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Featured researches published by Y.-R. Ma.


Surface Science | 1998

Translation, rotation and removal of C60 on Si(100)-2 × 1 using anisotropic molecular manipulation

Philip Moriarty; Y.-R. Ma; M. D. Upward; Peter H. Beton

We have investigated the interactions of C60 molecules adsorbed on Si(100)-(2 × 1) through their response to manipulation induced by a scanning tunneling microscope operating at room temperature. Intramolecular features are resolved which vary as a molecule is displaced showing that C60 undergoes rotation during tip-induced displacement. For translation to and from certain bonding sites, the apparent size of a molecule may change following lateral manipulation. Furthermore, reversible changes in dimer buckling are observed as a molecule is moved across the surface. Our experimental observations show that the C60Si(100)-(2 × 1) interaction is dominant over the C60C60 interaction and attempts to move a molecular pair result in the transfer of one molecule across a dimer row due to barrier lowering by the intermolecular interaction. We also show that transfer of a molecule from sample to tip (or vice versa) changes both the imaging and manipulation properties of the tip.


Surface Science | 1998

C60 adsorption on the Si(110)-(16 × 2) surface

Y.-R. Ma; Philip Moriarty; M. D. Upward; Peter H. Beton

Abstract The interaction of C 60 with the Si(110)-(16 × 2) surface has been studied using a scanning tunnelling microscope (STM). For a submonolayer coverage isolated C 60 molecules are observed with no evidence for a preferential adsorption site. As the coverage is increased, a disordered monolayer is observed and at still higher coverage disordered aggregates are observed which ripen into hexagonally ordered islands. These islands could be disrupted by the STM tip and were desorbed by annealing. Our results show that the interaction between the disordered layer and C 60 islands is weak. However, the first monolayer is strongly bonded to the Si surface and forms a passivating layer which is stable to exposure to atmosphere.


Surface Science | 1997

Adsorption of Sb on GaAs(111)B studied by photoemission and low energy electron diffraction

Attilio A. Cafolla; C. McGinley; E. McLoughlin; Greg Hughes; Philip Moriarty; A. W. Dunn; Y.-R. Ma; D. Teehan; B. Murphy; S. Downes; D. A. Woolf

Abstract The surface structures resulting from the deposition of Sb on the GaAs(111)B-(2 × 2) surface at room temperature followed by annealing, have been studied by high-resolution soft X-ray photoemission (SXPS) and low energy electron diffraction (LEED). For depositions at room temperature with no subsequent anneal and for annealing temperatures up to 300°C, Sb islands are formed between which the As trimer-based (2 × 2) substrate reconstruction of the clean GaAs surface is observed. Annealing to temperatures between 350 and 475°C leads to the creation of Sb chain pairs coexisting with regions of Sb trimers. At 500°C an ordered surface is produced, associated with Sb trimers and an As vacancy.


Semiconductor Science and Technology | 1998

Probing the interactions of on Si(100)- using anisotropic molecular manipulation

Philip Moriarty; Y.-R. Ma; M. D. Upward; Peter H. Beton; D. Teehan

We have investigated the response of molecules adsorbed on to manipulation induced by a scanning tunnelling microscope. Our results show that the interaction is greater than the interaction. Attempts to move a molecular pair result in the transfer of one molecule across a dimer row due to barrier lowering caused by the intermolecular interaction. Our results suggest that is chemisorbed and this is confirmed by Si 2p core-level photoemission spectra.


Fullerene Science and Technology | 1997

Investigation and manipulation of C60 on a Si surface using a scanning tunneling microscope

Philip Moriarty; A. W. Dunn; Y.-R. Ma; M. D. Upward; Peter H. Beton

Abstract We have demonstrated that the tip of a scanning tunnelling microscope (STM) may be used to position individual C60 molecules on a Si(111) surface. This work is reviewed together with more recent results on STM modification of C60multilayers. The chemical passivation of Si(111) by a C60 monolayer is also discussed.


Physical Review B | 1998

C60-TERMINATED SI SURFACES : CHARGE TRANSFER, BONDING, AND CHEMICAL PASSIVATION

Philip Moriarty; M. D. Upward; A. W. Dunn; Y.-R. Ma; Peter H. Beton; D. Teehan


Physical Review B | 1997

Absence of long-range ordered reconstruction on the GaAs(311)A surface

Philip Moriarty; Y.-R. Ma; A. W. Dunn; Peter H. Beton; M. Henini; Colm McGinley; Eilish McLoughlin; Attilio A. Cafolla; Greg Hughes; S. Downes; D. Teehan; B. Murphy


Physical Review B | 1996

ADSORBED AND SUBSTITUTED SB DIMERS ON GAAS(001)

Philip Moriarty; Peter H. Beton; Y.-R. Ma; M. Henini; D. A. Woolf


Physical Review Letters | 1997

DISORDER-ORDER RIPENING OF C60 ISLANDS

Y.-R. Ma; Philip Moriarty; Peter H. Beton


Surface Science | 1998

Reconstruction dependent adsorption of C60 on GaAs(111)B

Philip Moriarty; M. D. Upward; Y.-R. Ma; A. W. Dunn; Peter H. Beton; D. Teehan; D.A. Woolf

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Peter H. Beton

University of Nottingham

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M. D. Upward

University of Nottingham

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A. W. Dunn

University of Nottingham

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M. Henini

University of Nottingham

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