Y. Miyoshi

Structural, magnetic, and transport properties of thin films of the Heusler alloy Co2MnSi

Thin films of Co2MnSi have been grown on a-plane sapphire substrates from three elemental targets by dc magnetron cosputtering. These films are single phase, have a strong (110) texture, and a saturation magnetization of 4.95μB/formula unit at 10 K. Films grown at the highest substrate temperature of 715 K showed the lowest resistivity (47 μΩ cm at 4.2 K) and the lowest coercivity (18 Oe). The spin polarization of the transport current was found to be of the order of 54% as determined by point contact Andreev reflection spectroscopy. A decrease in saturation magnetization with a decrease in film thickness and different transport behavior in thinner films indicate graded disorder in these films grown on nonlattice matched substrates.

Structural and transport studies of stoichiometric and off-stoichiometric thin films of the full Heusler alloy Co2MnSi

Co2MnSi Heusler alloy thin films have been grown by cosputtering from three elemental targets. Changes in growth temperature and stoichiometry affect the film texture and the temperature dependence of the resistivity. However, the spin polarization of the transport current is insensitive to these changes, being of the order of 54% as determined by point contact Andreev reflection spectroscopy. Stoichiometric films are single phase, have a strong (110) texture, and a saturation magnetization of 1007 emu/cc (4.95 μB/formula unit) at 10 K.

Interface effects in highly oriented films of the Heusler alloy Co2MnSi on GaAs(001)

Highly (001) oriented thin films of Co2MnSi have been grown on lattice-matched GaAs(001) without a buffer layer. Stoichiometric films grown at the highest substrate temperature of 689 K showed the lowest resistivity (33μΩcm at 4.2 K) and the lowest coercivity (14 Oe). Twofold in-plane magnetic anisotropy was observed due to the inequivalence of the ⟨110⟩ directions, and this was attributed to the nature of the bonding at the reconstructed GaAs surface. Interfacial reactions resulted in the formation of an epitaxial Mn-As region and a thin interfacial layer that was Co-Ga rich. This prevented the desired lattice matching and resulted in films with a saturation magnetization slightly below the bulk value. In spite of this, the spin polarization of the free surface was measured to be 55%, similar to bulk material.

Highly aligned, spin polarized thin films of Sr2FeMoO6 by a chemical vapor process

Highly oriented films of Sr2FeMoO6 were fabricated by ultrasonic spray pyrolysis. A combined organic/inorganic solution was developed and the films were deposited on single-crystal LaAlO3 between 600 °C and 900 °C followed by postannealing at 850 °C or 1200 °C in Ar/5% H2. Optimum films showed a metallic resistivity behavior with less than a 0.25% magnetoresistive effect at 50 K, 1 T, indicative of highly quality intra- and intergranular material. At 4.2 K, the lower bound saturation magnetization, Ms was ∼2.5 μB/f.u. and the transport spin polarization was 60±3%.

Heat capacity and latent heat measurements of CoMnSi using a microcalorimeter

A new method of utilizing a commercial silicon nitride membrane calorimeter to measure the latent heat at a first order phase transition is presented. The method is a direct measurement of the thermoelectric voltage jump induced by the latent heat, in a thermally isolated system ideally suited for single crystal and small microgram samples. We show that when combined with the ac calorimetry technique previously developed, the resultant thermal measurement capabilities are extremely powerful. We demonstrate the applicability of the combined method with measurements on a 100 microm size fragment of CoMnSi exhibiting a sizable magnetocaloric effect near room temperature, and obtain good agreement with previously reported values on bulk samples.

Synthesis and physical properties of arc melted NiMnSb

Several polycrystalline samples of the half-Heusler alloy NiMnSb were grown by arc melting of stoichiometric and nonstoichiometric amounts of high-purity constituent elements. The structure and the phase-purity of the prepared samples were examined systematically by powder x-ray diffraction. The transport properties of the best sample, with saturation magnetization M-s(5 K)=4 mu(B)/formula unit, were studied by measuring electrical resistivity, thermal conductivity, and thermopower. Features in both magnetic and transport data are consistent with NiMnSb being in a half-metallic state at low temperatures, i.e., the conduction electrons are fully spin polarized. However, point-contact Andreev reflection measurements on the same sample at 4.2 K demonstrate only similar to45% spin polarization.

Structure of the superconducting gap in MgB2 from point-contact spectroscopy

We have studied the structure of the superconducting gap in MgB2 thin films by means of point-contact spectroscopy using a gold tip. The films were produced by depositing pure boron on a sapphire substrate, using e-beam evaporation, followed by reaction with magnesium vapour. The films have a Tc of 38.6 ? 0.3 K and resistivity of about 20 ?? cm at 40 K. The point-contact spectra prove directly the existence of a multi-valued order parameter in MgB2, with two distinct values of the gap, ?1 = 2.3 ? 0.3 meV and ?2 = 6.2 ? 0.7 meV at 4.2 K. Analysis of the spectra in terms of the Blonder?Tinkham?Klapwijk model reveals that both gaps close simultaneously at the Tc of the film. Possible mechanisms that can explain the intrinsic coexistence of two values of the gap are discussed.

Microwave surface resistance of MgB2

The microwave power and frequency dependence of the surface resistance of MgB2 films and powder samples were studied. Sample quality is relatively easy to identify by the breakdown in the ω2 law for poor-quality samples at all temperatures. The performance of MgB2 at 10 GHz and 21 K was compared directly with that of high-quality YBCO films. The surface resistance of MgB2 was found to be approximately three times higher at low microwave power and showed an onset of nonlinearity at microwave surface fields ten times lower than the YBCO film. It is clear that MgB2 films are not yet optimized for microwave applications.

The spin polarization of CrO2 revisited

Here, we use Andreev reflection spectroscopy to study the spin polarization of high quality CrO2 films. We study the spin polarization as a function of growth temperature, resulting in grain size and electrical resistivity. In these films low temperature growth appears to be a necessary but not sufficient condition to guarantee the observation of high spin polarization, and this is only observed in conjunction with suppressed superconducting gap values and anomalously low interface properties. We suggest that this combination of observations is a manifestation of the long range spin triplet proximity effect.

Effect of magnetic field on the two superconducting gaps in MgB2

Double-gap superconductivity in an epitaxial MgB2 film has been studied by means of point-contact spectroscopy in magnetic field up to 8 Tesla. The relatively fast disappearance of the feature associated with the pi-band gap at a field around 1 T is caused by the line broadening due to strong pair breaking rather than to a collapse of the double-gap state. This pair breaking was found to increase linearly with field. Field dependences of the order parameters Delta_pi and Delta_sigma in the pi and sigma bands were measured in field applied parallel and perpendicular to the film, at T = 4.2 K. In perpendicular field, both order parameters survive to a common Hc2, which is about 6.5 T for this direction. In parallel field, the decrease of Delta_sigma is much more gradual, consistent with the Hc2 being about 4 times greater in this ori-entation. The difference in Delta_pi measured in the two field orientations is however smaller than the difference of Delta_sigma. We compare these results with the data on tunnelling spectroscopy and specific heat measurements of MgB2 single crystals and find consistency between the different experimental approaches.