Y. Tateyama
University of Tokyo
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Publication
Featured researches published by Y. Tateyama.
Physical Review B | 2007
T. Susaki; Y. Kozuka; Y. Tateyama; Harold Y. Hwang
We have observed temperature-dependent reversal of the rectifying polarity in
Physical Review B | 2007
T. Susaki; Y. Kozuka; Y. Tateyama; Harold Y. Hwang
\mathrm{Au}∕\mathrm{Nb}:\mathrm{Sr}\mathrm{Ti}{\mathrm{O}}_{3}
Physical Review B | 2007
T. Susaki; Y. Kozuka; Y. Tateyama; Harold Y. Hwang
Schottky junctions. By simulating current-voltage characteristics, we have found that the permittivity of
Physical Review B | 1997
Y. Tateyama; Tadashi Ogitsu; Koichi Kusakabe; Shinji Tsuneyuki; Satoshi Itoh
\mathrm{Sr}\mathrm{Ti}{\mathrm{O}}_{3}
Physical Review B | 1996
Y. Tateyama; Tadashi Ogitsu; Koichi Kusakabe; S. Tsuneyuki
near the interface exhibits temperature dependence opposite to that observed in the bulk, significantly reducing the barrier width. At low temperature, tunneling current dominates the junction transport due both to such barrier narrowing and to suppressed thermal excitations. The present results demonstrate that junction properties can be dominated by the interface permittivity.
Physical Review B | 1998
Tadashi Ogitsu; T. M. Briere; Koichi Kusakabe; Shinji Tsuneyuki; Y. Tateyama
We have observed temperature-dependent reversal of the rectifying polarity in
The Review of High Pressure Science and Technology | 1998
Koichi Kusakabe; Y. Tateyama; Tadashi Ogitsu; S. Tsuneyuki
\mathrm{Au}∕\mathrm{Nb}:\mathrm{Sr}\mathrm{Ti}{\mathrm{O}}_{3}
The Review of High Pressure Science and Technology | 2000
Y. Tateyama
Schottky junctions. By simulating current-voltage characteristics, we have found that the permittivity of
The Review of High Pressure Science and Technology | 1998
Y. Tateyama; Tadashi Ogitsu; Koichi Kusakabe; S. Tsuneyuki
\mathrm{Sr}\mathrm{Ti}{\mathrm{O}}_{3}
The Review of High Pressure Science and Technology | 1998
Shinji Tsuneyuki; Y. Tateyama
near the interface exhibits temperature dependence opposite to that observed in the bulk, significantly reducing the barrier width. At low temperature, tunneling current dominates the junction transport due both to such barrier narrowing and to suppressed thermal excitations. The present results demonstrate that junction properties can be dominated by the interface permittivity.