Yanzhang Ma

Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement

A multilayer microcircuit on a diamond surface has been developed for high-pressure resistivity measurement in a diamond anvil cell (DAC). Using a film deposition technique, a layer of Mo film was deposited on a diamond anvil as a conductor, topped with a layer of alumina film for insulation. A microelectric circuit was fabricated with a photolithographic shaping method after film encapsulation. With precise control and measurements of all the dimensions of the sample for resistance measurement, including the width of the metallic film and the diameter and thickness of the gasket hole, resistivity of a sample can be accurately determined. This microcircuit can be flexibly fabricated and easily cleaned. It also provides a promising prospect to measure resistivity under in situ high pressure and high temperature. We measured the resistivity of ZnS using this method, and proved the pressure induced phase transition at 13.9–17.9GPa to be a semiconductor to semiconductor transformation.A multilayer microcircuit on a diamond surface has been developed for high-pressure resistivity measurement in a diamond anvil cell (DAC). Using a film deposition technique, a layer of Mo film was deposited on a diamond anvil as a conductor, topped with a layer of alumina film for insulation. A microelectric circuit was fabricated with a photolithographic shaping method after film encapsulation. With precise control and measurements of all the dimensions of the sample for resistance measurement, including the width of the metallic film and the diameter and thickness of the gasket hole, resistivity of a sample can be accurately determined. This microcircuit can be flexibly fabricated and easily cleaned. It also provides a promising prospect to measure resistivity under in situ high pressure and high temperature. We measured the resistivity of ZnS using this method, and proved the pressure induced phase transition at 13.9–17.9GPa to be a semiconductor to semiconductor transformation.

Shear-induced phase transition of nanocrystalline hexagonal boron nitride to wurtzitic structure at room temperature and lower pressure

Disordered structures of boron nitride (BN), graphite, boron carbide (BC), and boron carbon nitride (BCN) systems are considered important precursor materials for synthesis of superhard phases in these systems. However, phase transformation of such materials can be achieved only at extreme pressure–temperature conditions, which is irrelevant to industrial applications. Here, the phase transition from disordered nanocrystalline hexagonal (h)BN to superhard wurtzitic (w)BN was found at room temperature under a pressure of 6.7 GPa after applying large plastic shear in a rotational diamond anvil cell (RDAC) monitored by in situ synchrotron X-ray diffraction (XRD) measurements. However, under hydrostatic compression to 52.8 GPa, the same hBN sample did not transform to wBN but probably underwent a reversible transformation to a high-pressure disordered phase with closed-packed buckled layers. The current phase-transition pressure is the lowest among all reported direct-phase transitions from hBN to wBN at room temperature. Usually, large plastic straining leads to disordering and amorphization; here, in contrast, highly disordered hBN transformed to crystalline wBN. The mechanisms of strain-induced phase transformation and the reasons for such a low transformation pressure are discussed. Our results demonstrate a potential of low pressure–room temperature synthesis of superhard materials under plastic shear from disordered or amorphous precursors. They also open a pathway of phase transformation of nanocrystalline materials and materials with disordered and amorphous structures under extensive shear.

Accurate measurements of high pressure resistivity in a diamond anvil cell

A new technique incorporating a diamond anvil cell with photolithographic and film deposition techniques has been developed for electrical resistivity measurement under high pressure. Molybdenum was sputtered onto a diamond anvil facet and patterned to the desired microcircuit. A sputtered Al2O3 (alumina) layer was then fabricated onto the Mo-coated layer to insulate the thin-film electrodes from the metallic gasket and to protect the electrodes against plastic deformation under high pressure conditions. For better insulation, Al2O3 was also sputtered onto the metallic gasket. The regular shape of the microcircuit makes it convenient to perform an electric current field analysis, hence, accurate resistivity data can be obtained from the measurement. We performed the measurement of nanocrystalline ZnS to 36 GPa and determined its reversibility and phase transition hysteresis.

Thickness measurement of sample in diamond anvil cell

We report on an original method that measures sample thickness in a diamond anvil cell under high pressures. The method is based on two hypotheses: completely plastic deformation on the gasket and completely elastic deformation of the diamonds. This method can further eliminate the effect of diamond deformation on the thickness measurement of a sample, which permits us to measure the thickness of alumina up to 41.4 GPa.

Electronic topological transition and semiconductor-to-metal conversion of Bi2Te3 under high pressure

Accurate high pressure in situ Hall-effect and temperature dependent electrical resistivity measurements have been carried out on Bi2Te3, a topological insulator. The pressure dependent electrical resistivity, Hall coefficient, carrier concentration, and mobility show the abnormal inflection points at 8, 12, and 17.8 GPa, indicating that the pressure-induced structural phase transitions of Bi2Te3 can result in a series of changes in the carrier transport behavior. In addition, the Hall coefficient shows a significant discontinuous change at 4 GPa, which is caused by the electronic topological transition. A sign inversion of Hall coefficient from positive to negative is found around 8 GPa. Furthermore, the temperature dependent electrical resistivity shows that the sample undergoes a semiconductor-to-metal conversion around 9.2 GPa, indicating that the insulating gap of Bi2Te3 becomes closed at this pressure. As the metallization occurs in the sample, the topological property of Bi2Te3 disappears.

Pressure-induced phase transition in potassium azide up to 55 GPa

Potassium azide was investigated by Raman scattering spectroscopy up to a pressure of 55.0 GPa by use of diamond anvil cell at room temperature. A pressure-induced reversible phase transition was revealed. The onset of the phase transition was characterized by the hardening of a previously soft lattice mode at 13.6 GPa. This transition is considered a structural phase transition. Compression induces a symmetry reduction, which is indicated by the splitting of the librational modes, the development of infrared active vibrational modes, and the appearance of other new modes in the external mode region. The new high-pressure phase, with azide ions still in a molecular state, can be preserved down to 1.2 GPa. The Gruneisen parameters for the parent phase were calculated.

Phase transition and structure of silver azide at high pressure

Silver azide (AgN3) was compressed up to 51.3 GPa. The results reveal a reversible second-order orthorhombic-to-tetragonal phase transformation starting from ambient pressure and completing at 2.7 GPa. The phase transition is accompanied by a proximity of cell parameters a and b, a 3° rotation of azide anions, and a change of coordination number from 4-4 (four short, four long) to eight fold. The crystal structure of the high pressure phase is determined to be in I4/mcm space group, with Ag at 4a, N1 at 4d, and N2 at 8h Wyckoff positions. Both of the two phases have anisotropic compressibility: the orthorhombic phase exhibits an anomalous expansion under compression along a-axis and is more compressive along b-axis than c-axis; the tetragonal phase is more compressive along the interlayer direction than the intralayer directions. The bulk moduli of the orthorhombic and tetragonal phases are determined to be KOT = 39 ± 5 GPa with KOT’ = 10 ± 7 and KOT = 57 ± 2 GPa with KOT’ = 6.6 ± 0.2, respectively.

In situ electrical conductivity measurement of high-pressure molten (Mg0.875,Fe0.125)2SiO4

In situ resistance measurement of mantle mineral under high temperature and pressure has been considered an important method for studying the electrical properties and thermal states of Earth’s interior. Here the authors report the results of the electrical conductivity of molten olivine [(Mg0.875,Fe0.125)2SiO4] on diamond anvil cell with pressure at 13.2GPa and temperature at 3720K. The results indicate that the activation enthalpy of molten olivine is much less than that of solid, and its conductivity is relatively insensitive to temperature. Moreover, at the given temperature range the conductivity of molten olivine exhibits Arrhenius behavior perfectly. Compared to the results of Hawaiian tholeiite provided by Tyburczy and Waff [J. Geophys. Res. 88, 1413 (1983)] at lower pressure and temperature, the pressure effect on molten olivine conductivity is slightly weaker. This method for electrical conductivity measurement on laser-heated diamond anvil cell allows the environment simulation study of unresea...

In situ electrical impedance spectroscopy under high pressure on diamond anvil cell

The effect of grain boundary on electrical transportation properties is a basic physical problem and also a subject of material science and technology. In situ electrical measurement of powdered materials under high pressure provides a chance to figure out the electrical properties of grain boundaries. In this letter, the authors report an in situ impedance spectroscopy method used in conjunction with a diamond anvil cell for electrical property research of grain boundaries under high pressure. Powdered CdS was pressed up to 23GPa and an impedance arc corresponding to the grain boundary was detected. It was found that the electrical property of the grain boundary changed with pressure and could be determined by the resistance and the relaxation frequency. Pressure decreases the effective scattering section of the grain boundary to charge carriers, and finally leads to the decrease of resistance and activation energy of the grain boundary.

New diamond anvil cell system for in situ resistance measurement under extreme conditions

We report an alumina-encapsulated microcircuit on a diamond anvil for high-pressure and high-temperature electrical conductivity measurement. An alumina thin film was deposited on a diamond anvil as a thermal insulation layer for laser heating, on which a molybdenum film was deposited and photolithographically fabricated to a van der Pauw circuit. The introduction of the alumina layer significantly improves the laser heating performance. This specially fabricated diamond anvil permits us to measure the resistivity of (Mg0.875Fe0.125)2SiO4 at 3450K and 35GPa in a laser-heated diamond anvil cell. We expect to substantially extend the pressure-temperature scale of in situ resistivity measurement.