Y.G. Zhang

The effects of (NH4)2S passivation treatments on the dark current–voltage characteristics of InGaAsSb PIN detectors

Abstract Alkali and neutralized (NH 4 ) 2 S passivation treatment effects on the performance of MBE-grown InGaAsSb/GaSb PIN detectors have been studied. Results show the dark current density under −0.5xa0V bias decreased from 1.01xa0mA/cm 2 to 490xa0μA/cm 2 for alkali (NH 4 ) 2 S solution treatment and 87xa0μA/cm 2 for neutralized (NH 4 ) 2 S solution treatments, respectively. A modified neutralized (NH 4 ) 2 S passivation method for GaSb-based antimonide devices has been proposed. The XPS spectra indicated that (NH 4 ) 2 S passivation can suppress oxidization and form Ga–S and In–S bonds on the InGaAsSb surface.

Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

Abstract Strain compensated 1.3xa0μm InAsP/InGaAsP laser structures have been grown by using gas source MBE and the ridge waveguide laser diodes have been fabricated. The temperature characteristics of those laser chips have been investigated in detail. The ridge type laser chips show threshold current about 10xa0mA at room temperature, with slope efficiency greater than 0.35xa0W/A/un-coated facet. The characteristic temperature of the threshold current were greater than 90xa0K from 25°C to 90°C. The spectral and far field characteristics of those laser chips also have been investigated.

High-performance InP-based InAs triangular quantum well lasers operating beyond 2 μm

InP-based antimony-free In0.53Ga0.47As/InAs/In0.53Ga0.47As strained triangular quantum well lasers have been demonstrated for the light sources with wavelength beyond 2 μm. Theoretical estimation shows that the triangular quantum well owns the longer emission wavelength than the rectangular quantum well with the same strain extent. The triangular quantum well was formed experimentally by using gas source molecular beam epitaxy grown digital alloy, and the growth temperature of the triangular quantum wells was optimized. The triangular quantum well lasers with emission beyond 2.2 μm under continuous-wave operation at temperatures higher than 330 K have been demonstrated. The performances of the triangular quantum well lasers are improved comparing to those of InAs rectangular quantum lasers with the nearly same lasing wavelength.