Y. M. Galperin

Direct generation of charge carriers in c-Si solar cells due to embedded nanoparticles

It is known that silicon is an indirect band gap material, reducing its efficiency in photovoltaic applications. Using surface plasmons in metallic nanoparticles embedded in a solar cell has recently been proposed as a way to increase the efficiency of thin-film silicon solar cells. The dipole mode that dominates the plasmons in small particles produces an electric field having Fourier components with all wave numbers. In this work, we show that such a field creates electron-hole-pairs without phonon assistance, and discuss the importance of this effect compared to radiation from the particle and losses due to heating.

Localized states in glasses

Abstract The properties of amorphous materials determined by the presence of localized atomic and electronic states are reviewed. Experimental data on atomic dynamics in glasses are described. The two-level-system (TLS) model is presented, and the limits of its applicability analysed. The concept of soft atomic potentials, allowing generalization of the TLS model to higher energies, is introduced. Atomic dynamics in soft potentials, as well as soft-potential coupling with phonons and thermal expansion of glasses, are described. Localized electronic states in glasses are investigated and different theoretical models of such states in glassy semiconductors are reviewed. The connection between localized electronic states and soft potentials is studied. Particular attention is paid to low-relaxation processes in glasses controlled by two-well soft potentials; specifically, low-frequency noise in disordered conductors is considered. The possibility of investigating the localized states in question with the hel...

Dendritic and uniform flux jumps in superconducting films

Recent theoretical analysis of spatially-nonuniform modes of the thermomagnetic instability in superconductors [Phys. Rev. B 70, 224502 (2004)] is generalized to the case of a thin film in a perpendicular applied field. We solve the thermal diffusion and Maxwell equations taking into account nonlocal electrodynamics in the film and its thermal coupling to the substrate. The instability is found to develop in a nonuniform, fingering pattern if the background electric field, E, is high and the heat transfer coefficient to the substrate, h0, is small. Otherwise, the instability develops in a uniform manner. We find the threshold magnetic field, H_fing(E,h0), the characteristic finger width, and the instability build-up time. Thin films are found to be much more unstable than bulk superconductors, and have a stronger tendency for formation of dendritic pattern.

Onset of dendritic flux avalanches in superconducting films

We report a detailed comparison of experimental data and theoretical predictions for the dendritic flux instability, believed to be a generic behavior of type-II superconducting films. It is shown that a thermomagnetic model published very recently [Phys. Rev. B 73, 014512 (2006)10.1103/PhysRevB.73.014512] gives an excellent quantitative description of key features like the stability onset (first dendrite appearance) magnetic field, and how the onset field depends on both temperature and sample size. The measurements were made using magneto-optical imaging on a series of different strip-shaped samples of MgB2. Excellent agreement is also obtained by reanalyzing data previously published for Nb.

Heat transport in ultrathin dielectric membranes and bridges

Phonon modes and their dispersion relations in ultrathin homogeneous dielectric membranes are calculated using elasticity theory. The approach differs from the previous ones by a rigorous account of the effect of the film surfaces on the modes with different polarizations. We compute the heat capacity of membranes and the heat conductivity of narrow bridges cut out of such membranes, in a temperature range where the dimensions have a strong influence on the results. In the high-temperature regime we recover the three-dimensional bulk results. However, in the low-temperature limit the heat capacity CV is proportional to T (temperature), while the heat conductivity k of narrow bridges is proportional to T 3/2 , leading to a thermal cutoff frequency f c =k / CV~ T 1/2 .

Non-Gaussian low-frequency noise as a source of qubit decoherence.

With the growing efforts in isolating solid-state qubits from external decoherence sources, the material-inherent sources of noise start to play crucial role. One representative example is electron traps in the device material or substrate. Electrons can tunnel or hop between a charged and an empty trap, or between a trap and a gate electrode. A single trap typically produces telegraph noise and can hence be modeled as a bistable fluctuator. Since the distribution of hopping rates is exponentially broad, many traps produce flicker-noise with spectrum close to 1/f. Here we develop a theory of decoherence of a qubit in the environment consisting of two-state fluctuators, which experience transitions between their states induced by interaction with thermal bath. Due to interaction with the qubit the fluctuators produce 1/f-noise in the qubits eigenfrequency. We calculate the results of qubit manipulations - free induction and echo signals - in such environment. The main problem is that in many important cases the relevant random process is both non-Markovian and non-Gaussian. Consequently the results in general cannot be represented by pair correlation function of the qubit eigenfrequency fluctuations. Our calculations are based on analysis of the density matrix of the qubit using methods developed for stochastic differential equations. The proper generating functional is then averaged over different fluctuators using the so-called Holtsmark procedure. The analytical results are compared with simulations allowing checking accuracy of the averaging procedure and evaluating mesoscopic fluctuations. The results allow understanding some observed features of the echo decay in Josephson qubits.We study decoherence in a qubit with the distance between the two levels affected by random flips of bistable fluctuators. For the case of a single fluctuator we evaluate explicitly an exact expression for the phase-memory decay in the echo experiment with a resonant ac excitation. The echo signal as a function of time shows a sequence of plateaus. The position and the height of the plateaus can be used to extract the fluctuator switching rate gamma and its coupling strength v. At small times the logarithm of the echo signal is proportional to t3. The plateaus disappear when the decoherence is induced by many fluctuators. In this case the echo signal depends on the distribution of the fluctuators parameters. According to our analysis, the results significantly deviate from those obtained in the Gaussian model as soon as v greater than or approximately equal gamma.

Population Inversion Induced by Resonant States in Semiconductors

We present a theoretical prediction of a new mechanism for carrier population inversion in semiconductors under an applied electric field. The mechanism is originated from a coherent capture-emission type inelastic scattering of resonant states. We support our theory with concrete calculations for shallow acceptor resonant states in strained p-Ge where a lasing in THz frequency region has been recently observed.

Decoherence in qubits due to low-frequency noise

The efficiency of the future devices for quantum information processing will be limited mostly by the finite decoherence rates of the qubits. Recently, substantial progress was achieved in enhancing the time within which a solid-state qubit demonstrates coherent dynamics. This progress is based mostly on a successful isolation of the qubits from external decoherence sources. Under these conditions, the material-inherent sources of noise start to play a crucial role. In most cases, the noise that the quantum device demonstrates has a 1/f spectrum. This suggests that the environment that destroys the phase coherence of the qubit can be thought of as a system of two-state fluctuators, which experience random hops between their states. In this short review, the current state of the theory of the decoherence due to the qubit interaction with the fluctuators is discussed. The effect of such an environment on two different protocols of the qubit manipulations, free induction and echo signal, is described. It turns out that in many important cases the noise produced by the fluctuators is non-Gaussian. Consequently, the results of the interaction of the qubit with the fluctuators are not determined by the pair correlation function alone. We describe the effect of the fluctuators using the so-called spin-fluctuator model. Being quite realistic, this model allows one to exactly evaluate the qubit dynamics in the presence of one fluctuator. This solution is found, and its 5 Author to whom any correspondence should be addressed.

Dendritic flux patterns in MgB2 films

Magneto-optical studies of a c-oriented MgB2 film with a critical current density of 107?A?cm-2 demonstrate a breakdown of the critical state at temperatures below 10?K. Instead of conventional uniform and gradual flux penetration in an applied magnetic field, we observe an abrupt invasion of complex dendritic structures. When the applied field subsequently decreases, similar dendritic structures of the return flux penetrate the film. The static and dynamic properties of the dendrites are discussed.

Finger patterns produced by thermomagnetic instability in superconductors

A linear analysis of thermal diffusion and Maxwell equations is applied to study the thermomagnetic instability in a type-II superconducting slab. It is shown that the instability can lead to formation of spatially nonuniform distributions of magnetic field and temperature. The distributions acquire a finger structure with fingers perpendicular to the screening current direction. We derive the criterion for the instability, and estimate its build-up time and characteristic finger width. The fingering instability emerges when the background electric field is larger than a threshold field,