Y. Lifshitz

Room-temperature single nanoribbon lasers

Using a single nano-object measurement methodology that enables the correlation between size/morphology/structure and photoluminescence (PL) characteristics, we show that nanoribbons are an excellent model system to study single nano-objects. In particular, we measure the PL characteristics of optically pumped individual single-crystal zinc–sulfide nanoribbons. Small collection angle measurements show that nanoribbons form excellent optical cavities and gain medium with high (full width at half maximum<0.1 nm) lasing modes free of PL background even for a low pumping power density of 9 kW/cm2. Large collection angles add a broad PL component and obscure the correct high-quality lasing of the nanowires/nanoribbons.

Structures and energetics of hydrogen-terminated silicon nanowire surfaces

The analysis and density-functional tight-binding simulations of possible configurations of silicon nanowires (SiNWs) enclosed by low-index surfaces reveal a number of remarkable features. For wires along <100>, <110>, and <111> directions, many low-index facet configurations and cross sections are possible, making their controlled growth difficult. The 112 wires are the most attractive for research and applications because they have only one configuration of enclosing low-index facets with a rectangular cross section, enclosed with the most stable (111) facet and the (110) facet next to it. In general, the stability of the SiNWs is determined by a balance between (1) minimization of the surface energy gamma(111)svr(rectangular)>svr(triangular)]. The energy band gaps follow the order of <100>wires > <112>wires > <111>wires > <110>wires. The results are compared with our recent scanning tunneling microscopy and transmission electron microscopy data.

Smallest diameter carbon nanotubes

Mass-selected carbon ion beam deposition (MSIBD) was used to demonstrate that the diameter of a carbon nanotube could be as small as 0.4 nm, the theoretical limit predicted but never experimentally reached so far. The deposition was performed at an elevated temperature much lower than the high temperatures (800–1000 °C) needed for deposition of carbon nanotubes by conventional methods. High-resolution transmission electron microscopy showed that the combination of the stress induced by the ion impact and the C migration at the temperature applied formed graphitic sheets with their normal (c axis) parallel to the surface of the silicon substrate. Some sheets closed to form multiwall nanotubes. The smallest diameter of the innermost tube was found to be 0.4 nm. The novel use of MSIBD (a pure method, catalyst free, low deposition temperature, easily applied to large surfaces without surface pretreatment capable of pattern-writing) may significantly advance the carbon nanostructure technology.

Nanostructure: Epitaxial diamond polytypes on silicon

Carbon is unique in the variety of configurations it can adopt with itself and other elements. Here we show how ion beams can be used to nanostructure various diamond polytypes, epitaxially aligning them to a silicon substrate. The ready controllability of ion beams, which are already used to manufacture submicrometre-scale devices, means that our findings should enable new carbon and non-carbon materials to be nanostructured for a host of applications.

Growth modes of ZnO nanostructures from laser ablation

ZnO nanowires (NWs) and other nanostructures were grown by laser ablation of a ZnO containing target onto different substrates with and without the presence of an Au catalyst. The morphology and structure of the NWs were studied using high resolution scanning and transmission electron microscopes [including imaging, selected area electron diffraction (SAED), and energy dispersive x-ray spectroscopy (EDS)]. The different growth modes obtainable could be tuned by varying the Zn concentration in the vapor phase keeping other growth parameters intact. Possible growth mechanisms of these nanowires are suggested and discussed.

Materials science: The road to diamond wafers

Diamond could rival silicon as the material of choice for the electronics industry, but has been held back by the difficulty of growing large enough wafers. This problem may now be solved.