Y.V. Gomeniuk

Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs

Abstract Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO 2 interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp decrease of the current in the subthreshold mode of transistor operation.

Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors

Abstract In this article, investigations of low-temperature operation of n-channel accumulation mode SOI MOSFET are reported. It has been shown that the charge state of shallow traps situated in the thin transition layer between the gate oxide and silicon overlayer affects the transistor characteristics at temperatures below 20 K, giving rise to peaks in transconductance.

Electrical characterization of the amorphous SiC-pSi structure

Abstract Forward and reverse currents in the amorphous SiC pSi structure were studied in the temperature range from 30 to 80 K. Charging of electron traps located in the SiC layer increases the forward current due to reduction of the potential barrier for holes. The current was found to be controlled by the Poole-Frenkel emission via the system of levels in the SiC layer located at 0.048 eV and 0.065 eV above the edge of the valence band.

Thermally stimulated characterization of shallow traps in the SiC/Si heterojunction

The thermally stimulated charge release (TSCR) technique was used for investigations of shallow traps in SiC/Si heterojunctions. The TSCR currents were found to consist of two parts manifested in different temperature ranges. The lower-temperature peak, with the maximum at about 15 K, was attributed to the shallow traps situated in the thin transition layer at the SiC/Si interface and was similar to that observed for the interface. Activation energies of the release process are in the range 18-55 meV. The broad higher-temperature peak, associated with the deeper electron traps located in the SiC layer, was observed in the temperature range 40-160 K. The activation energies of these traps lie in the range 0.016-0.22 eV.

Cryogenic Investigations of SIMOX Buried Oxide Parameters

Substrates containing buried dielectric prepared by separation by implantation of oxygen (SIMOX) are promising for use in complementary metal oxide semiconductor (CMOS) applications where the reduced capacitance and high packing density of the MOS devices allow to reach higher operation speed and lower power consumption. The stability and long-term reliability of devices based on SIMOX technology are limited by the electrical properties of the buried oxide (BOX), especially, of silicon film—buried oxide and buried oxide-silicon substrate interfaces. It was mentioned in [1] that at low temperatures the role of hot carrier effects greatly increases, which can lead to device degradation, especially for interfaces with poor electrical properties. So, in order to take full advantage of the attractive features of this technology, the aforementioned properties require more research. Low temperature measurements make it possible to study shallow interface levels with activation energies of some meV situated in the thin nonstoichiometric transition layer. These traps are responsible for hysteresis of n-channel transistor drain characteristics at low temperatures [2]. In this paper, we present further insight into the trapping properties of the buried oxide.

Effect of Shallow Oxide Traps on the Low-Temperature Operation of SOI Transistors

In this paper investigations of low-temperature operation of n-channel accumulation mode SOI MOSFET are reported. It has been shown that the charge state of shallow traps situated in the thin transition layer between the gate oxide and silicon overlayer affects the transistor characteristics at temperatures below 20 K, giving rise to the peaks in transconductance.

Flux pinning under the strong electrostatic field in the BiPbSrCaCuO film

Abstract Three different regimes of thermally activated dissipation were observed in the superconducting ( (Bi,Pb) 2 Sr 2 Ca 2 Cu 3 O x film at different external magnetic fields. The negative electrostatic field applied to the film surface has been found to increase the activation energy of the flux creep at relatively low magnetic fields.

Investigation of taps in the niSiC-pSi interface at cryogenic temperatures

Abstract A new method for characterisation of SiCSi interface based on measurements of thermally stimulated charge release and of thermal dielectric relaxation current in the temperature range from 5 to 30 K is presented. Activation energies of shallow traps in the transition region of the SiCSi interface were found to be the same as in the SiO2Si interface.

Electric field effect on excess conductivity in high-Tc superconductors

Abstract The negative electrostatic field applied to the surface of BiPbSrCaCuO thin film was found to increase both the superconducting transition temperature T c and the amplitude of fluctuation enhanced excess conductivity in the vicinity of T c .