Xuhua Wang

Monolithically integrated dye-doped PDMS long-pass filters for disposable on-chip fluorescence detection

We report the fabrication of high quality monolithically integrated optical long-pass filters, for use in disposable diagnostic microchips. The filters were prepared by incorporating dye molecules directly into the microfluidic chip substrate, thereby providing a fully integrated solution that removes the usual need for discrete optical filters. In brief, lysochrome dyes were added to a poly(dimethylsiloxane) (PDMS) monomer prior to moulding of the microchip from a structured SU-8 master. Optimum results were obtained using 1 mm layers of PDMS doped with 1200 microg mL(-1) Sudan II, which resulted in less than 0.01% transmittance below 500 nm (OD 4), >80% above 570 nm, and negligible autofluorescence. These spectral characteristics compare favourably with commercially available Schott-glass long-pass filters, indicating that high quality optical filters can be straightforwardly integrated into the form of PDMS microfluidic chips. The filters were found to be robust in use, showing only slight degradation after extended illumination and negligible dye leaching after prolonged exposure to aqueous solutions. The provision of low cost high quality integrated filters represents a key step towards the development of high-sensitivity disposable microfluidic devices for point-of-care diagnostics.

Integrated thin-film polymer/fullerene photodetectors for on-chip microfluidic chemiluminescence detection

We report the use of solution-processed thin-film organic photodiodes for microscale chemiluminescence. The active layer of the photodiodes comprised a 1 : 1 blend by weight of the conjugated polymer poly(3-hexylthiophene) [P3HT] and [6,6]-phenyl-C(61)-butyric acid-methylester [PCBM]--a soluble derivative of C(60). The devices had an active area of 1 mm x 1 mm, and a broad-band response from 350 to 700 nm, with an external quantum efficiency of more than 50% between 450 and 550 nm. The photodiodes have a simple layered structure that permits facile integration with planar chip-based systems. To evaluate the suitability of the organic devices as integrated detectors for microscale chemiluminescence, a peroxyoxalate based chemiluminescence reaction (PO-CL) was monitored within a poly(dimethyl-siloxane) (PDMS) microfluidic device. Quantitation of hydrogen peroxide indicated excellent linearity and yielded a detection limit of 10 microM, comparable with previously reported results using micromachined silicon microfluidic chips with integrated silicon photodiodes. The combination of organic photodiodes with PDMS microfluidic chips offers a means of creating compact, sensitive and potentially low-cost microscale CL devices with wide-ranging applications in chemical and biological analysis and clinical diagnostics.

Towards microalbuminuria determination on a disposable diagnostic microchip with integrated fluorescence detection based on thin-film organic light emitting diodes.

As a first step towards a fully disposable stand-alone diagnostic microchip for determination of urinary human serum albumin (HSA), we report the use of a thin-film organic light emitting diode (OLED) as an excitation source for microscale fluorescence detection. The OLED has a peak emission wavelength of 540 nm, is simple to fabricate on flexible or rigid substrates, and operates at drive voltages below 10 V. In a fluorescence assay, HSA is reacted with Albumin Blue 580, generating a strong emission at 620 nm when excited with the OLED. Filter-less discrimination between excitation light and generated fluorescence is achieved through an orthogonal detection geometry. When the assay is performed in 800 microm deep and 800 microm wide microchannels on a poly(dimethylsiloxane)(PDMS) microchip at flow rates of 20 microL min(-1), HSA concentrations down to 10 mg L(-1) can be detected with a linear range from 10 to 100 mg L(-1). This sensitivity is sufficient for the determination of microalbuminuria (MAU), an increased urinary albumin excretion indicative of renal disease (clinical cut-off levels: 15-40 mg L(-1)).

Circularly Polarized Phosphorescent Electroluminescence with a High Dissymmetry Factor from PHOLEDs Based on a Platinahelicene

Circularly polarized (CP) light is of interest in areas such as quantum optical computing, optical spintronics, biomedicine, and high efficiency displays. Direct emission of CP light from organic light-emitting diodes (OLEDs) has been a focus of research as it has the immediate application of increasing efficiency and simplifying device architecture in OLED based displays. High dissymmetry (gEL) factor values have been reported for devices employing fluorescent polymers, but these CP-OLEDs are limited in their ultimate efficiencies by the type of emissive electronic transitions involved. In contrast, phosphorescent OLEDs (PHOLEDs) can emit light from triplet excited states and can therefore achieve very high efficiencies. However, CP-PHOLEDs are significantly understudied, and the two previous reports suffered from very low brightness or gEL values. Here, we use a platinahelicene complex to construct a CP-PHOLED that achieves both a display level brightness and a high gEL factor. The dissymmetry of CP emission reached with this proof-of-concept single-layer helicene-based device is sufficient to provide real-world benefits over nonpolarized emission and paves the way toward chiral metal complex-based CP-PHOLED displays.

Patterning of organic devices by interlayer lithography

We report a new lithographic procedure that enables the patterning of as-received semiconducting polymers and small molecules at the near micron level without causing discernible degradation of the patterned material. The method involves a minimum of processing steps, requires no modification of the active layer, and is compatible with both rigid and flexible substrates. The technique makes use of an intermediate resist layer between the substrate and the active layer, i.e.underneath the active layer, and involves the simultaneous patterning of the resist and active layers in a single expose/develop step. The technique has been successfully applied to the fabrication of flexible ITO-free light-emitting diodes and photodiodes, yielding peak quantum efficiencies of 8.8 cd A−1 and 57% respectively comparable to similar devices fabricated on ITO-coated glass. It is also readily extendible to the patterning on a single substrate of multiple devices incorporating different component materials, e.g. the red, green and blue pixels of a colour display.

Efficient flexible polymer light emitting diodes with conducting polymer anodes

We report polymer light emitting diodes fabricated on flexible poly(ethyleneterephthalate) substrates coated with a layer of poly(3,4-ethylene-dioxythiophene) : poly(styrenesulfonate) that was lithographically patterned to define the anode structure. A blend of poly(9,9-dioctylfluorene-co-benzothiadiazole) and poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) was then spin-coated on top as the emissive layer and the device was completed by vacuum deposition of a LiF/Al bilayer cathode. The resulting yellow light emitting diodes had typical peak power and current efficiencies of 13.7 lm W−1 and 8.8 cd A−1 respectively, which compare well with values for similar devices fabricated on ITO-coated rigid glass substrates. A maximum luminance in excess of 7300 cd m−2 was achieved.

Device physics of highly sensitive thin film polyfluorene copolymer organic phototransistors

We report on solution processed, highly light sensitive thin film transistors (TFTs) based on poly(9,9-dioctylfluorene-co-bithiophene) (F8T2). Transistors without heat treatment showed the highest saturation mobility, while devices annealed at 280°C showed the highest drain current. The latter annealed transistors were found to give highly stable and reproducible performance over many light cycles. Measurements were carried out using an inorganic light emitting diode (LED) light source with a peak wavelength of 465nm and 19nm bandwidth from 0to400μW∕cm2 light intensity on TFTs with an F8T2 film thickness of 30nm. The TFT OFF current was found to increase both with light intensity and gate bias. The bulk photogenerated carrier density was calculated to change from 5×1011to1×1013cm−3 over the measured light intensity range. The TFT saturation mobility did not change with light intensity, remaining constant at 1.2×10−4cm2∕Vs. The TFT ON current instead increased due to a shift in the turn-on voltage VT. This...

High efficiency flexible ITO-free polymer/fullerene photodiodes.

We report efficient polymer photodiodes fabricated on flexible polyethyleneterephthalate (PET) substrates. The PET substrates were coated with a layer of poly(3,4-ethylene-dioxythiophene): polystyrenesulfonate (PEDOT:PSS) that was lithographically patterned to define the anode structure. A blend of poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 (PCBM) was then spin-coated from a 1 : 1 mixture by weight of the two components in dichlorobenzene, and the device was completed by vacuum deposition of an aluminium electrode in vacuum. The resulting photodiodes had short-circuit quantum efficiencies of 45% and peak power efficiencies of 3%, which compare favourably with values for similar devices fabricated on rigid indium tin oxide (ITO) coated glass substrates.

Deep-blue light emitting triazatruxene core/oligo-fluorene branch dendrimers for electroluminescence and optical gain applications

We report conjugated dendrimers that can be used to fabricate efficient (≤1.0 lm W−1 at ~100 cd m−2) deep-blue emission (1931 CIE (x, y) = (0.15, 0.10)) and high luminance (≤6000 cd m−2) organic light emitting diodes (OLEDs). Slab waveguide structures of these materials show low amplified spontaneous emission (ASE) thresholds (≥50 nJ for 390 nm, 10 ns, 10 Hz, pulsed excitation). In addition, we report OLEDs based on binary blends of the dendrimers with the green light emitting polymer poly(9, 9-dioctylfluorene-co-benzothiadiazole): these have low turn on voltages (≥2.2 V) and produce high efficiency (18.2 lm W−1 at ~100 cd m−2) green electroluminescence.

Long-range proton conduction across free-standing serum albumin mats

Free‐standing serum‐albumin mats can transport protons over millimetre length‐scales. The results of photoinduced proton transfer and voltage‐driven proton‐conductivity measurements, together with temperature‐dependent and isotope‐effect studies, suggest that oxo‐amino‐acids of the protein serum albumin play a major role in the translocation of protons via an “over‐the‐barrier” hopping mechanism. The use of proton‐conducting protein mats opens new possibilities for bioelectronic interfaces.