Yang Jianqun

Incident particle range dependence of radiation damage in a power bipolar junction transistor

The characteristic degradations in silicon NPN bipolar junction transistors (BJTs) of type 3DD155 are examined under the irradiations of 25-MeV carbon (C), 40-MeV silicon (Si), and 40-MeV chlorine (Cl) ions respectively. Different electrical parameters are measured in-situ during the exposure of heavy ions. The experimental data shows that the changes in the reciprocal of the gain variation (Δ(1/β)) of 3DD155 transistors irradiated respectively by 25-MeV C, 40-MeV Si, and 40-MeV Cl ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence. The Δ(1/β) of 3DD155 BJT irradiated by 25-MeV C ions is greatest at a given fluence, a little smaller when the device is irradiated by 40-MeV Si ions, and smallest in the case of the 40-MeV Cl ions irradiation. The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.

Electron irradiation-induced change of structure and damage mechanisms in multi-walled carbon nanotubes*

Owing to their unique structure and excellent electrical property, carbon nanotubes (CNTs) as an ideal candidate for making future electronic components have great application potentiality. In order to meet the requirements for space application in electronic components, it is necessary to study structural changes and damage mechanisms of multi-walled carbon nanotubes (MWCNTs), caused by the irradiations of 70 and 110 keV electrons. In the paper, the changes of structure and damage mechanisms in the irradiated MWCNTs, induced by the irradiations of 70 and 110 keV electrons, are investigated. The changes in surface morphology and structure of the irradiated MWCNT film are characterized using scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, x-ray diffraction analysis (XRD), and electron paramagnetic resonance (EPR) spectroscopy. It is found that the MWCNTs show different behaviors in structural changes after 70 and 110 keV electron irradiation due to different damage mechanisms. SEM results reveal that the irradiation of 70 keV electrons does not change surface morphology of the MWCNT film, while the irradiation of 110 keV electrons with a high fluence of 5 × 1015 cm−2 leads to evident morphological changes, such as the formation of a rough surface, the entanglement of nanotubes and the shrinkage of nanotubes. Based on Raman spectroscopy, XPS, and XRD analyses, it is confirmed that the irradiation of 70 keV electrons increases the interlayer spacing of the MWCNTs and disorders their structure through electronic excitations and ionization effects, while the irradiation of 110 keV electrons obviously reduces the interlayer spacing of the MWCNTs and improves their graphitic order through knock-on atom displacements. The improvement of the irradiated MWCNTs by 110 keV electrons is attributed to the restructuring of defect sites induced by knock-on atom displacements. EPR spectroscopic analyses reveal that the MWCNTs exposed to both 70 keV electrons and 110 keV electrons suffer ionization damage to some extent.

Wear Behavior of Plasma-Nitrided 2Cr13 Martensitic Stainless Steel under Air and Vacuum

The wear behaviour of the plasma-nitrided 2Cr13 steel disks under air and vacuum have been investigated using a pin-on-disk type tribometer with dry sliding condition. The unnitrided pins of the same material were used for the wear couples. Microhardness measurements, X-ray diffraction analysis, optical microscopy were used to examine the microhardness profile, the surface phases crystal structure and morphology of the specimens. After wear testing, the scanning electron microscopy of the wear tracks on the disk and pin specimens was performed to reveal the wear mechanism. The surface profile of wear tracks of the disk specimens was examined by a profilometer.