Y. S. Zou

Fabrication of diamond nanopillars and their arrays

High-density, uniform diamond nanopillar arrays were fabricated by employing bias-assisted reactive ion etching in a hydrogen/argon plasma. Gold nanodots were employed as etching masks. The formation of nanopillar structure is associated with the directional physical etching/sputtering by ion bombardment and selective chemical etching of sp2 carbons by reactive hydrogen atoms and ions. The density and geometry of the nanopillars depend on the initial structure of diamond films and reactive ion etching conditions. The nanopillars with high aspect ratio and large surface area may have potential applications in high-efficiency and high-sensitivity diamond-based biomedical and chemical sensors and in mechanical and thermal management.High-density, uniform diamond nanopillar arrays were fabricated by employing bias-assisted reactive ion etching in a hydrogen/argon plasma. Gold nanodots were employed as etching masks. The formation of nanopillar structure is associated with the directional physical etching/sputtering by ion bombardment and selective chemical etching of sp2 carbons by reactive hydrogen atoms and ions. The density and geometry of the nanopillars depend on the initial structure of diamond films and reactive ion etching conditions. The nanopillars with high aspect ratio and large surface area may have potential applications in high-efficiency and high-sensitivity diamond-based biomedical and chemical sensors and in mechanical and thermal management.

193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

Deep-ultraviolet (DUV) solar-blind photodetectors based on high-quality cubic boron nitride (cBN) films with a metal/semiconductor/metal configuration were fabricated. The design of interdigitated circular electrodes enables high homogeneity of electric field between pads. The DUV photodetectors present a peak responsivity at 180nm with a very sharp cutoff wavelength at 193nm and a visible rejection ratio (180 versus 250nm) of more than four orders of magnitude. The characteristics of the photodetectors present extremely low dark current, high breakdown voltage, and high responsivity, suggesting that cBN films are very promising for DUV sensing.

Direct Electrochemistry and Electrocatalytic Activity of Cytochrome c Covalently Immobilized on a Boron-Doped Nanocrystalline Diamond Electrode

Cytochrome c (Cyt c) was covalently immobilized on a boron-doped nanocrystalline diamond (BDND) electrode via surface functionalization with undecylenic acid methyl ester and subsequent removal of the protecting ester groups to produce a carboxyl-terminated surface. Cyt c-modified BDND electrode exhibited a pair of quasi-reversible and well-defined redox peaks with a formal potential (E(0)) of 0.061 V (vs Ag/AgCl) in 0.1 M phosphate buffer solution (pH 7.0) and a surface-controlled process with a high electron transfer constant (ks) of 5.2 +/- 0.6 s(-1). The electrochemical properties of as-deposited and Cyt c-modified boron-doped microcrystalline diamond (BDMD) electrodes were also studied for comparison. Investigation of the electrocatalytic activity of the Cyt c-modified BDND electrode toward hydrogen peroxide (H2O2) revealed a rapid amperometric response (5 s). The linear range of response to H2O2 concentration was from 1 to 450 microM, and the detection limit was 0.7 microM at a signal-to-noise ratio of 3. The stability of the Cyt c-modified BDND electrode, in comparison with that of the BDMD and glassy carbon counterpart electrodes, was also evaluated.

Electrical properties of Be-implanted polycrystalline cubic boron nitride films

P-type conductivity of polycrystalline cubic boron nitride (cBN) films was achieved by implantation of beryllium ions. The effects of implantation doses and annealing on the phase composition and electrical properties of cBN films were studied. A reduction in resistivity by seven orders of magnitude was observed. Hall measurement revealed a corresponding hole concentration of 6.1×1018cm−3 and mobility of 3cm2∕Vs. The activation energy was estimated to be 0.20±0.02eV from the temperature dependence of resistance. The electrical properties of Be-implanted films are comparable to that of Be-doped cBN single crystals synthesized by high-pressure and high-temperature method.

Photoemission spectroscopic study of nitrogen-incorporated nanocrystalline diamond films

The variation of composition and chemical bonding structures of the nanocrystalline diamond (ND) films induced by nitrogen incorporation in CH4(10%)∕H2∕N2 plasmas was investigated by x-ray photoelectron spectroscopy. The sp2∕sp3 phase ratio of hybridized carbon bonds in ND films was shown to depend strongly on the nitrogen concentration in plasma, coinciding with Raman observations. The depth profile analysis, however, revealed only about 1at.% of nitrogen in all samples, suggesting that the variation of conductivity of ND films is mainly associated with the development of highly ordered graphitic sp2 phase induced by the nitrogen incorporation.

The fabrication of cubic boron nitride nanocone and nanopillar arrays via reactive ion etching

High-density (2 x 10(9) cm(-2)) uniform arrays of cubic boron nitride (cBN) nanocones and nanopillars with a high aspect ratio were fabricated by employing sequential growth and bias-assisted reactive ion etching using gold nano-dots as an etching mask. The mechanism of formation of the nanopillar and nanocone morphologies was discussed in terms of the relative action of ion bombardment etching and chemical etching due to activated hydrogen plasma constituents. The presented method enabled nanostructuring of cBN surfaces over large areas with great uniformity and reproducibility with a controlled aspect ratio. The unique morphology of the nanostructures offers diverse application opportunities in microelectromechanical devices.

Surface functionalization of cubic boron nitride films for biological sensing applications

Surface functionalization and modification scheme of cubic boron nitride (cBN) films deposited by chemical vapor deposition was demonstrated. A homogeneous layer of amino groups was bonded covalently on the B and/or N atoms of cBN surface via a photochemical reaction with allylamine. X-ray photoelectron spectroscopy was carried out to verify comprehensively each stage of the surface modification process. Gold nanoparticles (AuNPs) were self-assembled on the amine-terminated cBN surface, and a dense and well-distributed AuNPs monolayer was obtained. Modification of amine-terminated cBN films with amine-modified DNA probes presents an example of applications as DNA biosensors.

A cubic boron nitride film-based fluorescent sensor for detecting Hg2+

Cubic boron nitride (cBN) film-based sensors for detecting Hg2+ ions were developed by surface functionalization with dansyl chloride. To immobilize dansyl chloride, 3-aminopropyltriethoxy silane was modified on hydroxylated cBN surfaces to form an amino-group-terminated self-assembled monolayer. The covalent attachment of the amino groups was confirmed by x-ray photoelectron spectroscopy. The selectivity and sensitivity of the sensors to detect diverse metal cations in ethanol solutions were studied by using fluorescence spectroscopy, revealing a great selectivity to Hg2+ ions. Significantly, the dansyl-chloride-functionalized cBN film sensors were recyclable after the sensing test.

Nanocubic boron nitride/nanodiamond multilayer structures

Nanocubic boron nitride/nanodiamond (N-cBN/ND) multilayer structures with each alternating layer being ∼100nm thick have been prepared by magnetron sputter and microwave plasma enhanced chemical vapor depositions. These multilayers exhibit remarkable properties, in particular, the mechanical properties. The multilayer structure is characteristic with (i) extreme hardness (82GPa) considerably surpassing the values of the individual materials from which the multilayer is composed, (ii) high surface smoothness, (iii) significantly reduced film stress when compared with a single cBN layer of equivalent thickness, and (iv) great chemical stability. The N-cBN/ND multilayers developed have therefore important implications in mechanical and chemically resistant applications.

Microstructure analysis of c-axis oriented aluminum nitride thin films by high-resolution transmission electron microscopy

The microstructure, in particular, the surface and interface regions, of the c-axis orientated AlN films deposited on Si (100) substrates was studied. The films showed an evolutionary columnar growth process. In contrast to the previous reports, high-resolution transmission electron microscopy revealed that the AlN films grew directly on substrates without an amorphous interlayer, despite the large lattice mismatch between AlN and Si. The occurrence of misoriented and/or amorphous top layer suggested a subsurface growth/relaxation process of the AlN films by reactive sputtering.