Xumin Gao

On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities.

We propose, fabricate and demonstrate on-chip photonic integration of suspended InGaN/GaN multiple quantum wells (MQWs) devices on the GaN-on-silicon platform. Both silicon removal and back wafer etching are conducted to obtain membrane-type devices, and suspended waveguides are used for the connection between p-n junction InGaN/GaN MQWs devices. As an in-plane data transmission system, the middle p-n junction InGaN/GaN MQWs device is used as a light emitting diode (LED) to deliver signals by modulating the intensity of the emitted light, and the other two devices act as photodetectors (PDs) to sense the light guided by the suspended waveguide and convert the photons into electrons, achieving 1 × 2 in-plane information transmission via visible light. Correspondingly, the three devices can function as independent PDs to realize multiple receivers for free space visible light communication. Further, the on-chip photonic platform can be used as an active electro-optical sensing system when the middle device acts as a PD and the other two devices serve as LEDs. The experimental results show that the auxiliary LED sources can enhance the amplitude of the induced photocurrent.

On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells(MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode(LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

Integrated p–n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities

We propose, fabricate, and demonstrate integrated p–n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities on a GaN-on-silicon platform. Suspended devices with a common n-contact are realized using a wafer-level process. For the integrated devices, part of the light emitted by a light-emitting diode (LED) is guided in-plane through a suspended waveguide and is sensed by another photodiode. The induced photocurrent is tuned by the LED. The integrated devices can act as two independent LEDs to deliver different signals simultaneously for free-space visible light communication. Furthermore, the suspended devices can be used as two separate photodiodes to detect incident light with a distinct on/off switching performance.

Multiline resonant filters fashioned with different periodic subwavelength gratings

We present the potential realization of multiline optical filters by the integration of different periodic gratings, which are implemented on an HfO₂-on-silicon platform. Supporting arms are used to manage the relief of residual stress to obtain freestanding HfO₂ gratings. The spectral properties are calculated by the rigorous coupled wave analysis method and measured by angular-resolved microreflectance. Multiple symmetric double resonances occur at the normal incidence, and asymmetric double resonances, which are attributed to the superposition of guided-mode resonances caused by different periodic gratings, are clearly observed under the off-normal incidence. The experimental results indicate that our proposed grating structures are promising for the realization of multiline filters.

Simultaneous light emission and detection of InGaN/GaN multiple quantum well diodes for in-plane visible light communication

Abstract This paper presents the design, fabrication, and experimental characterization of monolithically integrated p-n junction InGaN/GaN multiple quantum well diodes (MQWDs) and suspended waveguides. Suspended MQWDs can be used as transmitters and receivers simultaneously, and suspended waveguides are used for light coupling to create an in-plane visible light communication system. Compared to the waveguide with separation trench, the calculated total light efficiency is increased from 18% to 22% for the continuous waveguide. The MQWDs are characterized by their typical current-voltage performance, and the pulse excitation measurements confirm that the InGaN/GaN MQWDs can achieve the light emission and photodetection at the same time. The photocurrent measurements indicate that the photocurrent is modulated by a bias voltage and that the photons are being supplied from another transmitter. An experimental demonstration is presented showing that the proposed device works well for in-plane full-duplex communication using visible light.

Angular-dependent polarization-insensitive filter fashioned with zero-contrast grating

We report here an angular-dependent polarization-insensitive filter fashioned with a free-standing zero-contrast grating (ZCG), which is implemented on an HfO(2)/Silicon platform. The spectral characteristics are investigated by rigorous coupled-wave analysis method and measured on angular-resolved micro-reflectance system. The proposed ZCG structure experimentally shows that the polarization-insensitive resonances occur at 595nm for the incidence angle θ of 12.8° and 500nm for the incidence angle θ of 14.2°. When the incident light is normal to the grating surface, the ZCG device generates yellow and red colors for p- and s-polarization, respectively. The experimental results are in good agreement with the simulations, which indicate that the free-standing ZCG device is promising for polarization-insensitive filter and polarization-controlled tunable color filter.

Monolithic integration of a suspended light-emitting diode with a Y-branch structure

We describe a double-sided process for the monolithic integration of a light-emitting diode (LED) and a Y-branch structure on a GaN-on-silicon platform. The suspended LED and highly confined waveguides are fabricated by silicon removal with back-side thinning of the suspended membrane. When the LED is turned on, part of the light emission is confined by a suspended rectangular waveguide, and the light propagates laterally. The guided light is then coupled into two branching rectangular waveguides and diffracted into the air at the output facets. The light output can be tuned by the LED, opening the potential for more sophisticated integrated photonic circuits.

Visible light indoor positioning fashioned with a single tilted optical receiver

We propose a compact visible light indoor positioning system fashioned with a single transmitter and a single tilted receiver. The tilted optical receiver is mounted on a rotatable platform and thus, various azimuth angles can be obtained by rotating the platform, which offers a feasible way to perform multiple measurements with different azimuth angles to achieve the angle gain. An indoor positioning algorithm is provided in comparison with the angle gain difference. Experimental results show that the average distance error between the estimated position and the real position is less than 25 mm in an indoor environment of 600mm×600mm×1135mm, which is in good agreement with the simulations. This work indicates that the proposed compact system is promising for visible light indoor positioning.

Saturation Behavior for a Comb-Like Light-Induced Synaptic Transistor

We propose and fabricate a comb-like light-induced synaptic transistor composed of two InGaN/GaN multiple-quantum-well diodes (MQWDs) with a common base. One InGaN/GaN MQWD is used as an emitter of light, and another InGaN/GaN MQWD is used as a collector. When a presynaptic voltage is applied to the emitter to generate light, the collector absorbs the emitted light and demonstrates an excitatory postsynaptic voltage (EPSV). Saturated EPSV behavior occurs at the collector when multiple pulse signals are continuously applied to the emitter. The saturated EPSV value is increased and the saturated pulse number is reduced as the amplitude of the applied pulse signal increases. Experimental results indicate that continuous stimuli with a high pulse intensity will greatly improve the memory effect during the learning process.

Light Induced Synaptic Transistor With Dual Operation Modes

We propose and fabricate a light induced transistor using a combination of two multiple-quantum-well diodes (MQWDs) with a common n-electrode as the base. Both silicon removal and back wafer etching are conducted to obtain a suspended device architecture. The InGaN/GaN MQWD detects light only when the bias voltage is below the turn-ON voltage and can simultaneously achieve light emission and detection when it turns ON. Therefore, the light induced transistor operates with two distinct light detection modes. The excitatory postsynaptic voltages (EPSVs) are distinct due to the different decay times. Paired-pulse facilitation is experimentally demonstrated to mimic the synaptic plasticity behavior. The EPSV amplitudes are dependent on the pulse interval and pulse number.