Yang Zhi-Jian

Improvement of Properties of p-GaN by Mg Delta Doping

The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition. The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.

A mathematical model of soil moisture spatial distribution on the hill slopes of the Loess Plateau

Based on important factors that affect soil moisture spatial distribution, such as the slope gradients, land use, vegetation cover, and surface water diffusion characteristics together with field measurements of soil moisture data obtained from the surface soil under different land use structures, a soil moisture spatial distribution model was established. The diffusion degree coefficient of surface water for different vegetations was estimated from soil moisture values obtained from field measurements. The model can be solved using the finite unit method. The soil moisture spatial distribution on the hill slopes in the Loess Plateau were simulated by the model. A comparison of the simulated values with measurement data shows that the model is a good fit.Based on important factors that affect soil moisture spatial distribution, such as the slope gradients, land use, vegetation cover, and surface water diffusion characteristics together with field measurements of soil moisture data obtained from the surface soil under different land use structures, a soil moisture spatial distribution model was established. The diffusion degree coefficient of surface water for different vegetations was estimated from soil moisture values obtained from field measurements. The model can be solved using the finite unit method. The soil moisture spatial distribution on the hill slopes in the Loess Plateau were simulated by the model. A comparison of the simulated values with measurement data shows that the model is a good fit.

Room-Temperature Ferromagnetism of Ga1−xMnxN Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

Epitaxial films of Ga1−xMnxN have been grown on c-sapphire substrates by low-pressure metal-organic vapour phase epitaxy. The samples show ferromagnetic behaviour up to a temperature of T = 380 K with hysteresis curves showing a coercivity of 50–100 Oe. No ferromagnetic second phases and no significant deterioration in crystal quality with the incorporation of Mn can be detected by high-resolution x-ray diffraction. The result of x-ray absorption near-edge structures indicates that Mn atoms substitute for Ga atoms. The Mn concentrations of the layers are determined to reach x = 0.038 by proton-induced x-ray emission.

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

We report on the growth and fabrication of deep ultraviolet (DUV) light emitting diodes (LEDs) on an AlN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317 nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films

Non-polar a-plane (110) GaN films have been grown on r-plane (102) sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning electron microscopy, cathodoluminescence and high-resolution x-ray diffraction measurements. The anisotropy of a-plane GaN films may result from the different migration length of adatoms along two in-plane directions. V/III ratio has an effect on the growth rates of different facets and crystal quality. The stripe feature morphology was obviously observed in the film with a high V/III ratio because of the slow growth rate along the [100] direction. When the V/III ratio increased from 1000 to 6000, the in-plane crystal quality anisotropy was decreased due to the weakened predominance in migration length of gallium adatoms.

Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 500°C. The increment of electron concentration from room temperature to 500°C is found to vary largely for different samples. The dispersion of temperature dependence of electron concentration is found to be directly proportional to the density of dislocations in GaN layers calculated by fitting the FWHM of the rocking curves in x-ray diffraction measurements (XRD). The buildup levels in persistent photoconductivity (PPC) are also shown to be directly proportional to the density of dislocations. The correlation of XRD, Hall and PPC results indicate that the high temperature dependence of electron density in unintentional doped GaN is directly dislocation related.

Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

Al0.2Ga0.8N/GaN samples are grown by metalorganic chemical vapour deposition (MOCVD) method on (0001) sapphire substrates. A 10 nm-thick Ni layer is deposited on AlGaN as the transparent Schottky contact. The effect of postannealing in oxygen ambient on the electrical properties of Ni/AlGaN is studied by current–voltage–temperature (I–V–T) measurement. The annealing at a relatively low temperature of 300°C for 90 s results in a decrease of the ideality factor from 2.03 to 1.30 and an increase of the Schottky barrier height from 0.77 eV to 0.954 eV. The I–V–T analysis confirms the improvement originated from the formation of NiO, a layer with higher resistance, which could passivate the surface states of AlGaN and suppress the tunnelling current. Furthermore, the annealing also leads to an increase of the transmittance of the contacts from 57.5% to 78.2%, which would be favourable for AlGaN-based photodetectors.

Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on VGa related defects are observed from photoluminescence measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different (n-type GaN and p-type GaN) templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.

Scattering behaviour of a two-dimensional electron gas induced by Al composition fluctuation in AlxGa1 − xN barriers in AlxGa1−xN/GaN heterostructures

This paper reports that cathodoluminescence (CL) measurements have been done to study the alloy fluctuation of the Al0.3Ga0.7N layer in Al0.3Ga0.7N/GaN heterostructures. The CL images and linescanning results demonstrate the existence of compositional fluctuation of Al in the Al0.3Ga0.7N barrier. A model using a δ-shape perturbation Hamilton function has been proposed to simulate the scattering probability of the two dimensional electron gases (2DEG) induced by Al composition fluctuation. Two factors, including conduction band fluctuation and polarization electric field variation, induced by the Al composition fluctuation have been taken into account. The scattering relaxation time induced by both factors has been estimated to be 0.31 ns and 0.0078 ns, respectively, indicating that the variation of the piezoelectric field is dominant in the scattering of the 2DEG induced by Al fluctuation.

Dopant Effects on Defects in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

The effects of dopants on the defects of GaN films were investigated by using different methods, such as wet, etching of pits, x-ray diffraction and photoluminescence (PL). Three kinds of the samples were prepared with different dopants, that is, nominally undoped, Si-doped and Mg-doped GaN films. It was found that the lowest density of the, etched pit was existed in the nominally undoped GaN, while the highest in the Mg-doped sample. The effects of the dopants on the, etching pits were discussed.