Yanwu Xie

Titaniumdxy ferromagnetism at the LaAlO3/SrTiO3 interface

A number of recent transport and magnetization studies have shown signs of ferromagnetism in the LaAlO3/SrTiO3 heterostructure, an unexpected property with no bulk analogue in the constituent materials. However, no experiment thus far has provided direct information on the host of the magnetism. Here we report spectroscopic investigations of the magnetism using element-specific techniques, including X-ray magnetic circular dichroism and X-ray absorption spectroscopy, along with corresponding model calculations. We find direct evidence for in-plane ferromagnetic order at the interface, with Ti(3+) character in the dxy orbital of the anisotropic t2g band. These findings establish a striking example of emergent phenomena at oxide interfaces.

Control of electronic conduction at an oxide heterointerface using surface polar adsorbates

The interface between LaAlO(3) and SrTiO(3) possesses a range of intriguing properties, notably a proposed connection between the surface state of the LaAlO(3) and the conductivity buried in the SrTiO(3). Here we study the effect of the surface adsorption of a variety of common laboratory solvents on the conductivity at the interface between LaAlO(3) and SrTiO(3). We show that the application of chemicals such as acetone, ethanol, and water can induce a large change in the conductivity, and, in particular, an insulator to metal transition around the critical LaAlO(3) thickness. This phenomenon is observed only for polar solvents. These data provide experimental evidence for a general polarization-facilitated electronic transfer mechanism.

Charge Writing at the LaAlO3/SrTiO3 Surface

Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO(3)/SrTiO(3) interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge. These charges are stably deposited on a wide range of LaAlO(3) thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO(3), providing experimental evidence for a theoretically predicted built-in potential.

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO3/SrTiO3 heterointerfaces.

The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO3 and TiO2-terminated SrTiO3 (STO; refs 1, 2). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed on thermal cycling above the STO cubic-to-tetragonal structural transition temperature, implying that the local conductivity is strongly modified by the STO tetragonal domain structure. The interplay between substrate domains and the interface provides an additional mechanism for understanding and controlling the behaviour of heterostructures.

Enhancing Electron Mobility at the LaAlO3/SrTiO3 Interface by Surface Control

Mobility of electrons confined at the LaAlO₃ /SrTiO₃ interface is significantly enhanced by surface control using surface charges and adsorbates, reaching a low temperature value more than 20 000 cm(2) V(-1) s(-1) . A uniform trend that mobility increases with decreasing sheet carrier density is observed.

Scanning probe manipulation of magnetism at the LaAlO3/SrTiO3 heterointerface.

Manipulation of magnetism is a longstanding goal of research in exotic materials. In this work, we demonstrate that the small ferromagnetic patches in LaAlO(3)/SrTiO(3) heterostructures can be dramatically changed by in situ contact of a scanning probe. Our results provide a platform for manipulation of small magnets through either a strong magneto-elastic coupling or sensitivity to surface modification. The ability to locally control magnetism is particularly interesting due to the presence of superconductivity with strong spin-orbit coupling in LaAlO(3)/SrTiO(3).

Large-Scale Production of Graphene Nanoribbons from Electrospun Polymers

Graphene nanoribbons (GNRs) are promising building blocks for high-performance electronics due to their high electron mobility and dimensionality-induced bandgap. Despite many past efforts, direct synthesis of GNRs with controlled dimensions and scalability remains challenging. Here we report the scalable synthesis of GNRs using electrospun polymer nanofiber templates. Palladium-incorporated poly(4-vinylphenol) nanofibers were prepared by electrospinning with controlled diameter and orientation. Highly graphitized GNRs as narrow as 10 nm were then synthesized from these templates by chemical vapor deposition. A transport gap can be observed in 30 nm-wide GNRs, enabling them to function as field-effect transistors at room temperature. Our results represent the first success on the scalable synthesis of highly graphitized GNRs from polymer templates. Furthermore, the generality of this method allows various polymers to be explored, which will lead to understanding of growth mechanism and rational control over crystallinity, feature size and bandgap to enable a new pathway for graphene electronics.

Anisotropic Transport at the LaAlO3/SrTiO3 Interface Explained by Microscopic Imaging of Channel-Flow over SrTiO3 Domains.

Oxide interfaces, including the LaAlO3/SrTiO3 interface, have been a subject of intense interest for over a decade due to their rich physics and potential as low-dimensional nanoelectronic systems. The field has reached the stage where efforts are invested in developing devices. It is critical now to understand the functionalities and limitations of such devices. Recent scanning probe measurements of the LaAlO3/SrTiO3 interface have revealed locally enhanced current flow and accumulation of charge along channels related to SrTiO3 structural domains. These observations raised a key question regarding the role these modulations play in the macroscopic properties of devices. Here we show that the microscopic picture, mapped by scanning superconducting quantum interference device, accounts for a substantial part of the macroscopically measured transport anisotropy. We compared local flux data with transport values, measured simultaneously, over various SrTiO3 domain configurations. We show a clear relation between maps of local current density over specific domain configurations and the measured anisotropy for the same device. The domains divert the direction of current flow, resulting in a direction-dependent resistance. We also show that the modulation can be significant and that in some cases up to 95% of the current is modulated over the channels. The orientation and distribution of the SrTiO3 structural domains change between different cooldowns of the same device or when electric fields are applied, affecting the device behavior. Our results, highlight the importance of substrate physics, and in particular, the role of structural domains, in controlling electronic properties of LaAlO3/SrTiO3 devices. Furthermore, these results point to new research directions, exploiting the STO domains’ ability to divert or even carry current.

Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System.

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. In order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. Here, by utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO3/SrTiO3 heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson-Schrödinger sub-band model. In particular, the large nonlinear dielectric response of SrTiO3 enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. Our study provides a broad framework for understanding various reported phenomena at the LaAlO3/SrTiO3 interface.

Imaging and tuning polarity at SrTiO3 domain walls

Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO3/SrTiO3 interface 2DEG at the nanoscale. In particular, SrTiO3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO3 twin boundary and detect a change in LaAlO3/SrTiO3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO3-based devices on the nanoscale.