Y.F. Lin

2.0W diode-pumped Er:Yb:YAl3(BO3)4 laser at 1.5–1.6μm

An efficient and high output power laser has been realized for an Er:Yb:YAl3(BO3)4 crystal end pumped by a 970nm diode laser. Under the absorbed pump power of 15.5W, quasi-continuous-wave output power of 2.0W at 1.5–1.6μm has been obtained in a hemispherical cavity. The laser had an absorbed pump threshold power of 4.7W and a slope efficiency of 21%. The influence of the laser output power and output coupler transmission on the output laser spectra has also been investigated.

Highly efficient Nd3+:LaB3O6 cleavage microchip laser

The improvement of the laser performances of an unprocessed 5.6at.% Nd3+:LaB3O6 cleavage microchip has been reported. Pumped by a Ti:sapphire laser at 871nm, quasi-cw output laser power up to 395mW around 1060nm wavelength with slope efficiency near 52% has been obtained in an end-pumped plano-plano resonator. The influence of the ratio between the cavity mode and pump beam area on the laser performances and laser spectra at various output powers has been investigated. The experimental results have shown that the cleavage technique can become a practical and effective method to obtain the microchip laser medium easily and directly.

Passively Q-switched laser operation of Nd:LaB3O6 cleavage microchip

Pumped by a Ti:sapphire laser, a passively Q-switched laser oscillation from an unprocessed Nd:LaB3O6 cleavage microchip with a Cr4+:YAG saturable absorber has been demonstrated. The influence of the transmission of the output coupler on the pulse width and repetition rate at various absorbed pump powers has been investigated. A pulse with 2.8μJ energy, 2.2ns duration, and 29kHz repetition rate at 1060nm was obtained at the absorbed pump power of 1.25W and output coupler transmission of 3.2%, which results in 1.25kW peak power. The polarization and spectral properties of laser radiation were measured.