Y Yuqing Jiao

An introduction to InP-based generic integration technology

Photonic integrated circuits (PICs) are considered as the way to make photonic systems or subsystems cheap and ubiquitous. PICs still are several orders of magnitude more expensive than their microelectronic counterparts, which has restricted their application to a few niche markets. Recently, a novel approach in photonic integration is emerging which will reduce the R&D and prototyping costs and the throughput time of PICs by more than an order of magnitude. It will bring the application of PICs that integrate complex and advanced photonic functionality on a single chip within reach for a large number of small and larger companies and initiate a breakthrough in the application of Photonic ICs. The paper explains the concept of generic photonic integration technology using the technology developed by the COBRA research institute of TU Eindhoven as an example, and it describes the current status and prospects of generic InP-based integration technology.

Integrated Tunable Quantum-Dot Laser for Optical Coherence Tomography in the 1.7

In this paper, we present the design and characterization of a monolithically integrated tunable laser for optical coherence tomography in medicine. This laser is the first monolithic photonic integrated circuit containing quantum-dot amplifiers, phase modulators, and passive components. We demonstrate electro-optical tuning capabilities over 60 nm between 1685 and 1745 nm, which is the largest tuning range demonstrated for an arrayed waveguide grating controlled tunable laser. Furthermore, it demonstrates that the active-passive integration technology designed for the 1550 nm telecom wavelength region can also be used in the 1600-1800 nm region. The tunable laser has a 0.11 nm effective linewidth and an approximately 0.1 mW output power. Scanning capabilities of the laser are demonstrated in a free space Michelson interferometer setup where the laser is scanned over the 60 nm in 4000 steps with a 500 Hz scan frequency. Switching between two wavelengths within this 60 nm range is demonstrated to be possible within 500 ns.

\mu{\rm m}

Recently, the desired very high throughput of 5G wireless networks drives millimeter-wave (mm-wave) communication into practical applications. A phased array technique is required to increase the effective antenna aperture at mm-wave frequency. Integrated solutions of beamforming/beam steering are extremely attractive for practical implementations. After a discussion on the basic principles of radio beam steering, we review and explore the recent advanced integration techniques of silicon-based electronic integrated circuits (EICs), photonic integrated circuits (PICs), and antenna-on-chip (AoC). For EIC, the latest advanced designs of on-chip true time delay (TTD) are explored. Even with such advances, the fundamental loss of a silicon-based EIC still exists, which can be solved by advanced PIC solutions with ultra-broad bandwidth and low loss. Advanced PIC designs for mm-wave beam steering are then reviewed with emphasis on an optical TTD. Different from the mature silicon-based EIC, the photonic integration technology for PIC is still under development. In this paper, we review and explore the potential photonic integration platforms and discuss how a monolithic integration based on photonic membranes fits the photonic mm-wave beam steering application, especially for the ease of EIC and PIC integration on a single chip. To combine EIC, for its accurate and mature fabrication techniques, with PIC, for its ultra-broad bandwidth and low loss, a hierarchical mm-wave beam steering chip with large-array delays realized in PIC and sub-array delays realized in EIC can be a future-proof solution. Moreover, the antenna units can be further integrated on such a chip using AoC techniques. Among the mentioned techniques, the integration trends on device and system levels are discussed extensively.

Wavelength Region

InP integrated photonics has become a critical enabler for modern telecommunications, and is poised to revolutionize data communications, precision metrology, spectrometry, and imaging. The possibility to integrate high-performance amplifiers, lasers, modulators, and detectors in combination with interferometers within one chip is enabling game-changing performance advances, energy savings, and cost reductions. Generic integration accelerates progress through the separation of applications from a common technology development. In this paper, we review the current status in InP integrated photonics and the efforts to integrate the next generation of high-performance functionality on a common substrate using the generic methodology.

Advanced Integration Techniques on Broadband Millimeter-Wave Beam Steering for 5G Wireless Networks and Beyond

In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C60 fullerene. The addition of C60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3  dB/cm has been demonstrated.

InP photonic circuits using generic integration [Invited]

A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 μm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon.

Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices

Area-selective atomic layer deposition (AS-ALD) of platinum (Pt) was studied using photosensitive polyimide as a masking layer. The polyimide films were prepared by spin-coating and patterned using photolithography. AS-ALD of Pt using poly(methyl-methacrylate) (PMMA) masking layers was used as a reference. The results show that polyimide has excellent selectivity towards the Pt deposition, after 1000 ALD cycles less than a monolayer of Pt is deposited on the polyimide surface. The polyimide film could easily be removed after ALD using a hydrogen plasma, due to a combination of weakening of the polyimide resist during Pt ALD and the catalytic activity of Pt traces on the polyimide surface. Compared to PMMA for AS-ALD of Pt, polyimide has better temperature stability. This resulted in an improved uniformity of the Pt deposits and superior definition of the Pt patterns. In addition, due to the absence of reflow contamination using polyimide the nucleation phase during Pt ALD is drastically shortened. Pt patterns down to 3.5 μm were created with polyimide, a factor of ten smaller than what is possible using PMMA, at the typical Pt ALD processing temperature of 300 °C. Initial experiments indicate that after further optimization of the polyimide process Pt features down to 100 nm should be possible, which makes AS-ALD of Pt using photosensitive polyimide a promising candidate for patterning at the nanoscale.

High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

Grating couplers are widely used to couple light between photonic integrated circuits and optical fibers. Here, we fabricate and characterize a device based on a buried metal grating. In contrast to dielectric gratings, simulations predict strongly reduced parasitic leakage of light to the substrate and are performance independent of the optical buffer thickness, while using standard fabrication processes with high yield. The gratings show a 3 dB bandwidth of 61 nm and chip-to-fiber coupling efficiency of 54%, which makes them attractive building blocks for on-wafer testing and dense optical interconnects.

Area-selective atomic layer deposition of platinum using photosensitive polyimide

A new photonic integration technique is presented, based on the use of an indium phosphide membrane on top of a silicon chip. This can provide electronic chips (CMOS) with an added optical layer (IMOS) for resolving the communication bottleneck. A major advantage of InP is the possibility to integrate passive and active components (SOAs, lasers) in a single membrane. In this paper we describe progress achieved in both the passive and active components. For the passive part of the circuit we succeeded to bring the propagation loss of our circuits close to the values obtained with silicon; we achieved propagation loss as low as 3.3 dB/cm through optimization of the lithography and the introduction of C60 (fullerene) in an electro resist. Further we report the smallest polarisation converter reported for membrane waveguides ( <10 μm) with low-loss (< 1 dB from 1520- 1550 nm), > 95% polarisation conversion efficiency over the whole C-band and tolerant fabrication. We also demonstrate an InP-membrane wavelength demultiplexer with a loss of 2.8 dB, a crosstalk level of better than 18 dB and a uniformity over the 8 channels of better than 1.2 dB. For the integration of active components we are testing a twin guide integration scheme. We present our design based on optical and electrical simulations and the fabrication techniques.

Realization of efficient metal grating couplers for membrane-based integrated photonics

A hybrid fiber-wireless in-home network is proposed to support high-speed multiple input and multiple output (MIMO) orthogonal frequency division multiplexing systems operating at millimeter wave (mm-wave) band by employing optical heterodyne (OH) and polarization multiplexing (PolMux). OH enables the optical generation of mm-wave signals without the intrinsic frequency limitation of electrical local oscillators. Moreover, the frequency agility can be provided by tuning the optical wavelength in an OH system. PolMux explores two orthogonal polarizations at the same optical wavelength to satisfy the wireless MIMO service with low additional cost. Enabled by these techniques, the fiber transmission (1 km) and wireless delivery (1 m) of 61.3-Gbps data at 40-GHz mm-wave are successfully demonstrated. To the best of our knowledge, a record spectral efficiency of 6.82 bit/s/Hz is achieved in such kind of systems.