Yanfei Zhao
Peking University
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Featured researches published by Yanfei Zhao.
Chinese Physics Letters | 2014
Wenhao Zhang; Yi Sun; Jinsong Zhang; F. Li; Minghua Guo; Yanfei Zhao; H. Zhang; J. Peng; Ying Xing; Huichao Wang; Takeshi Fujita; Akihiko Hirata; Zhi Li; Hao Ding; Chenjia Tang; Meng Wang; Qingyan Wang; Ke He; Shuai-Hua Ji; Xi Chen; Junfeng Wang; Zhengcai Xia; Liang Li; Yayu Wang; Jian Wang; Lili Wang; Mingwei Chen; Qi-Kun Xue; Xucun Ma
We prepared one-unit-cell (1-UC) thick FeSe films on insulating SrTiO3 substrates with non-superconducting FeTe protection layers by molecular beam epitaxy for ex situ studies. By direct transport and magnetic measurements, we provide definitive evidence for high temperature superconductivity in the 1-UC FeSe films with an onset TC above 40 K and an extremely large critical current density JC~1.7×106 A/cm2 at 2 K, which are much higher than TC~8 K and JC~104 A/cm2 for bulk FeSe, respectively. Our work may pave the way to enhancing and tailoring superconductivity by interface engineering.
Journal of the American Chemical Society | 2014
Jingyu Sun; Teng Gao; Xiuju Song; Yanfei Zhao; Yuanwei Lin; Huichao Wang; Donglin Ma; Yubin Chen; Wenfeng Xiang; Jian Wang; Yanfeng Zhang; Zhongfan Liu
High-quality monolayer graphene was synthesized on high-κ dielectric single crystal SrTiO3 (STO) substrates by a facile metal-catalyst-free chemical vapor deposition process. The as-grown graphene sample was suitable for fabricating a high performance field-effect transistor (FET), followed by a far lower operation voltage compared to that of a SiO2-gated FET and carrier motilities of approximately 870-1050 cm(2)·V(-1)·s(-1) in air at rt. The directly grown high-quality graphene on STO makes it a perfect candidate for designing transfer-free, energy-saving, and batch production of FET arrays.
Physical Review B | 2015
Yanfei Zhao; Haiwen Liu; Jiaqiang Yan; Wei An; Jun Liu; Xi Zhang; Huichao Wang; Yi Liu; Hua Jiang; Qing Li; Yong Wang; Xin-Zheng Li; David Mandrus; X. C. Xie; Minghu Pan; Jian Wang
Recently, the WTe2 semimetal, as a typical layered transition-metal dichalcogenide, attracted much attention due to an extremely large, non-saturating parabolic magnetoresistance in the perpendicular field. Here, we report a systematic study of the angular dependence of the magnetoresistance in a WTe2 single crystal. The significant anisotropic magnetotransport behavior in different magnetic field directions and violation of the Kohlers rule are observed. Unexpectedly, when the applied field and excitation current are both parallel to the tungsten chains of WTe2, an exotic large longitudinal linear magnetoresistance as high as 1200% at 15T and 2K is identified. These results imply that the WTe2 semimetal, due to its balanced hole and electron populations, seems to be the first material for which a large longitudinal linear magnetoresistance appears when the external magnetic field is parallel to the applied current. Finally, our work may stimulate studies of double-carrier correlated materials and the corresponding quantum physics.
Scientific Reports | 2015
Yi Sun; Wenhao Zhang; Ying Xing; F. Li; Yanfei Zhao; Zhengcai Xia; Lili Wang; Xucun Ma; Qi-Kun Xue; Jian Wang
Interface enhanced superconductivity at two dimensional limit has become one of most intriguing research directions in condensed matter physics. Here, we report the superconducting properties of ultra-thin FeSe films with the thickness of one unit cell (1-UC) grown on conductive and insulating SrTiO3 (STO) substrates. For the 1-UC FeSe on conductive STO substrate (Nb-STO), the magnetization versus temperature (M-T) measurement shows a drop crossover around 85 K. For the FeSe films on insulating STO substrate, systematic transport measurements were carried out and the sheet resistance of FeSe films exhibits Arrhenius TAFF behavior with a crossover from a single-vortex pinning region to a collective creep region. More intriguing, sign reversal of Hall resistance with temperature is observed, demonstrating a crossover from hole conduction to electron conduction above TC in 1-UC FeSe films.
Scientific Reports | 2013
Yanfei Zhao; Cui-Zu Chang; Ying Jiang; Ashley DaSilva; Yi Sun; Huichao Wang; Ying Xing; Yong Wang; K e He; Xucun Ma; Qi-Kun Xue; Jian Wang
In spite of much work on topological insulators (TIs), systematic experiments for TI/TI heterostructures remain absent. We grow a high quality heterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs of Bi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLs Bi2Te3. All three films are grown on insulating sapphire (0001) substrates by molecular beam epitaxy (MBE). In situ angle-resolved photoemission spectroscopy (ARPES) provides direct evidence that the surface state of 1 QL Bi2Se3/19 QLs Bi2Te3 heterostructure is similar to the surface state of the 20 QLs Bi2Se3 and different with that of the 20 QLs Bi2Te3. In ex situ transport measurements, the observed linear magnetoresistance (MR) and weak antilocalization (WAL) of the hybrid heterostructure are similar to that of the pure Bi2Se3 film and not the Bi2Te3 film. This suggests that the single Bi2Se3 layer on top of 19 QLs Bi2Te3 dominates its transport properties.
Scientific Reports | 2015
Huichao Wang; Haiwen Liu; Cui-Zu Chang; Huakun Zuo; Yanfei Zhao; Yi Sun; Zhengcai Xia; Ke He; Xucun Ma; X. C. Xie; Qi-Kun Xue; Jian Wang
We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the bulk conduction band above the Dirac point, suggesting important contribution of bulk states to the transport results. In particular, the crossover from weak antilocalization to weak localization in the bulk states is observed in the parallel magnetic field measurements up to 50 Tesla. The measured magneto-resistance exhibits interesting anisotropy with respect to the orientation of parallel magnetic field B// and the current I, signifying intrinsic spin-orbit coupling in the Bi2Se3 films. Our work directly shows the crossover of quantum interference effect in the bulk states from weak antilocalization to weak localization. It presents an important step toward a better understanding of the existing three-dimensional topological insulators and the potential applications of nano-scale topological insulator devices.
Physical Review X | 2015
Yanfei Zhao; Haiwen Liu; Chenglong Zhang; Huichao Wang; Junfeng Wang; Ziquan Lin; Ying Xing; Hong Lu; Jun Liu; Yong Wang; Scott M. Brombosz; Zhili Xiao; Shuang Jia; X. C. Xie; Jian Wang
Analyzing changes in resistivity is one component of condensed-matter physics research that has applications in the electronics industry. Now, researchers experimentally show that the resistivity of a Cd
Physical Review Letters | 2015
H. Zhang; Yi Sun; Wei Li; J. Peng; Can-Li Song; Ying Xing; Qinghua Zhang; Jiaqi Guan; Zhi Li; Yanfei Zhao; Shuai-Hua Ji; Lili Wang; Ke He; Xi Chen; Lin Gu; Langsheng Ling; Mingliang Tian; L. Li; X. C. Xie; Jianping Liu; Hui Yang; Qi-Kun Xue; Jian Wang; Xucun Ma
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Frontiers of Physics in China | 2013
Ying Xing; Yi Sun; Meenakshi Singh; Yanfei Zhao; Moses H. W. Chan; Jian Wang
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Skin Research and Technology | 2015
Ziqiang Sun; Yanru Wang; Shuai Ji; Kaile Wang; Yanfei Zhao
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