Yang Genqing

Formation of nanocrystalline TiN film by ion-beam-enhanced deposition

Abstract Nanocrystalline TiN thin films have been synthesized by ion-beam-enhanced deposition at room temperature. The effects of the ion species, energies and partial pressure of N 2 in the sample chamber on the grain size, lattice parameter and preferred orientation of the films were investigated. The formation of a nanocrystalline structure is attributed to the effect of local recrystallization in a collision cascade volume generated by incident ions.

Stress behavior of TIN films formed by reactive ion-beam-assisted deposition

Abstract The effect of ion species and ion energy on the intrinsic stress in TiN films formed by reactive ion-beam-assisted deposition has been examined. The result shows that the stress changes from tensile to compressive and increases in magnitude with increasing ionic mass and ion energy. This stress annealing is considered to be momentum controlled.

EFFECT OF MG SEGREGATION AT GRAIN-BOUNDARIES ON CORROSION BEHAVIOR OF INTERMETALLIC COMPOUND NI3AL(B)

Abstract 120 keV Mg ions to a dose of 1 × 10 16 ions/cm 2 were implanted into the intermetallic compound Ni 3 Al(0.1B). The corrosion behavior was characterized by multisweep cyclic voltammetry and optical microscopy. The results showed that Mg ion implantation is very effective to improve the corrosion resistance of the specimen in a solution of 1N H 2 SO 4 . Experimental measurements and computer simulation were carried out for study of segregation behavior of Mg atoms at the grain boundaries. It leads to an improved understanding of the mechanism of beneficial effect of Mg ion implantation on corrosion behavior.

Performance comparison of radiation-hardened layout techniques

Total ionizing dose (TID) effect and single event effect (SEE) from space may cause serious effects on bulk silicon and silicon on insulator (SOI) devices, so designers must pay much attention to these bad effects to achieve better performance. This paper presents different radiation-hardened layout techniques to mitigate TID and SEE effect on bulk silicon and SOI device and their corresponding advantages and disadvantages are studied in detail. Under 0.13 μm bulk silicon and SOI process technology, performance comparisons of two different kinds of DFF circuit are made, of which one kind is only hardened in layout (protection ring for bulk silicon DFF, T-gate for SOI DFF), while the other kind is also hardened in schematic such as DICE structure. The result shows that static power and leakage of SOI DFF is lower than that of bulk silicon DFF, while SOI DFF with T-gate is a little slower than bulk silicon DFF with protection ring, which will provide useful guidance for radiation-hardened circuit and layout design.

Porous Structures and Short-Wavelength Photoluminescence of C+-Implanted SiO2 Films

C ions of three different energies were sequentially implanted into SiO2 films grown by plasma enhanced chemical vapor deposition. Microstructures of the samples were studied with transmission electron microscopy (TEM) and secondary ion mass spectroscopy. As revealed by cross-sectional TEM, porous structures had been created in the implanted region during ion implantation. No photoluminescence (PL) was detected from the as-implanted samples. However, intense short-wavelength PL peaking at 360-370 nm and similar 450 nm was observed from the annealed samples. The blue light from samples excited by an Xe lamp can be observed by naked eyes at room temperature. The light emission mechanisms are briefly discussed.

ION BEAM RESEARCH IN CHINA

Abstract The main progress on ion beam research in China is briefly reviewed. Results of film synthesis and the surface modification by ion beam technique on semiconductors, metals, polymers and ceramics are reported. In addition, industrial application in non-semiconductor area is discussed.