Yan-Jun Wang

Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

Strained AlGaInP/GaInP multiple-quantum-well laser structures have been grown by metalorganic chemical vapor deposition using teriarybutylphosphine as the phosphorus precursor and ridge waveguide lasers of 4 μm wide have been fabricated. Room temperature continuous-wave lasing has been obtained with an emission wavelength of about 670 nm. A single-facet output power of more than 18 mW has been achieved for an as-cleaved laser chip. It can be concluded that it is feasible to fabricate AlGaInP red lasers using less toxic metalorganic source tertiarybutylphosphine in parallel with conventionally used highly toxic PH3.

Distributed Bragg reflector laser using buried SiO2 grating and self-aligned band gap tuning

The authors report a technology to make a distributed Bragg reflector laser with buried dielectric grating and band gap tuned reflector region. The Bragg reflector is constructed by high coupling coefficient gratings made of SiO2 and InP. The band gap of the reflector is blueshifted by self-aligned quantum well intermixing using the buried SiO2 grating itself. The photoluminescence peak wavelength can be shifted by ∼45meV for the quantum well sample covered by SiO2 grating compared to thermal shift only at annealing temperature of 800°C for 100s. The enhanced interdiffusion is caused by the P vacancies generated at SiO2 and InP interfaces as proved by secondary ion mass spectroscopy.

650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

Using tertiarybutylphosphine (TBP) as phosphorus precursor, high-quality AlGaInP epilayers and AlGaInP/GaInP multiple-quantum-well (MQW) structures have been grown by metalorganic chemical vapor deposition. The photoluminescence results indicate that the AlGaInP materials are as good as those grown using PH3 in terms of optical quality. Finally, AlGaInP MQW red laser structures have been grown, and the electrically pumped AlGaInP red lasers grown by TBP have been demonstrated with the emission wavelength of 647 nm, indicating that TBP can be used to grow high-quality AlGaInP epilayers and AlGaInP-based red lasers, which presently is dominated by the highly toxic gas source PH3.