaAlO3=SrTiO3 Interfaces: The Role of Oxygen Vacancies and Electronic Reconstruction

The relative importance of atomic defects and electron transfer in explaining conductivity at the crystalline LaAlO3/SrTiO3 interface has been a topic of debate. Metallic interfaces with similar electronic properties produced by amorphous oxide overlayers on SrTiO3 have called in question the original polarization catastrophe model. We resolve the issue by a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures. For both types of overlayers, there is a critical thickness for the appearance of conductivity, but its value is always 4 unit cells (around 1.6 nm) for the oxygen-annealed crystalline case, whereas in the amorphous case, the critical thickness could be varied in the range 0.5 to 6 nm according to the deposition conditions. Subsequent ion milling of the overlayer restores the insulating state for the oxygen-annealed crystalline heterostructures but not for the amorphous ones. Oxygen post-annealing removes the oxygen vacancies, and the interfaces become insulating in the amorphous case. However, the interfaces with a crystalline overlayer remain conducting with reduced carrier density. These results demonstrate that oxygen vacancies are the dominant source of mobile carriers when the LaAlO3 overlayer is amorphous, while both oxygen vacancies and polarization catastrophe contribute to the interface conductivity in unannealed crystalline LaAlO3/SrTiO3 heterostructures, and the polarization catastrophe alone accounts for the conductivity in oxygen-annealed crystalline LaAlO3/SrTiO3 heterostructures. Furthermore, we find that the crystallinity of the LaAlO3 layer is crucial for the polarization catastrophe mechanism in the case of crystalline LaAlO3 overlayers.

Direct observation of the Dzyaloshinskii-Moriya interaction in a Pt/Co/Ni film.

The interfacial Dzyaloshinskii-Moriya interaction in an in-plane anisotropic Pt(4  nm)/Co(1.6  nm)/Ni(1.6  nm) film has been directly observed by Brillouin spectroscopy. It is manifested as the asymmetry of the measured magnon dispersion relation, from which the Dzyaloshinskii-Moriya interaction constant has been evaluated. Linewidth measurements reveal that the lifetime of the magnons is asymmetric with respect to their counter-propagating directions. The lifetime asymmetry is dependent on the magnon frequency, being more pronounced, the higher the frequency. Analytical calculations of the magnon dispersion relation and linewidth agree well with experiments.

Spin-orbit torques in Co/Pd multilayer nanowires

Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (fieldlike) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 and 5 kOe at 10(8)  A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (∼1  nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.

Determination of intrinsic spin Hall angle in Pt

The spin Hall angle in Pt is evaluated in Pt/NiFe bilayers by spin torque ferromagnetic resonance measurements and is found to increase with increasing the NiFe thickness. To extract the intrinsic spin Hall angle in Pt by estimating the total spin current injected into NiFe from Pt, the NiFe thickness dependent measurements are performed and the spin diffusion in the NiFe layer is taken into account. The intrinsic spin Hall angle of Pt is determined to be 0.068 at room temperature and is found to be almost constant in the temperature range of 13–300 K.

Graphene Terahertz Modulators by Ionic Liquid Gating

Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz transmittance. It is found that, in the THz range, both the absorbance and reflectance of the device increase proportionately to the available density of states due to intraband transitions. Compact, stable, and repeatable THz transmittance modulation up to 93% (or 99%) for a single (or stacked) device has been demonstrated in a broad frequency range from 0.1 to 2.5 THz, with an applied voltage of only 3 V at room temperature.

Ultrathin BaTiO3-Based Ferroelectric Tunnel Junctions through Interface Engineering

The ability to change states using voltage in ferroelectric tunnel junctions (FTJs) offers a route for lowering the switching energy of memories. Enhanced tunneling electroresistance in FTJ can be achieved by asymmetric electrodes or introducing metal-insulator transition interlayers. However, a fundamental understanding of the role of each interface in a FTJ is lacking and compatibility with integrated circuits has not been explored adequately. Here, we report an incisive study of FTJ performance with varying asymmetry of the electrode/ferroelectric interfaces. Surprisingly high TER (∼400%) can be achieved at BaTiO3 layer thicknesses down to two unit cells (∼0.8 nm). Further our results prove that band offsets at each interface in the FTJs control the TER ratio. It is found that the off state resistance (R(Off)) increases much more rapidly with the number of interfaces compared to the on state resistance (ROn). These results are promising for future low energy memories.

Asymmetric spin-wave dispersion due to Dzyaloshinskii-Moriya interaction in an ultrathin Pt/CoFeB film

Employing Brillouin spectroscopy, strong interfacial Dzyaloshinskii-Moriya interactions have been observed in an ultrathin Pt/CoFeB film. Our micromagnetic simulations show that spin-wave nonreciprocity due to asymmetric surface pinning is insignificant for the 0.8 nm-thick CoFeB film studied. The observed high asymmetry of the monotonic spin wave dispersion relation is thus ascribed to strong Dzyaloshinskii-Moriya interactions present at the Pt/CoFeB interface. Our findings should further enhance the significance of CoFeB as an important material for magnonic and spintronic applications.

Hf thickness dependence of spin-orbit torques in Hf/CoFeB/MgO heterostructures

We have studied the spin-orbit torques in perpendicularly magnetized Hf/CoFeB/MgO system, by systematically varying the thickness of Hf underlayer. We have observed a sign change of effective fields between Hf thicknesses of 1.75 and 2 nm, indicating that competing mechanisms, such as the Rashba and spin Hall effects, contribute to spin-orbit torques in our system. For larger Hf thicknesses (>2 nm), both the components of spin-orbit torques arise predominantly from the bulk spin Hall effect. We have also confirmed these results using spin-orbit torque induced magnetization switching measurements. Our results could be helpful in designing Hf based SOT devices.