Y.T. Yang

Observations with a mid-plane reciprocating probe in MAST

A fast reciprocating probe has recently been installed on MAST. It has been used to measure the outboard, mid-plane scrape off layer (SOL) of L-mode plasmas, and to study the intermittent fluctuations in the SOL in L-mode and ELMy H-mode discharges. In this paper, the system and the experiments are introduced.

The effects of Xe irradiation on He and H co-implanted Si

A combination of X-ray diffraction, cross-sectional transmission electron microscopy (XTEM), and Raman spectroscopy was used to study the effects of irradiation with swift heavy ions on helium and hydrogen co-implanted silicon.<100>-oriented silicon wafers were co-implanted with 30 keV helium to a dose of 3×1016He+/cm2 and 24 keV protons to a dose of 2×1016 H+/cm2. Moreover, selected helium and hydrogen co-implanted Si wafers were irradiated with 94 MeV xenon. After He and H co-implantation and Xe-irradiation, the wafers were annealed at a temperature of 673 K for 30 min. The damage region of the wafers was examined by the XTEM analysis. The results reveal that most of the platelets are aligned parallel to the (100) plane in the He and H co-implanted Si. However, majority of the platelets lie in111planes after Xe irradiation. Blisters do not occur on the sample surface after Xe irradiation. Raman results reveal that the intensities of both SiH2 and V2H6 modes increase with the increase in the dose of Xe. A possible explanation is that strong electronic excitation during Xe irradiation produces annealing effect, which reduces both lattice damage and the out-of-plane tensile strain.

Damage to epitaxial GaN layer on Al 2 O 3 by 290-MeV 238 U 32+ ions irradiation

Micro-structural characteristics and electrical properties of an n-type GaN epilayer on Al2O3 irradiated by 290-MeV 238U32+ ions to various fluences were investigated using atomic force microscopy (AFM), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HRXRD), and Raman scattering spectroscopy. AFM images show that the nano-hillocks generated, and the diameter and density of the nano-hillocks, increase obviously with increasing ion fluence, accompanied by an increase in surface roughness. SEM images display that the Al, O, and C elements appear on the GaN surface, along with a spiral-like, layered volcanic-cone structure formed at the highest-fluence irradiation. HRXRD reveals that the dislocation density increases, as the lattices gradually expand, and that Ga2O3 was produced with increasing ion fluence. Raman scattering spectra show that no N and Ga vacancies were produced, the free-carrier concentration decreases, while its mobility first increases and then exhibits a significant reduction with increasing ion fluence.

Secondary Electron Yield of Nano-Thick Aluminum Oxide and its Application on MCP Detector

Nano-thick aluminum oxide thin film was deposited by atomic layer deposition (ALD) technique. The secondary electron properties of such thin film have been studied by pulsed-yield measurement. Conventional lead glass microchannel plate (MCP) was coated with such thin film. The gain, the single electron resolution and the peak-to-valley ratio of the new MCP detector were improved.