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Dive into the research topics where Yaping Zang is active.

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Featured researches published by Yaping Zang.


Materials horizons | 2015

Advances of flexible pressure sensors toward artificial intelligence and health care applications

Yaping Zang; Fengjiao Zhang; Chong-an Di; Daoben Zhu

By virtue of their wide applications in personal electronic devices and industrial monitoring, pressure sensors are attractive candidates for promoting the advancement of science and technology in modern society. Flexible pressure sensors based on organic materials, which combine unique advantages of flexibility and low-cost, have emerged as a highly active field due to their promising applications in artificial intelligence systems and wearable health care devices. In this review, we focus on the fundamentals of flexible pressure sensors, and subsequently on several critical concepts for the exploration of functional materials and optimization of sensing devices toward practical applications. Perspectives on self-powered, transparent and implantable pressure sensing devices are also examined to highlight the development directions in this exciting research field.


Nature Communications | 2015

Flexible suspended gate organic thin-film transistors for ultra-sensitive pressure detection

Yaping Zang; Fengjiao Zhang; Dazhen Huang; Xike Gao; Chong-an Di; Daoben Zhu

The utilization of organic devices as pressure-sensing elements in artificial intelligence and healthcare applications represents a fascinating opportunity for the next-generation electronic products. To satisfy the critical requirements of these promising applications, the low-cost construction of large-area ultra-sensitive organic pressure devices with outstanding flexibility is highly desired. Here we present flexible suspended gate organic thin-film transistors (SGOTFTs) as a model platform that enables ultra-sensitive pressure detection. More importantly, the unique device geometry of SGOTFTs allows the fine-tuning of their sensitivity by the suspended gate. An unprecedented sensitivity of 192 kPa−1, a low limit-of-detection pressure of <0.5 Pa and a short response time of 10 ms were successfully realized, allowing the real-time detection of acoustic waves. These excellent sensing properties of SGOTFTs, together with their advantages of facile large-area fabrication and versatility in detecting various pressure signals, make SGOTFTs a powerful strategy for spatial pressure mapping in practical applications.


Nature Communications | 2015

Flexible and self-powered temperature–pressure dual-parameter sensors using microstructure-frame-supported organic thermoelectric materials

Fengjiao Zhang; Yaping Zang; Dazhen Huang; Chong-an Di; Daoben Zhu

Skin-like temperature- and pressure-sensing capabilities are essential features for the next generation of artificial intelligent products. Previous studies of e-skin and smart elements have focused on flexible pressure sensors, whereas the simultaneous and sensitive detection of temperature and pressure with a single device remains a challenge. Here we report developing flexible dual-parameter temperature–pressure sensors based on microstructure-frame-supported organic thermoelectric (MFSOTE) materials. The effective transduction of temperature and pressure stimuli into two independent electrical signals permits the instantaneous sensing of temperature and pressure with an accurate temperature resolution of <0.1 K and a high-pressure-sensing sensitivity of up to 28.9 kPa−1. More importantly, these dual-parameter sensors can be self-powered with outstanding sensing performance. The excellent sensing properties of MFSOTE-based devices, together with their unique advantages of low cost and large-area fabrication, make MFSOTE materials possess promising applications in e-skin and health-monitoring elements.


Journal of the American Chemical Society | 2014

Two-Dimensional π-Expanded Quinoidal Terthiophenes Terminated with Dicyanomethylenes as n-Type Semiconductors for High-Performance Organic Thin-Film Transistors

Cheng Zhang; Yaping Zang; Eliot Gann; Christopher R. McNeill; Xiaozhang Zhu; Chong-an Di; Daoben Zhu

Quinoidal oligothiophenes (QOT), as classical n-type semiconductors, have been well-known for a long time but with non-optimal semiconducting properties. We report here the design and selective synthesis of new two-dimensional (2D) π-expanded quinoidal terthiophenes, 2DQTTs, with proximal (2DQTT-i) and distal (2DQTT-o) regiochemistry for high-performance n-channel organic thin-film transistors (n-OTFTs) featuring high electron mobility, solution processability, and ambient stability. The elegant combination of thieno[3,4-b]thiophene [TT, donor (D)] and 5-alkyl-4H-thieno[3,4-c]pyrrole-4,6(5H)-dione [TPD, acceptor (A)] units with relatively large π-surface endows these 2DQTTs with distinctive 2D structural characteristics and flat configuration stabilized by weak intramolecular S-O/S weak interactions. Furthermore, the A-D-A-D-A electronic structure maintains an adequately low LUMO energy level. These 2DQTTs are shown to exhibit outstanding semiconducting properties with electron mobilities of up to 3.0 cm(2) V(-1) s(-1) and on/off ratios of up to 10(6) (2DQTT-o) in ambient- and solution-processed OTFTs. Investigations on thin-film morphology reveal that the microstructure of 2DQTTs is highly dependent on the orientation of the fused thiophene subunits, leading to differences in electron mobilities of 1 order of magnitude. X-ray diffraction studies in particular reveal increased crystallinity, crystalline coherence, and orientational order in 2DQTT-o compared to 2DQTT-i, which accounts for the superior electron transport property of 2DQTT-o.


Advanced Materials | 2016

Device Engineered Organic Transistors for Flexible Sensing Applications

Yaping Zang; Dazhen Huang; Chong-an Di; Daoben Zhu

Organic thin-film transistors (OFETs) represent a promising candidate for next-generation sensing applications because of the intrinsic advantages of organic semiconductors. The development of flexible sensing devices has received particular interest in the past few years. The recent efforts of developing OFETs for sensitive and specific flexible sensors are summarized from the standpoint of device engineering. The tuning of signal transduction and signal amplification are highlighted based on an overview of active-layer thickness modulation, functional receptor implantation and device geometry optimization.


Advanced Materials | 2014

Specific and Reproducible Gas Sensors Utilizing Gas‐Phase Chemical Reaction on Organic Transistors

Yaping Zang; Fengjiao Zhang; Dazhen Huang; Chong-an Di; Qing Meng; Xike Gao; Daoben Zhu

Utilizing a textbook reaction on the surface of an organic active channel, achieves sensitive detection of HCl, NH3 and NO2, with good selectivity, excellent reproducibility, and satisfactory stability. These results reveal gas-phase reaction assisted detection as a unique and promising approach to construct practical applicable gas sensors with typical organic transistors.


Journal of Materials Chemistry C | 2014

Solution-sheared ultrathin films for highly-sensitive ammonia detection using organic thin-film transistors

Qing Meng; Fengjiao Zhang; Yaping Zang; Dazhen Huang; Ye Zou; Jie Liu; Guangyao Zhao; Z. H. Wang; Deyang Ji; Chong-an Di; Wenping Hu; Daoben Zhu

The solution-shearing technique is utilized to fabricate large-area, ultrathin and continuous films of 1,4-bis((5′-hexyl-2,2′-bithiophen-5-yl)ethynyl)benzene (HTEB) for high-performance organic thin-film transistors (OTFTs), based on which highly sensitive, highly selective and reversible gas sensors exhibit outstanding response to NH3, with detection limit as low as 100 ppb.


Angewandte Chemie | 2016

Bismuth Interfacial Doping of Organic Small Molecules for High Performance n‐type Thermoelectric Materials

Dazhen Huang; Chao Wang; Ye Zou; Xingxing Shen; Yaping Zang; Hongguang Shen; Xike Gao; Yuanping Yi; Wei Xu; Chong-an Di; Daoben Zhu

Development of chemically doped high performance n-type organic thermoelectric (TE) materials is of vital importance for flexible power generating applications. For the first time, bismuth (Bi) n-type chemical doping of organic semiconductors is described, enabling high performance TE materials. The Bi interfacial doping of thiophene-diketopyrrolopyrrole-based quinoidal (TDPPQ) molecules endows the film with a balanced electrical conductivity of 3.3 S cm(-1) and a Seebeck coefficient of 585 μV K(-1) . The newly developed TE material possesses a maximum power factor of 113 μW m(-1)  K(-2) , which is at the forefront for organic small molecule-based n-type TE materials. These studies reveal that fine-tuning of the heavy metal doping of organic semiconductors opens up a new strategy for exploring high performance organic TE materials.


Advanced Materials | 2017

A Dual‐Organic‐Transistor‐Based Tactile‐Perception System with Signal‐Processing Functionality

Yaping Zang; Hongguang Shen; Dazhen Huang; Chong-an Di; Daoben Zhu

Organic-device-based tactile-perception systems can open up new opportunities for the next generation of intelligent products. To meet the critical requirements of artificial perception systems, the efficient construction of organic smart elements with integrated sensing and signal processing functionalities is highly desired, but remains a challenge. This study presents a dual-organic-transistor-based tactile-perception element (DOT-TPE) with biomimetic functionality by the construction of organic synaptic transistors with integrated sensing transistors. The unique geometry of the DOT-TPE permits instantaneous sensing of pressure stimuli and synapse-like processing of an electric signal in a single element. More importantly, these organic-transistor-based tactile-perception elements can be built into arrays to serve as bionic tactile-perception systems. The combined biomimetic functionality of tactile-perception systems, together with their promising features of flexibility and large-area fabrication, makes this work represent a step forward toward novel e-skin devices for artificial intelligence.


Advanced Materials | 2015

Sensitive Flexible Magnetic Sensors using Organic Transistors with Magnetic-Functionalized Suspended Gate Electrodes.

Yaping Zang; Fengjiao Zhang; Dazhen Huang; Chong-an Di; Daoben Zhu

Utilizing a magnetic-functionalized suspended gate with combined features of outstanding conductivity, flexibility, and magnetic properties, flexible magnetic sensor based on an organic field-effect transistor (OFET), with a high sensitivity of 115.2% mT(-1) is demonstrated. Gate engineering enables the sensing devices to possess promising applications for flexible touchless switches and spatiallyresolved magnetic-imaging elements.

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Chong-an Di

Chinese Academy of Sciences

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Daoben Zhu

Chinese Academy of Sciences

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Dazhen Huang

Chinese Academy of Sciences

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Ye Zou

Chinese Academy of Sciences

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Wei Xu

Chinese Academy of Sciences

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Xike Gao

Chinese Academy of Sciences

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Cheng Zhang

Chinese Academy of Sciences

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Hongguang Shen

Chinese Academy of Sciences

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Xiaozhang Zhu

Chinese Academy of Sciences

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