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Dive into the research topics where Yagya Deva Sharma is active.

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Featured researches published by Yagya Deva Sharma.


Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies | 2003

Characterization of Ag-Sb-Te alloy and their films for phase-change optical memories

Yagya Deva Sharma; P. K. Bhatnagar

Ag-Sb-Te alloy and films are developed as Optical recording material based on amorphous - crystalline phase transformation. The crystallization process of Ag-Sb-Te films is systematically studied through measurement of recording characteristics to solve the trade off problem between data stability and erasing sensitivity. Phase change optical recording disks have been found to demonstrate long thermal stability of the amorphous recording marks. In the present work, preparation and characterization of the chalcogenide alloy Ag x - Sb 2(1-x) - Te3(1-x) with different composition (x = 0.16, 0.18 and 0.20) has been presented. Samples were prepared using melt quenching technique and the films were grown by thermal evaporation system. The thermal Characterization of Ag-Sb-Te material was studied using differential thermal analysis (DTA) and Optical Characterization (Transmittance and reflectance) respectively. The films were studied for both cases: before and after annealing. The Differential thermal analysis curves were recorded for different compositions and glass transition temperature (Tg), crystallization temperature (Tc) and melting temperature (Tm) have been obtained. It may also be concluded that Tg/Tm ratio is closer to required condition for the phase change optical data storage material. Thermal and optical Characterization shows that the Ag-Sb-Te material is a potential candidate for phase change optical memory application. The optimized composition has also been obtained.


Optical Engineering | 2002

Structural and thermal analysis of Ag-Sb-Te alloy and its films for phase change optical memories

Yagya Deva Sharma; P. K. Bhatnagar

An Ag-Sb-Te alloy and its films are prepared as a new optical recording amorphous crystalline (a?c) phase transformation material. The crystallization process of Ag-Sb-Te films is systematically studied through measurement of recording characteristics to solve the trade-off problem between data (amorphous) stability and erasing sensitivity. phase change optical recording disks demonstrate long thermal stability of the amorphous recording marks. The crystallization process of Ag- Sb-Te material was studied using differential thermal analysis (DTA), and the nature of the material was studied by x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM), respectively. The films were studied for both cases of before and after annealing. It was concluded that the alloy (Ag-Sb-Te) could be used as a phase change optical memory material.


Advanced Characterization Techniques for Optical, Semiconductor, and Data Storage Components | 2002

Ag-Sb-Te system for phase change optical data storage

Yagya Deva Sharma; P. K. Bhatnagar

For phase change optical data storage, several chalcogenide-based materials have been reported and are expected to replace the conventional magnetic disk. In the present work, preparation and characterization of the chalcogenide allow Agx - Sb 2(1-x) - Te 3(1-x) with different composition (x = 0.16, 0.18 and 0.20) has been presented. Samples were prepared using melt quenching technique and the films were grown by thermal evaporation system. The crystallization process of Ag- Sb- Te material was studied using differential thermal analysis (DTA) and Optical analysis (Transmittance and reflectance) respectively. The films were studied for both cases: before and after annealing. The Differential thermal analysis curves were recorded for different compositions and Glass transition temperature (Tg), crystallization temperature (Tc) and melting temperature (Tm) have been obtained. It may also be concluded that Tg/Tm ratio is closer to required condition for phase change optical data storage material. Thermal and optical analysis shows that the Ag - Sb- Te material is a potential candidate for phase change optical data storage. The optimized composition has also been obtained.


Journal of Optics | 2001

Preparation and Analysis of the New Chalcogenide Alloy for Optical Memory Application

Yagya Deva Sharma; Laxman Singh; P. K. Bhatnagar

Ag-Sb-Te alloy and films are developed as optical recording material based on amorphous crystalline phase transformation. The crystallization process of Ag-Sb-Te films is systematically studied through measurement of recording characteristics to solve the trade off problem between data (amorphous) stability and erasing sensitivity-Phase change optical recording marks. The crystallization process of Ag-Sb-Te material was studied using Differential Thermal Analysis (DTA) and nature of the material were studied by X.Ray Diffraction (XRD), Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) respectively. The films were studied for both the cases:before and after annealing and it was concluded that the alloy (Ag-Sb-Te) could be used as a phase change optical memory material.


Optical Science and Technology, the SPIE 49th Annual Meeting | 2004

Chalcogenide-based system and its thin films for phase change optical data storage

Yagya Deva Sharma; P. K. Bhatnagar

Over recent years the demand for optical data storage devices with high speed has become increasingly more evident. Phase change optical storage is based on the rapid crystalline to amorphous (and vice versa) transition in a thin phase change layer enabled by laser induced heating. Among some of the potential candidates, AgSbTe alloy appears to be one of the latest promising materials that have drawn worldwide attention. Using this material as the active layer has other advantages such as the problem of material flow is reduced to a great extent. Moreover the marks written in AgSbTe based media have a well defined shape with sharp edges, leading to intrinsically lower jitter values than observed for GeSbTe based media. In the present work Ag x-Sb 2 (1-x)-Te 3 (1-x) alloys and films are developed for different composition. The present work describes the systematic study of thermal, structural and optical properties of amorphous Ag-Sb-Te system


Test and Measurement Applications of Optoelectronic Devices | 2002

Crystallization process of Ag-Sb-Te alloy and films for phase-change optical data storage

Yagya Deva Sharma; P. K. Bhatnagar

Ag-Sb-Te alloy and films are developed as Optical recording material based on amorphous-crystalline phase transformation. The crystallization process of Ag-Sb-Te films is systematically studied through measurement of recording characteristics to solve the trade off problem between data stability and erasing sensitivity. Phase change optical recording disks have been found to demonstrate long thermal stability of the amorphous recording marks. In the present work, preparation and characterization of the chalcogenide allow Agx - Sb2(1-x) - Te3(1-x) with different composition (xequals0.16, 0.18 and 0.20) has been presented. Samples were prepared using melt quenching technique and the films were grown by thermal evaporation system. The crystallization process of Ag-Sb-Te material was studied using differential thermal analysis (DTA) and Optical analysis (Transmittance and reflectance) respectively. The films were studied for both cases: before and after annealing. The Differential thermal analysis curves were recorded for different compositions and Glass transition temperature (Tg), crystallization temperature (Tc) and melting temperature (Tm) have been obtained. It may also be concluded that Tg/Tm ratio is closer to required condition for the phase change optical data storage material. Thermal and optical analysis shows that the Ag-Sb-Te material is a potential candidate for phase change optical data storage. The optimized composition has also been obtained.


Semiconductor optoelectronic device manufacturing and applications. Conference | 2001

Structural analysis of a new phase change optical memory material: Ag-Sb-Te

Yagya Deva Sharma; P. K. Bhatnagar

Phase change optical recording disks using have been found to demonstrate long stability of the amorphous recording marks. Structural analysis of the material were studied by X Ray Diffraction (XRD), Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) respectively. The films were studied for both the cases: before and after annealing and it was concluded that the alloy (Ag-Sb-Te) could be used as a phase change optical memory material.


Proceedings of SPIE, the International Society for Optical Engineering | 2001

New chalcogenide alloy as phase-change optical recording material

Yagya Deva Sharma; Laxman Singh; P. K. Bhatnagar

Phase change optical recording disks using chalcogenide alloy Ag-Sb-Te have been found to demonstrate long thermal stability of the amorphous recording marks. The crystallization process and nature of Ag-Sb-Te material were studied using Differential Thermal Analysis (DTA) and X Ray Diffraction (XRD) respectively. The films were studied for both the cases: before and after annealing and it was concluded that the alloy (Ag-Gb-Te) can be used as a phase change optical memory material.


Design, Fabrication, and Characterization of Photonic Devices II | 2001

Structural and thermal analysis of a new phase-change optical memory material: Ag-Sb-Te

Yagya Deva Sharma; Chhavi Bhatnagar; P. K. Bhatnagar

Phase change optical recording disks using have been found to demonstrate long thermal stability of the amorphous recording marks. The thermal analysis of Ag-Sb-Te material was studied using DTA and structural analysis of the material were studied by x-ray diffraction, SEM and TEM respectively. The films were studied for both the cases: before and after annealing and it was concluded that the alloy could be used as a phase change optical memory material.


international workshop on physics of semiconductor devices | 2002

Theoretical model for estimating surface recombination velocity of polycrystalline CIGS solar cells

Lakshman Singh; Praveen Pandey; Yagya Deva Sharma; Chhavi Bhatnagar; P. K. Bhatnagar

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Praveen Pandey

Central Drug Research Institute

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